Method for the continuous manufacture of thin film solar cells

• US 4,318,938 A
• Filed: 05/29/1979
• Issued: 03/09/1982
• Est. Priority Date: 05/29/1979
• Status: Expired due to Term

• Current Assignee: University of Delaware
• Original Assignee: University of Delaware
• Inventors: Barnett, Allen M., Russell, T. W. Fraser, Baron, Bill N., Masi, James V.
• Primary Examiner(s): Hoffman, James R.
• Application Number:
  US06/043,315
• Time in Patent Office: 1,015 Days
• Field of Search: 427/74, 427/75
• US Class Current: 438/62
• CPC Class Codes: H01L 31/03365 comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
• CPC Class Codes: H01L 31/048 Encapsulation of modules
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H01L 31/1876 Particular processes or apparatus for batch treatment of the devices
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 148/006 Apparatus
• CPC Class Codes: Y10S 148/12 Photocathodes-Cs coated and solar cell

Abstract

A technique for manufacturing durable, reliable solar cells by a continuous process suitable for large-scale manufacture involves, in substance, providing a reel of thin metal foil substrate and forming on the substrate a series of layers operative to form a photovoltaic junction, short prevention blocking layers, contacts and integral encapsulation. The foil substrate is processed as a continuous reel substantially until final testing at which point, if desired, it can be cut into individual cells for deployment. In comparison with a batch process, the continuous technique can reduce manufacturing cost by as much as a factor of two.

Claims

1. A method for the substantially continuous fabrication of thin film solar cells by performing, on a substantially continuously moving, elongated, flexible conductive substrate, the following steps:

(a) depositing a first semiconductor layer on the said conductive substrate with the conductive substrate a first electrical contact;

(b) depositing a second semiconductor layer on said conductive substrate;

(c) forming an electrical junction between said first and said second semiconductor layers; and

(d) applying a second electrical contact to the unit resulting from said conductive substrate and from said first and said second semiconductor.

2. The method of claim 1 wherein the solar cells are rear wall cells and said second semiconductor layer is deposited in electrical contact with said conductive substrate, and then said first semiconductor layer is deposited on said second semiconductor layer.

3. The method of claim 1 wherein the solar cells are front wall cells and said first semiconductor layer is deposited in electrical contact with said conductive substrate, and then said second semiconductor layer is deposited on said first semiconductor layer.

4. The method of claim 3 wherein said first semiconductor layer is made from a cadmium sulfide-type material, including the steps of depositing on said first semiconductor a layer of copper-containing compound, forming said second semiconductor as a copper sulfide semiconductor by heating the structure to effect an ion exchange reaction between said copper-containing compound and said first semiconductor, removing the byproducts of said ion exchange reaction, and forming said junction by heating in a reducing atmosphere.

5. The method of claim 4 wherein said first semiconductor and said copper-containing compound are deposited by vacuum evaporation.

6. The method of claim 4 wherein said copper-containing compound is cuprous chloride.

7. The method of claim 4 wherein said flexible conductive substrate is a material selected from the group consisting of brass and zinc-plated copper and including the additional step of forming a zinc sulfide layer between said substrate and said first semiconductor.

8. The method of claim 4 including the additional step of forming a discontinuous cadmium sulfate layer for preventing unwanted shorts between said first semiconductor and said second electrical contact.

9. The method of claim 4 including the additional step of applying over the second semiconductor a composite integral encapsulating member comprising an inner layer of copper oxide and an outer layer of glass.

10. The method of claim 4 including forming an anti-reflection layer by texturizing said cadmium sulfide by an etching step.

11. The method of claim 10 wherein a further layer is formed on said substrate before said electrical contact is applied thereto.

12. The method of claim 3 wherein said second semiconductor. is a copper sulfide layer applied by a wet process.

13. The method of claim 1 including applying an encapsulating member after the ohmic electrical contact is applied.

14. The method of claim 1 wherein said substrate is conductive by applying an electrical contact thereon to act as said first electrical contact.

15. A method for the substantially continuous fabrication of thin film solar cells by substantially continuously passing an elongated, flexible conductive substrate past a series of treatment stations and performing the following process steps:

(a) depositing a zinc sulfide layer by vacuum evaporation;

(b) depositing a cadmium sulfide-type semiconductor by vacuum evaporation;

(c) depositing a layer of cuprous chloride by vacuum evaporation;

(d) forming a copper sulfide semiconductor by heating the structure to effect an ion exchange reaction between said cadmium sulfide-type semiconductor and said cuprous chloride;

(e) removing the byproducts of said ion exchange reaction;

(f) forming an electrical junction between the semiconductor layers by heating in a reducing atmosphere;

(g) forming a discontinuous cadmium sulfate layer by heating in an oxygen-containing atmosphere;

(h) applying an electrical contact grid to the copper sulfide semiconductor by printing;

(i) depositing a copper oxide layer over the copper sulfide semiconductor by vacuum evaportion; and

(j) depositing a glass layer over the copper oxide layer.