Thermally compensated silicon pressure sensor

• US 4,320,664 A
• Filed: 02/25/1980
• Issued: 03/23/1982
• Est. Priority Date: 02/25/1980
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Rehn, Larry A., Tarpley, Roy W.
• Primary Examiner(s): WOODIEL, DONALD
• Application Number:
  US06/124,417
• Time in Patent Office: 757 Days
• Field of Search: 73/708, 73/721, 73/727, 73/DIG. 4, 73/777, 73/719, 338/4, 338/3, 338/9, 338/42
• US Class Current: 73/708
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm
• CPC Class Codes: G01L 9/065 with temperature compensating means non electric temperature compensating means G01L19/04
• CPC Class Codes: H01L 29/84 controllable by variation of applied mechanical force, e.g. of pressure
• CPC Class Codes: Y10S 73/04 Piezoelectric

Abstract

A semiconductor pressure sensor employing the piezoresistive effect of single crystal silicon resistors to measure the flexure of a semiconductor diaphragm. In the preferred embodiment, a Wheatstone bridge composed of a first pair of resistors disposed on the center of the diaphragm and a second pair of resistors disposed on the periphery of the diaphragm is employed. Due to the nature of the diaphragm flexure, the first and second pairs of resistors exhibit piezoresistivity in opposite directions enabling pressure measurement with greater sensitivity. The diaphragm is mounted on and supported by a silicon clamp ring. The diaphragm and the clamp ring together form a unitary semiconductor structure. Because the piezoresistive effect which serves as a measure of the diaphragm flexure and hence as a measure of the pressure difference across the diaphragm is temperature dependent, the sensor also includes a temperature sensitive resistor, forming a part of the same unitary semiconductor structure, which provides a measure of the temperature of the piezoresistive elements. This measure of temperature enables external circuitry to correct for the temperature dependence of the piezoresistive effect thereby providing a pressure measurement of greater accuracy.

Claims

1. A thermally compensated silicon pressure sensor comprising:

(a) a single crystal of silicon including;

(1) a diaphragm portion with a top surface and a bottom surface, having a thickness permitting flexure when a pressure differential is applied between said top surface and said bottom surface and having a continuous loop resistor element disposed adjacent to said top surface in a position for exhibiting piezoresistivity when said diaphragm is flexed, a first resistor disposed in a central portion of said diaphragm portion, a second resistor connected to said first resistor and disposed in a peripheral portion of said diaphragm portion, a third resistor connected to said second resistor and disposed in a central portion of said diaphragm portion and a fourth resistor connected to said first and third resistors and disposed in a peripheral portion of said diaphragm portion; and

(2) a clamp ring portion disposed around the entire perimeter of said diaphragm portion having a thickness providing mechanical support to said diaphragm portion and permitting virtually no flexure of said clamp ring portion when a pressure differential is applied between said top surface and said bottom surface of said diaphragm portion, and further having a temperature sensitive resistor disposed therein;

(b) a first set of electrical terminals including a first electrical terminal disposed in ohmic contact with said continuous loop resistor element at the connection between said first and second resistors, a second electrical terminal in ohmic contact with said continuous loop resistor element at the connection between said second and third resistors, a third electrical terminal in ohmic contact with said continuous loop resistor element at the connection between said third and fourth resistors and a fourth electrical terminal disposed in ohmic contact with said continuous loop resistor element at the connection between said first and fourth resistors; and

(c) a second set of electrical terminals disposed in ohmic contact with said temperature sensitive resistor. PG,24

2. A thermally compensated silicon pressure sensor as claimed in claim 1, wherein:

said temperature sensitive element comprises a resistor region adjacent to a surface of said clamp ring portion having a conductivity type opposite to the conductivity type of the surrounding clamp ring portion; and

said second set of electrical terminals comprises a fifth electrical terminal and a sixth electrical terminal disposed in ohmic contact with said resistor region.

3. A thermally compensated silicon pressure sensor as claimed in claim 1, wherein:

said second set of electrical terminals comprises a fifth electrical terminal including at least one spreading-resistance thin-film metal contact to said clamp ring portion and a sixth electrical terminal including at least one spreading-resistance thin-film metal contact to said clamp ring portion; and

said temperature sensitive element comprises the bulk resistance of said clamp ring portion between said fifth and sixth electrical terminals.

4. A thermally compensated silicon pressure sensor as claimed in claim 1, further comprising:

a sensor package connected to said clamp ring portion having a first port for applying a first pressure to said top surface of said diaphragm portion and a second port for applying a second pressure to said bottom surface of said diaphragm portion.

5. A thermally compensated silicon pressure sensor as claimed in claim 1, further comprising:

a sensor package connected to said clamp ring portion having a chamber enclosing one of said surfaces of said diaphragm portion at a fixed pressure and a port for applying a pressure to the other of said surfaces of said diaphragm portion.

6. A thermally compensated silicon pressure sensor comprising:

a silicon carbide diaphragm having a top surface and a bottom surface and a thickness permitting flexure when a pressure differential is applied between said top surface and said bottom surface;

at least one doped silicon resistor element disposed on said top surface of said diaphragm in a position for exhibiting piezoresistivity when said diaphragm is flexed;

a polycrystalline silicon clamp ring disposed on the peripheral portion of the bottom surface of said diaphragm around the entire perimeter of said diaphragm having a thickness providing mechanical support to said diaphragm and permitting virtually no flexure of said clamp ring when a pressure differential is applied between said top surface and said bottom surface of said diaphragm; and

a doped silicon temperature sensitive resistor element disposed on the peripheral portion of the top surface of said diaphragm opposite to said clamp ring.

7. A thermally compensated silicon pressure sensor as claimed in claim 6, further comprising:

a first set of electrical terminals disposed on said diaphragm portion in ohmic contact with said at least one resistor element; and

a second set of electrical terminals disposed in ohmic contact with said temperature sensitive resistor element.

8. A thermally compensated silicon pressure sensor as claimed in claim 7, wherein:

said at least one resistor element comprises a continuous loop resistor element having a first resistor disposed on a central portion of said diaphragm, a second resistor connected to said first resistor and disposed on a peripheral portion of said diaphragm, a third resistor connected to said second resistor and disposed on a central portion of said diaphragm and a fourth resistor connected to said first and third resistors and disposed on a peripheral portion of said diaphragm; and

said first set of electrical terminals comprises a first electrical terminal disposed in ohmic contact with said continuous loop resistor element at the connection between said first and second resistors, a second electrical terminal disposed in ohmic contact with said continuous loop resistor element at the connection between said second and third resistors, a third electrical terminal disposed in ohmic contact with said continuous loop resistor element at the connection of said third and fourth resistor and a fourth electrical terminal disposed in ohmic contact with said continuous loop resistor element at the connection of said first and fourth resistor.

9. A thermally compensated silicon pressure sensor as claimed in claim 7, further comprising:

a sensor package connected to said clamp ring having a first port for applying a first pressure to said top surface of said diaphragm and a second port for applying a second pressure to said bottom surface of said diaphragm.

10. A thermally compensated silicon pressure sensor as claimed in claim 7, further comprising:

a sensor package connected to said clamp ring having a chamber enclosing one of said surfaces of said diaphragm at a fixed pressure and a port for applying a pressure to the other of said surfaces of said diaphragm.