Semiconductor pressure sensor having plural pressure sensitive diaphragms and method

• US 4,322,980 A
• Filed: 11/08/1979
• Issued: 04/06/1982
• Est. Priority Date: 11/08/1979
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Takahashi, Minoru, Sato, Hideo, Suzuki, Seikou, Kawakami, Kanji, Nishihara, Motohisa, Kobori, Shigeyuki, Hachino, Hiroaki
• Primary Examiner(s): Woodiel, Donald O.
• Application Number:
  US06/170,663
• Time in Patent Office: 880 Days
• Field of Search: 73/727, 73/726, 73/721, 73/720, 73/777, 338/4, 338/2, 338/42
• US Class Current: 73/727
• CPC Class Codes: G01L 19/0038 being part of the housing other details about the housing G01L19/14
• CPC Class Codes: G01L 19/147 Details about the mounting of the sensor to support or covering means
• CPC Class Codes: G01L 19/148 Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm
• CPC Class Codes: G01L 9/065 with temperature compensating means non electric temperature compensating means G01L19/04
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 23/15 Ceramic or glass substrates H01L23/142, H01L23/145, H01L23/147 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H10N 39/00 Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00

Abstract

A semiconductor pressure sensor having plural pressure sensitive diaphragms and capable of producing electric signals of at least two pressures.

A semiconductor pressure sensor has a semiconductor single crystal chip (1) on which two diaphragms (12a, 12b) are shaped, pairs of strain gauges (13a and 14a, and 13b and 14b), each of which pairs are constructed on each pressure sensitive diaphragm, electrodes (15a and 16a, and 15b and 16b) which are provided for electrical connections of these strain gauges on the semiconductor single crystal, and an insulating substrate of borosilicate glass, the thermal expansion coefficient is substantially equal tol that of said semiconductor single-crystal chip, wherein the semiconductor single-crystal chip (1) and the glass substrate (2) are bonded to each other by an Anodic Bonding method, thereby being able to obtain a semiconductor pressure sensor which scarcely producing errors outputs.

Claims

1. A semiconductor pressure sensor comprising:

a single-crystal semiconductor chip on which at least two pressure sensitive diaphragms are formed;

strain gauge means constructed on the respective diaphragms of said chip to produce output signals, one of the output signals being produced in response to an absolute pressure of atmosphere and the other output signals being produced in accordance with relative values of pressures to be measured with respect to the atmosphere;

electrodes provided on said chip for electrical connection of said strain gauge means; and

an insulating substrate having a thermal expansion coefficient substantially equal to that of said chip and attached to said chip by an anodic bonding method to form chambers together with the diaphragms of said chip, one of the chambers being maintained at vacuum and the pressures to be measured being led to the other chambers.

2. A semiconductor pressure sensor as claimed in claim 1, wherein said insulating substrate is composed of borosilicate glass.

3. A semiconductor pressure sensor as claimed in claim 1, wherein at least one opening is formed on said insulating substrate, at least one pressure being led to the corresponding chamber therethrough.

4. A semiconductor pressure sensor as claimed in claim 1, wherein said insulating substrate is attached on the surface of said semiconductor single-crystal chip opposite to the surface, on which said strain gauge means and said electrodes are formed.

5. A semiconductor pressure sensor as claimed in claim 1, wherein there is further provided means for detecting the resistance values of said strain guage means and producing the output signals, each of signals is proportional to the strain of the corresponding diaphragm of said semiconductor single-crystal chip.

18. A semiconductor pressure sensor as claimed in claim 1 or 6 wherein said anodic bonding method comprieses steps of:

piling up said semiconductor single-crystal chip and said insulating member;

attaching poles to said piled semiconductor single-crystal chip and said insulating member, respectively,

heating the piled semiconductor single-crystal chip and insulating material, and applying a predetermined voltage across the poles for a predetermined period.

6. A semiconductor pressure sensor comprising:

a single-crystal semiconductor chip on which at least two pressure sensitive diaphragms are formed;

strain gauge means constructed on the respective diaphragms of said chip to produce output signals, one of the output signals being produced in response to an absolute pressure of atmosphere and the other output signals being produced in accordance with relative values of pressures to be measured with respect to atmosphere;

electrodes provided on said chip for electrical connection of said strain gauge means;

an insulating substrate having a thermal expansion coefficient substantially equal to that of said chip and attached to said chip by an anodic bonding method to form chambers together with the diaphragms of said chip, one of the chambers having a pressure of atmosphere led thereto and the pressures to be measured being led to the other chambers; and

a covering member having a thermal expansion coefficient substantially equal to that of said chip and mounted on said chip to delimit another chamber together with said chip, the another chamber being maintained at vacuum.

7. A semiconductor pressure sensor as claimed in claim 6, wherein said covering member is composed of borosilicate glass.

8. A semiconductor pressure sensor as claimed in claim 6, wherein at least one groove is formed on said insulating substrate, at least one pressure being led to the corresponding chamber therethrough.

9. A semiconductor pressure sensor as claimed in claim 6, wherein said covering member is attached on the surface of said semiconductor single-crystal chip, on which surface said strain gauge means and said electrodes are formed.

10. A semiconductor pressure sensor as claimed in claim 6, wherein there is further provided means for detecting the resistance values of said strain gauge means and producing at least two electric signals, each of which signals is proportional to the strain of the corresponding diaphragm of said semiconductor single-crystal chip.

11. A semiconductor pressure sensor as claimed in claim 5 or 10, wherein two strain gauges are constructed on each diaphragm of said semiconductor single-crystal chip.

12. A semiconductor pressure sensor as claimed in claim 11, wherein said detecting and producing means comprises at least two pairs of series connected resistors, each of which pairs forms an active bridge circuit together with the corresponding pair of said strain gauges.

13. A semiconductor pressure sensor as claimed in claim 11, wherein said detecting and producing means further comprises at least two amplifier circuits for amplifying outputs appearing across the bridge circuits, respectively.

14. A semiconductor pressure sensor as claimed in claim 11, wherein there is further provided means for supplying the bridge circuits with exciting current, the amplitude of the exciting current being controlled depending on an ambient temperature.

15. A semiconductor pressure sensor as claimed in claim 14, wherein said exciting current supplying means includes a thermistor.

16. A semiconductor pressure sensor as claimed in claim 10, wherein plural openings are formed on said covering member at the positions corresponding to said electrodes formed on said semiconductor single-crystal chip, the electrical connection between said gauges within said covering member and said detecting means being achieved through the openings.

17. A semiconductor pressure sensor as claimed in claim 10, wherein said electrodes are formed on said semiconductor single-crystal chip expanding over said covering member, the electrical connection between said gauges within said covering member and said detecting means being achieved through the expanding portions of said electrodes.

19. A semiconductor pressure sensor comprising:

a single-crystal semiconductor chip on which at least two pressure sensitive diaphragms are formed;

strain gauge means constructed on the respective diaphragms of said chip to produce output signals, one of the output signals being produced in response to an absolute pressure of atmosphere and the other output signals being produced in accordance with relative values of pressures to be measured with respect to atmosphere;

a potential source means for exciting said strain gauge means, said source means having means for compensating an exciting voltage commonly to all of said strain gauge means in accordance with the variation of an ambient temperature; and

an insulating substrate having a thermal expansion coefficient substantially equal to that of said chip and attached to said chip by an anodic bonding method to form chambers together with the diaphragms of said chip, one of the chambers being utilized for detection of the absolute pressure of atmosphere and the other chambers being utilized to detect the pressures to be measured.