Temperature-correction network for extrapolated band-gap voltage reference circuit
First Claim
1. A circuit for generating temperature dependent current for reducing the temperature dependence of a temperature dependent signal in an electrical circuit comprising:
- resistance means having first and second ends for providing a resistance therebetween that exhibits a temperature coefficient;
semiconductor junction means having first and second ends for exhibiting a conduction potential responsive to current flow therethrough, which conduction potential exhibits a temperature coefficient of different value than that of said resistance;
means for maintaining related potentials across said resistance means and said semiconductor junction means;
current supplying means for supplying current to said resistance means and said semiconductor junction means so that the respective current through each is substantially equal to the difference between said supply current and the current in the other of said resistance means and said semiconductor junction means, whereby the current in each varies at a different rate with temperature;
means connected to one of said resistance means and said semiconductor junction means for receiving a substantial portion of the current therethrough and for developing said temperature dependent current in response to said substantial portion of the current; and
means for applying said temperature dependent current to said electrical circuit to effect said reduction.
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Accused Products
Abstract
A circuit for generating temperature dependent current for compensating an electrical circuit comprises a resistor and a semiconductor junction having different temperature coefficients. A current applied to the semiconductor junction conditions it for conduction and related potentials are maintained across the resistor and the semiconductor junction. Means receiving a portion of the current in one of the resistor and semiconductor junction develops the temperature dependent current in response to the portion. The temperature dependent current is applied to the electrical circuit to effect the desired compensation. One embodiment of the present invention includes a band-gap reference potential generating circuit in which a semiconductor junction thereof receives the temperature dependent current. Other embodiments of the present invention are employed to develop currents that are dependent upon a temperature function raised to a power.
39 Citations
21 Claims
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1. A circuit for generating temperature dependent current for reducing the temperature dependence of a temperature dependent signal in an electrical circuit comprising:
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resistance means having first and second ends for providing a resistance therebetween that exhibits a temperature coefficient; semiconductor junction means having first and second ends for exhibiting a conduction potential responsive to current flow therethrough, which conduction potential exhibits a temperature coefficient of different value than that of said resistance; means for maintaining related potentials across said resistance means and said semiconductor junction means; current supplying means for supplying current to said resistance means and said semiconductor junction means so that the respective current through each is substantially equal to the difference between said supply current and the current in the other of said resistance means and said semiconductor junction means, whereby the current in each varies at a different rate with temperature; means connected to one of said resistance means and said semiconductor junction means for receiving a substantial portion of the current therethrough and for developing said temperature dependent current in response to said substantial portion of the current; and means for applying said temperature dependent current to said electrical circuit to effect said reduction. - View Dependent Claims (2, 3, 4, 5, 6)
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7. In a potential generating circuit of the type wherein a pair of bipolar transistors is conditioned to operate at different emitter current densities, and the difference between their respective base-emitter junction potentials is scaled up and combined with the forward conduction potential of a reference semiconductor junction to develop a reference potential tending to have a maximum value to a predetermined temperature and lesser values at temperatures removed therefrom, the improvement comprising:
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resistance means having first and second ends for providing a resistance that exhibits a temperature coefficient; semiconductor junction means having first and second electrodes, the first electrode connected to the first end of said resistance means, for exhibiting a conduction potential having a temperature coefficient of value different than that of said resistance;
means connected to the second end of said resistance means and to the second electrode of said semiconductor junction means for maintaining the potential therebetween in predetermined relationship;means for supplying current to the first end of said resistance means and the first electrode of said semiconductor junction means so that the respective current through each is substantially equal to the difference between said supplied current and the current in the other of said resistance means and said semiconductor junction means, whereby the current in each varies at a different rate with temperature; and means having an input connection connected to one of the second end of said resistance means and the second electrode of said semiconductor junction means for receiving a substantial portion of the current flow therethrough, and having an output connection for applying a current responsive to said portion of the current flow to said potential generating circuit to make the lesser value of said reference potential more closely approach the maximum value thereof. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. In a potential generating circuit of the type wherein a pair of bipolar transistors are conditioned to operate at different emitter current densities, and the difference between their respective base-emitter junction potentials is scaled up and combined with the forward conduction potential of a reference semiconductor junction to develop a reference potential tending to have a maximum value at a predetermined temperature and lesser values at temperatures removed therefrom, the improvement comprising:
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means for applying a temperature dependent current to said reference semiconductor function, which current includes a component that is dependent upon a function of temperature raised to a power greater than unity, including; resistance means having first and second ends for providing a resistance that exhibits a temperature coefficient; semiconductor junction means having first and second ends for exhibiting a conduction potential responsive to current flow therethrough, which conduction potential exhibits a temperature coefficient of different value than that of said resistance; means for maintaining related potentials across said resistance means and said semiconductor junction means; current supplying means for supplying current to said resistance means and said semiconductor junction means so that the respective current through each is substantially equal to the difference between said supply current and the current in the other of said resistance means and said semiconductor junction means, whereby the current in each varies at a different rate with temperature; means connected to one of said resistance means and said semiconductor junction means for receiving a portion of the current therethrough and for developing said temperature dependent current in response to said portion of the current; and
whereinsaid means for applying applies said temperature dependent current to said reference semiconductor junction to make the lesser value of said reference potential more closely approach the maximum value thereof. - View Dependent Claims (15, 16, 17, 18, 19)
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20. In a reference potential generating circuit of the type wherein first and second bipolar transistors of like conductivity type having their base electrodes interconnected are conditioned to operate at different emitter current densities, the difference between their respective base-emitter junction potentials being impressed across a first resistor connected between their respective emitter electrodes, and a second resistor connects at its first end to the emitter electrode of said first transistor for conducting the sum of the emitter currents of said first and second transistors, a reference potential being developed between the base electrode interconnection of said first and second transistors and the second end of said second resistor, the improvement comprising:
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first and second output terminals; semiconductor junction means having a first electrode connecting to the second end of said second resistor, poled for conduction to receive the current therethrough, and having a second electrode connected to said first output terminal; means included within said second resistor for providing a potential intermediate to those at its first and second ends; a third bipolar transistor having a base electrode connected to the base electrode of said second transistor, having a collector electrode connected to receive an operating potential, and having an emitter electrode connected to said second output terminal; and a fourth bipolar transistor having a base electrode connected to receive said intermediate potential, having a collector electrode connected to said second output terminal, and having an emitter electrode connected to said first output terminal. - View Dependent Claims (21)
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Specification