Method of manufacturing semiconductor devices having photoresist film as a permanent layer

• US 4,328,262 A
• Filed: 07/28/1980
• Issued: 05/04/1982
• Est. Priority Date: 07/31/1979
• Status: Expired due to Term

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Ono, Toshihiko, Tokitomo, Kazuo, Kurahashi, Toshio
• Primary Examiner(s): Smith, John D.
• Assistant Examiner(s): Plantz, Bernard F.
• Application Number:
  US06/172,822
• Time in Patent Office: 645 Days
• Field of Search: 427/82, 427/84, 427/87, 427/88, 427/96, 427/407.1, 427/93, 427/95, 427/90, 29/588, 430/315, 430/314, 357/54
• US Class Current: 438/702
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/0272 for lift-off processes
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C
• CPC Class Codes: H01L 23/293 Organic, e.g. plastic
• CPC Class Codes: H01L 23/296 Organo-silicon compounds
• CPC Class Codes: H01L 23/3192 Multilayer coating
• CPC Class Codes: H01L 23/556 against alpha rays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A layer of aluminum on a semiconductor substrate is covered by a layer of phospho-silicate glass. The surface of the semiconductor chip is covered with a positive photoresist film which is then heat treated. An upper surface of the photoresist film is covered with a polyimide resin which is heat treated, thereafter. If the semiconductor device is devoid of the layer of phospho-silicate glass, and the layer of aluminum is exposed, a positive photoresist film is interposed on the aluminum and the polyimide resin is applied to cover the upper surface of the interlayer, and is heat treated.

Claims

1. A method of manufacturing a semiconductor device having a semiconductor substrate, said method comprising the steps of

forming an insulator layer of a material from a group consisting of phospho-silicate glass and silicon oxide on the substrate;

covering a surface of the insulator layer with a photoresist film;

carrying out a first heat treatment of said substrate to harden the photoresist film;

covering an upper surface of the hardened photoresist film with a thermosetting resin film; and

carrying out a second heat treatment at a temperature higher than 300°

C. to cure the thermosetting resin film.

2. A method as claimed in claim 1, wherein said photoresist film consists of a positive photoresist compound.

3. A method as claimed in claim 1, wherein said thermosetting resin film consists of a polyimide compound.

4. A method of manufacturing a semiconductor device having a semiconductor substrate and a wiring layer of aluminum on the substrate, said method comprising the steps of

forming a photoresist film on the substrate to cover the wiring layer;

carrying out a first heat treatment of said substrate to harden the photoresist film;

forming a thermosetting resin film on said substrate to cover said photoresist film;

partially removing the thermosetting resin film to form an opening at the aluminum wiring layer; and

carrying out a second heat treatment to cure said thermosetting resin film.

5. A method as claimed in claim 4, wherein the second heat treatment is carried out at a temperature higher than 300°

C.

6. A method as claimed in claim 4, wherein said photoresist film consists of a positive photoresist compound.

7. A method as claimed in claim 4, wherein said thermosetting resin film consists of a polyimide resin compound.

8. A method of manufacturing a semiconductor device having a semiconductor substrate and a wiring layer formed on the substrate, said method comprising the steps of

forming an insulator layer on the substrate to cover the wiring layer;

forming a photoresist film on said substrate to cover the insulator layer;

carrying out a first heat treatment of said substrate to harden the photoresist film;

forming an opening in said photoresist film at a part of the wiring layer;

etching of said insulator layer to form an opening at the wiring layer;

forming a thermosetting resin film on said substrate to cover said photoresist film;

partially removing the thermosetting resin film to form an opening at the wiring layer; and

carrying out a second heat treatment to cure said thermosetting resin film whereby said thermosetting resin film serves as a protective film of the device.

9. A method as claimed in claim 8, wherein said insulator film consists of phospho-silicate glass.

10. A method as claimed in claim 8, wherein the second heat treatment is carried out at a temperature higher than 300°

C.

11. A method as claimed in claim 8, wherein said photoresist film consists of a positive photoresist compound.

12. A method as claimed in claim 8, wherein said thermosetting resin consists of a polyimide resin compound.