Temperature detecting apparatus

• US 4,331,888 A
• Filed: 08/24/1979
• Issued: 05/25/1982
• Est. Priority Date: 08/24/1978
• Status: Expired due to Term

• Current Assignee: Hochiki Corporation
• Original Assignee: Hochiki Corporation
• Inventors: Yamauchi, Yukio
• Primary Examiner(s): Miller, Jr., Stanley D.
• Assistant Examiner(s): Davis, B. P.
• Application Number:
  US06/069,405
• Time in Patent Office: 1,005 Days
• Field of Search: 328/8, 307/310, 330/256, 73/362 C, 340/588, 340/589
• US Class Current: 340/598
• CPC Class Codes: G01K 7/01 using semiconducting elements having PN junctions G01K7/02, G01K7/16, G01K7/30 take precedence

Abstract

A temperature detecting apparatus having a first transistor connected in diode configuration or a first diode, with its forward current set in certain value. A second transistor has similar electrical characteristics as the first transistor or the first diode, with the anode or cathode of the first transistor or the first diode being connected to the base of the second transistor. The temperature difference between the first transistor or the first diode and the second transistor is detected by means of the variation of the collector current of the second transistor. In another embodiment, a third transistor matched to second one is used with common base connections. The first transistor is coupled to the common base coupling.

Claims

1. A temperature detecting apparatus, comprising:

a first transistor having an emitter, base and collector and having a thermal time constant with respect to ambient temperature;

a first current path including the emitter-collector path of said first transistor;

a semi-conductor element having an anode and a cathode and a rectifying PN junction therebetween, said semi-conductor element having a thermal time constant with respect to ambient temperature which is differentfrom the thermal time constant of said first transistor;

a second current path including said anode and cathode of said semi-conductor element, one of said anode and cathode terminals being coupled to said first transistor base; and

detection means responsive to current variations in said first or second current paths for detecting a rate of ambient temperature change which exceeds a predetermined value.

2. The apparatus of claim 1, wherein said semi-conductor element is a second transistor having an emitter, base and collector and connected in a diode configuration.

3. The apparatus of claim 1, wherein the anode of said semi-conductor element connected in diode configuration is coupled to the base of said first transistor.

4. The apparatus of claim 1, wherein the cathode of said semi-conductor element connected in diode configuration is coupled to the base of said first transistor.

5. The apparatus of claims 1 or 2 wherein said second current path further comprises a constant current circuit connected in series with said semi-conductor element.

6. The apparatus of claim 1, wherein said first current path further comprises a first resistor connected between a power supply terminal and said emitter of said first transistor and said second current path further comprises a second resistor connected between said power supply terminal and said semi-conductor element, the values of said first resistor and said second resistor being approximately identical to each other.

7. The apparatus of claim 6, wherein the product of the value of said first or second resistor and the forward current of said semi-conductor element exceeds 0.06 (Ω

·

A).

8. The apparatus of claim 6, wherein the product of the value of said first or second resistor and the collector current of said first transistor exceeds 0.06 (Ω

·

A).

9. The apparatus of claim 6, wherein said second resistor is coupled between the anode of said semi-conductor and said power supply.

10. The apparatus of claim 6, wherein said second resistor is coupled between a cathode of said semi-conductor and said power supply.

11. The apparatus of claim 2 wherein said first current path further comprises a first resistor connected between a power supply and the emitter of said first transistor, and said second current path further comprises a second resistor connected between the power supply and the emitter of said second transistor, the values of said first resistor and said second resistor being approximately identical to each other.

12. The apparatus of claim 11, wherein the product of the value of said first or second resistor and the collector current of said first transistor exceeds 0.06 (Ω

·

A).

13. The apparatus of claims 6 or 11, further comprising a comparator circuit including a switching device having PN junction, said comparator circuit being arranged to produce an output when the difference between the currents of said first and second current paths.

14. The apparatus of claim 13 further comprising means for changing the value of said first resistor or said second resistor to vary the collector current of said transistor.

15. The apparatus of claims 6, 7, 8, 9, 10, 11 or 12, further comprising means for changing the value of said first resistor or said second resistor to vary the collector current of said second transistor.

18. The apparatus of claim 1, wherein said first current path further comprises a first resistor connected between a power supply terminal and the emitter of said first transistor, and said second current path further comprises a second resistor connected between said power supply terminal and said semi-conductor element, the value of said first resistor being greater than the value of said second resistor whereby the current through said first current path is substantially proportional to absolute temperature.

19. The temperature detecting apparatus of either claim 1 or 16, wherein said detection means provides an output signal in response to an excessive current difference between said first and second current paths, said apparatus further comprising means responsive either to said output signal or to an excessive absolute temperature for indicating an excessive temperature condition.

20. The temperature detecting apparatus of claim 1, wherein said detection means compares currents through said first and second current paths.

16. A temperature detecting apparatus, comprising:

a first transistor having an emitter, base and collector and having a first thermal time constant with respect to ambient temperature;

a first current path including the emitter-collector path of said first transistor;

a semi-conductor element coupled in diode configuration and having an anode and a cathode and a rectifying PN junction therebetween, said semi-conductor element having a second thermal time constant with respect to ambient temperature which differs from said first thermal time constant;

a second current path including the anode and cathode of said semi-conductor element, one of said anode and cathode being coupled to said first transistor base;

a second transistor having an emitter, base and collector and having a third thermal time constant with respect to ambient temperature which is substantially the same as said second thermal time constant, the base of said second transistor being coupled to the base of said first transistor;

a third current path including the emitter-collector path of said second transistor; and

means for comparing the currents through said first and third current paths to detect a rate of ambient temperature increase which exceeds a predetermined value.

17. The apparatus of claim 16, wherein said semi-conductor element comprises a third transistor having its base coupled to the bases of said first and second transistors.