Magnetic garnet film and manufacturing method therefor

• US 4,333,991 A
• Filed: 04/27/1981
• Issued: 06/08/1982
• Est. Priority Date: 05/01/1980
• Status: Expired due to Term

• Current Assignee: Olympus Optical Company Ltd. (Olympus Corporation)
• Original Assignee: Olympus Optical Company Ltd. (Olympus Corporation)
• Inventors: Sakurai, Yoshifumi
• Primary Examiner(s): Clements, Gregory N.
• Application Number:
  US06/258,005
• Time in Patent Office: 407 Days
• Field of Search: 156/622, 156/621, 156/DIG. 74, 156/DIG. 63, 156/DIG. 79, 23/305 RE, 427/86, 427/128, 252/62.57, 428/702
• US Class Current: 428/702
• CPC Class Codes: C30B 19/02 using molten solvents, e.g. flux
• CPC Class Codes: C30B 29/28 with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
• CPC Class Codes: H01F 10/245 Modifications for enhancing interaction with electromagnetic wave energy

Abstract

Disclosed is a magnetic garnet film which has a composition (BiGdLu)₃ (FeAl)₅ O₁₂ or (BiGdSm)₃ (FeAl)₅ O₁₂.

Claims

1. A magnetic garnet film having a composition selected from the group consisting of (BiGdLu)₃ (FeAl)₅ O₁₂ and (BiGdSm)₃ (FeAl)₅ O₁₂.

2. A magnetic garnet film according to claim 1, wherein said garnet film is composed of a single crystal grown on a substrate having a composition selected from the group consisting of Gd₃ Ga₅ O₁₂, Sm₃ Ga₅ O₁₂, and Nd₃ Ga₅ O₁₂.

3. A magnetic garnet film according to claim 1 or 2, wherein said garnet film is layered on a photoelectric film.

4. A process for growing a magnetic garnet film comprising growing a single crystal garnet having a composition selected from the group consisting of (BiGdLu)₃ (FeAl)₅ O₁₂ and (BiGdSm)₃ (FeAl)₅ O₁₂ on a substrate having a composition selected from the group consisting of Gd₃ Ga₅ O₁₂, Sm₃ Ga₅ O₁₂, and Nd₃ Ga₅ O₁₂.

5. A process according to claim 4, wherein said single crystal is grown by the liquid crystal epitaxy growth method.

6. A process according to claim 5, wherein said substrate is rotated while growing said single crystal for controlling the maximum coercive force temperature.

7. A garnet film manufactured by a process according to any one of claims 4 to 6.

8. A magnetic garnet film having a composition selected from the group consisting of (BiGdLu)₃ (FeAl)₅ O₁₂ and (BiGdSm)₃ (FeAl)₅ O₁₂, said garnet film being composed of a single crystal grown on a substrate having a composition selected from the group consisting of Gd₃ Ga₅ O₁₂, Sm₃ Ga₅ O₁₂ and Nd₃ Ga₅ O₁₂, and being multilayered with a photoelectric film.

9. A process for growing a magnetic garnet film comprising growing by the liquid crystal epitaxy growth method a single crystal garnet having a composition selected from the group consisting of (BiGdLu)₃ (FeAl)₅ O₁₂ and (BiGdSm)₃ (FeAl)₅ O₁₂ on a substrate having a composition selected from the group consisting of Gd₃ Ga₅ O₁₂, Sm₃ Ga₅ O₁₂, and Nd₃ Ga₅ O₁₂, said substrate being rotated while growing said single crystal for controlling the maximum coercive force temperature.