Semiconductor device

• US 4,337,474 A
• Filed: 08/28/1979
• Issued: 06/29/1982
• Est. Priority Date: 08/31/1978
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Yukimoto, Yoshinori
• Primary Examiner(s): Edlow, Martin H.
• Application Number:
  US06/071,031
• Time in Patent Office: 1,036 Days
• Field of Search: 357/22, 357/13, 357/37, 357/34, 357/15
• US Class Current: 257/493
• CPC Class Codes: H01L 29/0821 Collector regions of bipolar transistors

Abstract

An n collector is sandwiched between an n⁺ collector a p base including an n⁺ emitter and includes a p⁺ gate connected to the base. Another n⁺ collector is disposed in the n^- collector at the junction between the n^- and n⁺ collector to oppose to the emitter and shaped to be parallel to a shape of a spread edge of a depletion layer from the gate. Alternatively an n collector may be substituted for the p base and include the p base from which the p⁺ gate extends through the n collector into the n^- collector.

Claims

1. A semiconductor device comprising, in combination, a first collector region of a first type conductivity, a second collector region having the first type conductivity and disposed on said first collector region and forming a first junction therebetween, said second collector region having an impurity concentration less than the impurity concentration of said first collector region, a base region of a second type conductivity disposed adjacent to said second collector region and forming a second junction therebetween, an emitter region of the first type conductivity disposed adjacent to said base region and forming a third junction therebetween and positioned for forming a current path along which a current flows between said emitter region and said first and second collector regions and also forming fourth junctions between said emitter region and said second collector region, and an annular gate region of the second type conductivity around said current path and extending from said base region into said second collector region, said gate region being connected to said base region for being at the same potential as said base region, and a third collector region of the first type conductivity disposed between said second collector region and said base region and having a higher impurity concentration than that of said second collector region and forming junctions with each of said second collector region and said base region and said annular gate region projecting through said third collector region into said second collector region and being surrounded by said third collector region.