High speed wire bonding method
First Claim
1. A method for high speed bonding fine wire to a semiconductor device comprising the step of:
- moving a bonding tool to a position opposite an electrode on a semiconductor device,accelerating said bonding tool toward said electrode,terminating said acceleration of said bonding tool before engaging said semiconductor device,further moving said bonding tool toward said semiconductor device at a substantially linear velocity,engaging said semiconductor device with said bonding tool at said linear velocity to impart controlled kinetic energy to said fine wire as a first bonding force,applying a second predetermined preload bonding force to said first bonding force at the time of engagement of said bonding tool with said semiconductor device, andapplying a third and final bonding force to said bonding tool after the termination of said first bonding force.
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Accused Products
Abstract
A method for high speed bonding of fine wires to electrodes is provided employing a processor controlled wire bonder wherein the bonding tool of the wire bonder is positioned over an electrode on a simiconductor and is accelerated toward the electrode. Shortly before the bonding tool reaches the electrode, the bonding tool is moved toward the electrode at a substantially linear predetermined velocity so that the bonding tool imparts a controlled kinetic energy to the wire as a first bonding force, a second predetermined preload bonding force is applied to the bonding tool at the time of engagement and subsequently a third and final predetermined bonding force is applied to the bonding tool to bond the fine wire to the electrode at high speeds.
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Citations
3 Claims
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1. A method for high speed bonding fine wire to a semiconductor device comprising the step of:
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moving a bonding tool to a position opposite an electrode on a semiconductor device, accelerating said bonding tool toward said electrode, terminating said acceleration of said bonding tool before engaging said semiconductor device, further moving said bonding tool toward said semiconductor device at a substantially linear velocity, engaging said semiconductor device with said bonding tool at said linear velocity to impart controlled kinetic energy to said fine wire as a first bonding force, applying a second predetermined preload bonding force to said first bonding force at the time of engagement of said bonding tool with said semiconductor device, and applying a third and final bonding force to said bonding tool after the termination of said first bonding force. - View Dependent Claims (2, 3)
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Specification