Planar semiconductor three direction acceleration detecting device and method of fabrication

• US 4,342,227 A
• Filed: 12/24/1980
• Issued: 08/03/1982
• Est. Priority Date: 12/24/1980
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Petersen, Kurt E., Shartel, Anne C.
• Primary Examiner(s): Gill, James J.
• Application Number:
  US06/219,685
• Time in Patent Office: 587 Days
• Field of Search: 73/514, 73/510, 73/515, 73/516 R, 73/517 R, 73/517 B, 73/862.48
• US Class Current: 73/510
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up

Abstract

This device comprises a v-shaped cavity in a planar semiconductor substrate having a substantially thin-walled v-shaped cantilever beam inset therein. The beam is movable in directions normal to and laterally of the plane of the substrate, whereby acceleration is sensed in both of these directions. A planar substrate of n-type silicon is arranged with the major face oriented in the (100) plane. A v-shaped groove is anisotropically etched in the substrate and capacitor electrode regions are diffused into the sloping walls. An epitaxial layer is grown over this substrate, and over that a layer of insulation is added. A layer of conductive material is laid down on the insulation to define an electrode. The substrate is again subjected to an anisotropic etchant for cutting the epitaxial layer from under the cantilever beam formed of the insulating layer and the conducting layer. The electrodes form two variable capacitors which are connected in parallel or differentially to simple circuitry laid down on the same substrate for resolving the bidirectional movement of the beam. Three such devices appropriately oriented, and compatible electronic circuitry, enable all three spatial coordinates to be probed with a single substrate assembly.

Claims

1. A planar semiconductor acceleration detecting device comprising

a substrate of semiconductor material having an elongated v-shaped cavity therein,

a v-shape cantilever beam arranged in said v-shaped cavity and depending from one end thereof for movement into and out of said cavity and movement from side to side in said cavity,

electrodes of conductive material arranged on the sloping walls of said cavity and on the sloping walls of said beam, and

an electronic circuitry coupled to said electrodes and arranged for indicating the degree of acceleration to which said device is subjected in terms of the instantaneous capacity between said electrodes in said cavity and on said beam.

2. A planar semiconductor acceleration device as defined in claim 1, and wherein

said electronic circuitry comprises

an electric bridge circuit having four arms each comprising a capacitor with two arms comprising variable capacitors formed by the electrodes on the sloping walls of said cavity and on the sloping walls of said beam,

an electric energizing potential source connected across one diagonal of said bridge circuit,

a differential amplifier circuit having output terminals at which an indication of acceleration is delivered and differential input terminals coupled across the other diagonal of said bridge circuit.

3. A planar semiconductor acceleration device as defined in claim 2, and wherein

said input terminals of said differential amplifier circuit are coupled across said bridge circuit by four field effect transistors connected to said capacitors as to vary the resistance in accordance with the variable capacitor connected between the gate electrode and the drain electrode in said two arms,

thereby to unbalance said amplifier circuit in accordance with the degree of acceleration to which said device is subjected.

4. A planar semiconductor acceleration detecting device comprising

an n-type silicon substrate having an elongated v-shaped cavity therein,

electrodes of p+ boron diffused in the sloping walls of said circuitry,

a v-shaped cantilever beam arranged in said v-shaped cavity and depending from one end thereof for movement into and out of said cavity and movement from side to side in said cavity,

metal electrode material arranged on the sloping walls of said beam, and

an electronic circuitry coupled to said electrodes and arranged for indicating the degree of acceleration to which said device is subjected in terms of the instantaneous capacity between said electrodes in said cavity and on said beam.

5. A planar semiconductor acceleration detecting device comprising

an n-type silicon substrate having an elongated v-shaped cavity therein,

electrodes of p+ boron diffused in the sloping walls of said circuitry,

a thin-walled v-shaped cantilever beam SiO₂ arranged in said v-shaped cavity and depending from one end thereof for movement into and out of said cavity and movement from side to side in said cavity,

conductive electrode material arranged on the sloping walls of said beam, and

an electronic circuitry coupled to said electrodes and arranged for indicating the degree of acceleration to which said device is subjected in terms of the instantaneous capacity between said electrodes in said cavity and on said beam.

6. A method of fabricating a planar semiconductor device having a cantilever beam arranged therein for movement in a direction parallel to the plane of said device, comprising the steps of:

preparing a monocrystalline silicon wafer with the major surface lying in the (100) plane,

anisotropically etching an elongated pyramidal cavity in said wafer from said major surface,

doping sloping wall regions defining said cavity with a dopant of type opposite to the type of said wafer,

growing an epitaxial layer over the major surface and the sloping walls of said cavity,

depositing an insulating layer over all of said epitaxial layer,

etching said insulating layer to define said cantilever beam over said cavity with the beam depending from one narrow end of the cavity,

depositing a layer of conductive material over said insulating layer and delineating the pattern photolithographically, and

anisotropically etching away the epitaxial layer from under said beam.

7. A method of fabricating a planar semiconductor device having a cantilever beam arranged therein for movement in a direction parallel to the plane of said device, comprising the steps of:

preparing an n-type monocrystalline silicon wafer with the major surface lying in the (100) plane,

anisotropically etching an elongated pyramidal cavity in said wafer from said major surface,

doping sloping wall regions defining said cavity with a dopant of p+ boron,

growing an n-type epitaxial layer over the major surface and the sloping walls of said cavity,

depositing an insulating layer of SiO₂ over all of said epitaxial layer,

etching said insulating layer to define said cantilever beam over said cavity with the beam depending from one narrow end of the cavity,

depositing a layer of aluminum over said insulating layer and delineating the pattern photolithographically, and

anisotropically etching away the epitaxial layer from under said beam.

8. A method of fabricating a planar semiconductor device as defined in claim 7, and incorporating the step of:

processing said wafer, after depositing said insulating layer, for defining field effect transistor, capacitors, resistors and the like for interconnection as electronic circuitry for indicating the degree of acceleration and the like.

9. A planar semiconductor acceleration detecting device, comprising

a substrate of semiconductor material having two elongated v-shaped cavities therein arranged with the longitudinal axes at 90°

with respect to each other,

a v-shaped cantilever beam arranged in each of said v-shaped cavities and depending from one end thereof for movement from side to side in said cavity,

electrodes of conductive material arranged on the sloping walls of said cavities and on the sloping walls of said beams, and

an electronic circuitry coupled to said electrodes and arranged for indicating the degree of acceleration to which said device is subjected in terms of the instantaneous capacity between said electrodes in said cavities and on the respective beams,

thereby to indicate acceleration components in two directions substantially parallel to the plane of said substrate.

10. A planar semiconductor acceleration detecting device as described in claim 9, and incorporating

a third v-shaped cavity and v-shaped beam assembly and electrodes therefor, and

electronic circuitry coupled to the electrodes for determining the acceleration in a direction normal to the plane of said substrate.