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Light emitting diodes with high external quantum efficiency

  • US 4,342,944 A
  • Filed: 09/15/1980
  • Issued: 08/03/1982
  • Est. Priority Date: 09/10/1980
  • Status: Expired due to Term
First Claim
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1. A surface emitting light emitting diode comprising:

  • a semiconductor substrate on which is grown a double heterostructure consisting of a first confining layer, an active layer, and a second confining layer;

    a transparent element on one side of the heterostructure permitting exit of light emitted from an emitting region of the active layer;

    a reflective element on the other side of the heterostructure for reflecting emitted light towards the transparent element, the transparent element, the emitting region, and the reflective element being substantially aligned;

    first contact metallization extending around the transparent element;

    a second contact metallization extending around the reflective element; and

    current directing means causing current entering at one contact metallization to converge towards the emitting region and to diverge from the emitting region to the other contact metallization.

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