Semiconduction stress sensing apparatus
First Claim
1. A stress transducing system supported in and on a semiconductor material stress sensing structure having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof, with said structure having a major surface bounding semiconductor material, said semiconductor material being of a first conductivity type except in selected locations thereof, said major surface being common to both said diaphragm and said constraint, said stress transducing system comprising:
- a first semiconductor piezoresistive domain in said semiconductor material at a said selected location extending at least in part into said diaphragm, and with said domain being adjacent to said major surface, said first semiconductor piezoresistive domain having first and second terminating regions, said first semiconductor piezoresistive domain having therein a first distribution of dopant atoms with depth into said semiconductor material away from said major surface which leads to said first semiconductor piezoresistive domain being of a second conductivity type and having a temperature coefficient of resistance of a first magnitude which is effective in a first magnitude direction, said first semiconductor piezoresistive domain being a component part of a stress sensing circuit which is capable of providing a stress sensing circuit first output signal at a stress sensing circuit first output region of a magnitude varying in correspondence to changes in magnitude of stress applied to said diaphragm, said stress sensing circuit first output signal varying with such stress, as aforesaid, in a manner characteristic of said first semiconductor piezoresistive domain and remaining portions of said structure to thereby establish a stress sensing characteristic which characteristic also depends upon temperatures occurring in said structure;
a first semiconductor resistive domain in said semiconductor material at a said selected location and adjacent to said major surface, said first semiconductor resistive domain having first and second terminating regions, said first semiconductor resistive domain having substantially said first distribution of dopant atoms therein leading to said first semiconductor resistive domain being of said second conductivity type and having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said first resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said first semiconductor resistive domain being a component part of a signal processing circuit having a signal processing circuit first input region which is electrically connected to said stress sensing circuit first output region and having a signal processing circuit output region, said signal processing circuit being capable of providing a stress transducer system output signal at said signal processing circuit output region which is a version of said stress sensing circuit first output signal but as compensated to be substantially free of effects of said temperature dependence in said stress sensing circuit characteristic; and
a first primarily resistive domain adjacent to said major surface and supported by said structure, said first primarily resistive domain having first and second terminating regions, said first primarily resistive domain having a temperature coefficient of resistance of a magnitude substantially less than said first magnitude, said first primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm and being a component part of said signal processing circuit.
1 Assignment
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Accused Products
Abstract
An integrated circuit stress transducer system including signal processing circuitry responsive to signals from semiconductor stress sensors where the processing circuitry output signals are compensated for sensor stress sensitivity variations.
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Citations
59 Claims
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1. A stress transducing system supported in and on a semiconductor material stress sensing structure having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof, with said structure having a major surface bounding semiconductor material, said semiconductor material being of a first conductivity type except in selected locations thereof, said major surface being common to both said diaphragm and said constraint, said stress transducing system comprising:
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a first semiconductor piezoresistive domain in said semiconductor material at a said selected location extending at least in part into said diaphragm, and with said domain being adjacent to said major surface, said first semiconductor piezoresistive domain having first and second terminating regions, said first semiconductor piezoresistive domain having therein a first distribution of dopant atoms with depth into said semiconductor material away from said major surface which leads to said first semiconductor piezoresistive domain being of a second conductivity type and having a temperature coefficient of resistance of a first magnitude which is effective in a first magnitude direction, said first semiconductor piezoresistive domain being a component part of a stress sensing circuit which is capable of providing a stress sensing circuit first output signal at a stress sensing circuit first output region of a magnitude varying in correspondence to changes in magnitude of stress applied to said diaphragm, said stress sensing circuit first output signal varying with such stress, as aforesaid, in a manner characteristic of said first semiconductor piezoresistive domain and remaining portions of said structure to thereby establish a stress sensing characteristic which characteristic also depends upon temperatures occurring in said structure; a first semiconductor resistive domain in said semiconductor material at a said selected location and adjacent to said major surface, said first semiconductor resistive domain having first and second terminating regions, said first semiconductor resistive domain having substantially said first distribution of dopant atoms therein leading to said first semiconductor resistive domain being of said second conductivity type and having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said first resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said first semiconductor resistive domain being a component part of a signal processing circuit having a signal processing circuit first input region which is electrically connected to said stress sensing circuit first output region and having a signal processing circuit output region, said signal processing circuit being capable of providing a stress transducer system output signal at said signal processing circuit output region which is a version of said stress sensing circuit first output signal but as compensated to be substantially free of effects of said temperature dependence in said stress sensing circuit characteristic; and a first primarily resistive domain adjacent to said major surface and supported by said structure, said first primarily resistive domain having first and second terminating regions, said first primarily resistive domain having a temperature coefficient of resistance of a magnitude substantially less than said first magnitude, said first primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm and being a component part of said signal processing circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51)
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52. A stress transducing system supported in and on a semiconductor material stress sensing structure having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof, with said structure having a major surface bounding semiconductor material, said semiconductor material being of a first conductivity tape except in selected locations thereof, said major surface being common to both said diaphragm and said constraint, said stress transducing system comprising:
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a first semiconductor piezoresistive domain in said semiconductor material at a said selected location extending at least in part into said diaphragm, and with said domain being adjacent to said major surface, said first semiconductor piezoresistive domain having first and second terminating regions, said first semiconductor piezoresistive domain having therein a first distribution of dopant atoms with depth into said semiconductor material away from said major surface which leads to said first semiconductor piezoresistive domain being of a second conductivity type and having a temperature coefficient of resistance of a first magnitude which is effective in a first magnitude direction, said first semiconductor piezoresistive domain being a component part of a stress sensing circuit which is capable of providing a stress sensing circuit first output signal at a stress sensing circuit first output region of a magnitude varying in correspondence to changes in magnitude of stress applied to said diaphragm, said stress sensing circuit first output signal varying with such stess, as aforesaid, in a manner characteristic of said first semiconductor piezoresistive domain and remaining portions of said structure to thereby establish a stress sensing characteristic which characteristic also depends upon temperatures occurring in said structure; a first semiconductor resistive domain in said semiconductor material at a said selected location and adjacent to said major surface, said first semiconductor resistive domain having first and second terminating regions, said first semiconductor resistive domain having substantially said first distribution of dopant atoms therein leading to said first semiconductor resistive domain being of said second conductivity type and having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said first semiconductor resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said first semiconductor resistive domain being a component part of a signal processing circuit having a signal processing circuit first input region which is electrically connected to said stress sensing circuit first output region and having a signal processing circuit output region, said signal processing circuit being capable of providing a stress transducer system output signal at said signal processing circuit output region which is a version of said stress sensing circuit first output signal but as compensated to be substantially free of effects of said temperature dependence in said stress sensing circuit characteristic; and a first operational amplifier in and on said semiconductor material in said structure adjacent to in part, and adjoining in part, said major surface, said first operational amplifier having a first input region which is capable of a high circuit impedance and having an output region which is capable of a low circuit impedance, said first operational amplifier being capable of providing a large magnitude gain in signals appearing at said first operational amplifier output region over corresponding signals appearing at said first operational amplifier first input region, said first operational amplifier being electrically connected to first and second terminal means adapted for electrical connection to first and second sources of voltage, respectively, said first operational amplifier being part of said signal processing circuit with said first semiconductor resistive domain first terminating region being electrically connected to said first operational amplifier first input region. - View Dependent Claims (53, 54, 55, 56, 57)
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58. A stress transducing system supported in and on a semiconductor material stress sensing structure having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof, with said structure having a major surface bounding semiconductor material, said semiconductor material being of a first conductivity type except in selected locations thereof, said major surface being common to both said diaphragm and said constraint, said stress transducing system comprising:
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first, second, third and fourth semiconductor piezoresistive domains each in said semiconductor material at a said selected location extending at least in part into said diaphragm, and each provided adjacent to said major surface, said first, second, third and fourth semiconductor piezoresistive domains each having first and second terminating regions, said first, second, third and fourth semiconductor piezoresistive domains each having therein substantially a first distribution of dopant atoms which leads to each of said first, second, third and fourth semiconductor piezoresistive domains being of a second conductivity type and each having a temperature coefficient of resistance of substantially a first magnitude which is effective in a first magnitude direction, said first, second, third and fourth semiconductor piezoresistive domains being component parts of a stress sensing circuit which is capable of providing a stress sensing circuit first output signal at a stress sensing circuit first output region of a magnitude varying in correspondence to changes in magnitude of stress applied to said diaphragm, said stress sensing circuit first output signal varying with such stress, as aforesaid, in a manner characteristic of said first, second, third and fourth semiconductor piezoresistive domains and remaining portions of said structure to thereby establish a stress sensing characteristic which characteristic also depends upon temperatures occurring in said structure, said first semiconductor piezoresistive domain second terminating region and said second semiconductor piezoresistive domain second terminating region being electrically connected to one another, said first semiconductor piezoresistive domain first terminating region being electrically connected to said third semiconductor piezoresistive domain first terminating region, and said second semiconductor piezoresistive domain first terminating region being electrically connected to said fourth semiconductor piezoresistive domain first terminating region; and a first primarily resistive domain adjacent to said major surface and supported by said structure, said first primarily resistive domain having first and second terminating regions, said first primarily resistive domain having a temperature coefficient of resistance of a magnitude substantially less than said first magnitude, said first primarily resistive domain being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said first primarily resistive domain being part of said stress sensing circuit with said first primarily resistive domain first terminating region being electrically connected to said first and second semiconductor piezoresistive domain second terminating regions and with said first primarily resistive domain second terminating region being electrically connected to a first terminal means adapted for electrical connection to a first source of voltage, and with said third and fourth semiconductor piezoresistive domains second terminating regions being electrically connected to a second terminal means adapted for electrical connection to a second source of voltage.
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59. A stress transducing system supported in and on a semiconductor material stress sensing structure having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof, with said structure having a major surface bounding semiconductor material, said semiconductor material being of a first conductivity type except in selected locations thereof, said major surface being common to both said diaphragm and said constraint, said stress transducing system comprising:
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first, second, third and fourth semiconductor piezoresistive domains each in said semiconductor material at a said selected location extending at least in part into said diaphragm, and each provided adjacent to said major surface, said first, second, third and fourth semiconductor piezoresistive domains each having first and second terminating regions, said first, second, third and fourth semiconductor piezoresistive domains each having therein substantially a first distribution of dopant atoms which leads to each of said first, second, third and fourth semiconductor piezoresistive domains being of a second conductivity type and each having a temperature coefficient of resistance of substantially a first magnitude which is effective in a first magnitude direction, said first, second, third and fourth semiconductor piezoresistive domains being component parts of a stress sensing circuit which is capable of providing a stress sensing circuit first output signal at a stress sensing circuit first output region of a magnitude varying in correspondence to changes in magnitude of stress applied to said diaphragm, said stress sensing circuit first output signal varying with such stress, as aforesaid, in a manner characteristic of said first, second, third and fourth semiconductor piezoresistive domains and remaining portions of said structure to thereby establish a stress sensing characteristic which characteristic also depends upon temperatures occurring in said structure, said first semiconductor piezoresistive domain second terminating region and said second semiconductor piezoresistive domain second terminating region being electrically connected to one another, said first semiconductor piezoresistive domain first terminating region being electrically connected to said third semiconductor piezoresistive domain first terminating region, and said second semiconductor piezoresistive domain first terminating region being electrically connected to said fourth semiconductor piezoresistive domain first terminating region; first and second semiconductor resistive domains each in said semiconductor material at a said selected location and adjacent to said major surface, said first semiconductor resistive domain having first and second terminating regions and said second semiconductor resistive domain having first and second terminating regions, said first and second semiconductor resistive domains each having substantially said first distribution of dopant atoms therein leading to said first and second semiconductor resistive domains each being of said second conductivity type and each having a temperature coefficient of resistance of substantially said first magnitude which is effective in said first magnitude direction, said first and second semiconductor resistive domains each being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said first and second semiconductor resistive domains being part of said stress sensing circuit with said first semiconductor resistive domain first terminating region being electrically connected to said third semiconductor piezoresistive domain second terminating region, and with said second semiconductor resistive domain first terminating region being electrically connected to said fourth semiconductor piezoresistive domain second terminating region, and with said first and second semiconductor resistive domains second terminating regions being connected to one another and to a first terminal means adapted for electrical connection to a first source of voltage, and with said first and second semiconductor piezoresistive domains second terminating regions being electrically connected to a second terminal means adapted for electrical connection to a second source of voltage; and first and second primarily resistive domains each adjacent to said major surface and supported by said structure, said first primarily resistive domain having first and second terminating regions and said second primarily resistive domain having first and second terminating regions, each of said first and second primarily resistive domains having temperature coefficients of resistance of a magnitude substantially less than said first magnitude, each of said first and second primarily resistive domains being substantially free of effects in electrical behavior in response to stresses applied to said diaphragm, said first and second primarily resistive domains being part of said stress sensing circuit with said first primarily resistive domain first terminating region being electrically connected to said first semiconductor resistive domain first terminating region, and with said first primarily resistive domain second terminating region being electrically connected to said first semiconductor resistive domain second terminating region, and with said second primarily resistive domain first terminating region being electrically connected to said second semiconductor resistive domain first terminating region, and with said second primarily resistive domain second terminating region being electrically connected to said second semiconductor resistive domain second terminating region.
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Specification