Ferroelectric or pyroelectric sensor utilizing a sodium nitrite layer

• US 4,348,611 A
• Filed: 12/05/1980
• Issued: 09/07/1982
• Est. Priority Date: 03/02/1978
• Status: Expired due to Term

• Current Assignee: Horst Vogt, Peter Wurfel, Ullrich Hetzler, Wolfgang Ruppel
• Original Assignee: Horst Vogt, Peter Wurfel, Ullrich Hetzler, Wolfgang Ruppel
• Inventors: Hetzler, Ullrich, Ruppel, Wolfgang, Vogt, Horst, Wurfel, Peter
• Primary Examiner(s): Lusignan, Michael R.
• Assistant Examiner(s): Page, Thurman K.
• Application Number:
  US06/213,649
• Time in Patent Office: 641 Days
• Field of Search: 358/113, 358/209, 358/213, 358/217, 350/338, 29/571, 29/572, 29/573, 365/65, 365/117, 365/145, 428/910, 428/913, 427/64, 427/72, 427/93, 427/100, 136/254, 250/211 R, 250/338, 250/340, 250/356, 361/282, 357/29, 357/30, 313/388
• US Class Current: 313/388
• CPC Class Codes: G01J 5/34 using capacitors, e.g. pyroelectric capacitors
• CPC Class Codes: H01J 29/458 pyroelectrical targets; targets for infrared or ultraviolet or X-ray radiations
• CPC Class Codes: H10N 15/10 Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
• CPC Class Codes: Y10S 428/91 Product with molecular orientation
• CPC Class Codes: Y10S 428/913 Material designed to be responsive to temperature, light, moisture

Abstract

A pyroelectric or ferroelectric sensing element consists of a substrate with a thin layer of sodium nitrite. Electrodes may be applied to both sides of the sodium nitrite layer, or, alternatively, only one electrode may be used. In one embodiment, an array of electrodes is applied to one side of a continuous sodium nitrite layer, while the other side has a continuous electrode. In another embodiment, the sodium nitrite layer consists of separate portions, each interposed between one electrode of an electrode array and either the substrate or a second, continuous electrode.

Claims

1. Improved ferroelectric or pyroelectric sensing element comprising

a substrate;

a crystalline sodium nitrite layer deposited on said substrate; and

at least one electrode in contact with said crystalline sodium nitrite layer.

2. A sensing element as set forth in claim 1, wherein said substrate is a semiconductor substrate having an upper surface;

wherein said at least one electrode comprises a first and second output electrode deposited on said upper surface;

wherein said layer of sodium nitrite has a lower surface covering at least a part of each of said output electrodes; and

further comprising a metallic layer deposited on said layer of sodium nitrite.

3. A sensing element as set forth in claim 1, wherein said crystalline sodium nitrite layer has a top and bottom surface;

and

wherein said at least one electrode comprises an array of electrodes deposited on at least one of said surfaces.

4. A sensing element as set forth in claim 3, wherein said at least one of said surfaces is the upper surface.

5. A sensing element as set forth in claim 1, wherein said substrate has a plurality of crystalline sodium nitrite layers deposited side by side thereon;

wherein each of said plurality of crystalline sodium nitrite layers has at least one electrode positioned on the top surface thereof; and

further comprising a second electrode interposed between said substrate and said plurality of crystalline sodium nitrite layers.

6. A sensing element as set forth in claim 1, further comprising a radiation absorption layer deposited on said sodium nitrite layer.

7. A sensing element as set forth in claim 1, further comprising a radiation absorption layer deposited on said at least one electrode.

8. A sensing element as set forth in claim 2, wherein said sensing element constitutes a field effect transistor, said output electrodes constituting source and drain electrodes;

wherein changes in temperature cause changes in spontaneous polarization of said sodium nitrite layer, thereby changing the resistance between said source and drain electrodes; and

wherein said changes in temperature are created by changes due to the presence of radiation.

9. A sensing element as set forth in claim 1, wherein said crystalline sodium nitrite layer has a thickness in the order of several microns.

10. A sensing element as set forth in claim 1, wherein said crystalline sodium nitrite layer has a thickness in the order of about 1 to 25 microns.

11. A sensing element as set forth in claim 1, wherein said sodium nitrite layer has a thickness in the range of 1 to 10 microns.

12. A sensing element as set forth in claim 1, wherein said at least one electrode is interposed between said crystalline sodium nitrite layer and said substrate;

further comprising a resistive layer covering said crystalline sodium nitrite layer, and a first and second calibrating electrode on said resistive layer, whereby said sensing element is calibrated by measurement of the signal generated between said resistive layer and said at least one electrode in response to a known amount of electrical energy applied to said resistive layer through said first and second calibrating electrodes.

13. A sensing element as set forth in claim 1, wherein said crystalline sodium nitrite layer has a top surface and a bottom surface;

wherein said at least one electrode comprises a first array of stripe electrodes arranged substantially parallel to each other in contact with said top surface and a second array of stripe electrodes arranged substantially parallel to each other and at a predetermined angle to said first array in contact with said bottom surface, so that each of said stripe electrodes of said second array intersect at least one of said stripe electrodes of said first array, whereby measurement of an electrical signal between a selected one of said electrodes of said first array and an intersecting one of said electrodes of said second array is indicative of radiation incident at the location of said intersection.

14. A sensing element as set forth in claim 13 wherein said predetermined angle is an angle of 90°

.

19. A sensing element as set forth in claim 1, wherein the ferroelectric domains of said sodium nitrite layer are pre-oriented by poling the layer in an electric field in the order of 10³ -10⁵ V/cm applied perpendicularly to the layer at a temperature in the range between 80°

and 160°

C.

15. Apparatus for creating a signal at an output electrode in response to a change in energy received by said apparatus, comprising, in combination a substrate;

a thin crystalline layer of sodium nitrite deposited on said substrate, said substrate with said layer of sodium nitrite constituting a sensing element subject to polarization changes in response to predetermined changes of energy applied thereto; and

means for creating said signal at said output electrode in response to said polarization changes in said sensing elements.

16. Apparatus as set forth in claim 15 wherein said apparatus is a television camera tube having means for focusing the image of an object being photographed onto a predetermined image plane and having scanning means for scanning said image plane and creating a television signal corresponding to the charge distribution thereon;

wherein said ferroelectric body is mounted in said image plane; and

wherein said means for creating said signal at said output electrode comprises said scanning means of said television camera tube.

17. Radiation detector, comprising, in combination, a substrate;

a crystalline sodium nitrite layer, having a first and second electrode respectively positioned on top and bottom surface thereof, deposited on said substrate;

an air tight housing having a window transparent to a predetermined part of the electromagnetic radiation spectrum;

mounting means for mounting said substrate with said sodium nitrite layer deposited thereon behind said window within said housing; and

a third and fourth electrode in electrical contact, respectively, with said first and second electrode, and extending through said housing, whereby radiation within said predetermined part of said spectrum received through said window heats said sodium nitrite layer thereby changing its spontaneous polarization and creating a charge at said third and fourth electrode.

18. Apparatus as set forth in claim 17 further comprising a radiation absorption layer deposited on said first electrode and positioned relative to said window to receive said radiation, whereby radiation passing through said window is absorbed by said absorption layer thereby heating said sodium nitrite layer.