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Method of forming a mesa in a semiconductor device with subsequent separation into individual devices

  • US 4,355,457 A
  • Filed: 10/29/1980
  • Issued: 10/26/1982
  • Est. Priority Date: 10/29/1980
  • Status: Expired due to Term
First Claim
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1. A method of forming a mesa in a semiconductor device, said method comprising:

  • forming a plurality of semiconductor devices each having at least one PN junction on a wafer;

    mechanically cutting a first set of relatively wide generally U-shaped channels extending in a first direction on opposite sides of each of said devices and cutting a second set of relatively wide generally U-shaped channels extending in a second direction generally perpendicular to the first direction on opposite other sides of each of said devices, said channels having a bottom generally planar surface located below said PN junction and a pair of generally planar mesa walls at which said junctions terminate;

    etching said channels for a short time in a dilute etchant to smooth the channel surfaces and to provide a slight arcuate contour to each said mesa wall; and

    ,separating said devices from each other by breaking the wafer along the midline of said channels.

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