Method of forming a mesa in a semiconductor device with subsequent separation into individual devices
First Claim
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1. A method of forming a mesa in a semiconductor device, said method comprising:
- forming a plurality of semiconductor devices each having at least one PN junction on a wafer;
mechanically cutting a first set of relatively wide generally U-shaped channels extending in a first direction on opposite sides of each of said devices and cutting a second set of relatively wide generally U-shaped channels extending in a second direction generally perpendicular to the first direction on opposite other sides of each of said devices, said channels having a bottom generally planar surface located below said PN junction and a pair of generally planar mesa walls at which said junctions terminate;
etching said channels for a short time in a dilute etchant to smooth the channel surfaces and to provide a slight arcuate contour to each said mesa wall; and
,separating said devices from each other by breaking the wafer along the midline of said channels.
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Abstract
A method of forming a mesa in a semiconductor device comprises forming a plurality of such devices on a wafer, mechanically cutting relatively wide channels to a predetermined depth in said wafer at positions around individual ones of the devices to partially separate the devices from each other. The mechanical cutting technique defines mesa walls and plain surfaces between individual devices. These channels are then etched to repair scars caused by the cutting technique and, thereafter, the wafer is broken along the center line of the channels to separate the devices from each other.
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Citations
6 Claims
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1. A method of forming a mesa in a semiconductor device, said method comprising:
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forming a plurality of semiconductor devices each having at least one PN junction on a wafer; mechanically cutting a first set of relatively wide generally U-shaped channels extending in a first direction on opposite sides of each of said devices and cutting a second set of relatively wide generally U-shaped channels extending in a second direction generally perpendicular to the first direction on opposite other sides of each of said devices, said channels having a bottom generally planar surface located below said PN junction and a pair of generally planar mesa walls at which said junctions terminate; etching said channels for a short time in a dilute etchant to smooth the channel surfaces and to provide a slight arcuate contour to each said mesa wall; and
,separating said devices from each other by breaking the wafer along the midline of said channels. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification