Apparatus for measuring electrical or magnetic fields by absorption spectrum change

• US 4,356,448 A
• Filed: 05/23/1980
• Issued: 10/26/1982
• Est. Priority Date: 05/31/1979
• Status: Expired due to Term

• Current Assignee: Asea Aktiebolag (ABB Limited)
• Original Assignee: Asea Aktiebolag (ABB Limited)
• Inventors: Brogardh, Torgny, Engstrom, Olof
• Primary Examiner(s): Evans, F. L.
• Application Number:
  US06/152,724
• Time in Patent Office: 886 Days
• Field of Search: 324/96, 324/244, 324/252, 324/260, 250/231 R, 350/355
• US Class Current: 324/244.1
• CPC Class Codes: G01R 15/24 using light-modulating devices
• CPC Class Codes: G01R 23/17 with optical or acoustical auxiliary devices
• CPC Class Codes: G01R 29/0885 using optical probes, e.g. electro-optical, luminescent, glow discharge, or optical interferometers
• CPC Class Codes: G01R 33/0322 using the Faraday or Voigt effect
• CPC Class Codes: G02F 1/091 based on magneto-absorption or magneto-reflection
• CPC Class Codes: G02F 1/174 based on absorption band-shift, e.g. Stark - or Franz-Keldysh effect G02F1/015, G02F1/178 take precedence

Abstract

A fiber optical measuring device for measuring a magnetic or electric field comprises an optical modulator influenced by the field. The optical properties of the modulator are dependent on the magnetic or electric field acting on the modulator. The optical property which is made use of is the field dependence of at least one absorption edge of the radiation absorption spectrum of the modulator material. Optical fibers may be used for feeding light into the modulator and for leading away light that has passed through the modulator.

Claims

1. An optical measuring device for measuring magnetic fields, comprising:

at least one radiation modulator consisting of a material having spectral properties dependent on said field;

means for measuring said spectral properties by radiation in a given wavelength range passing through said modulator, said modulator, in said given wavelength range, having at least one absorption edge in the absorption sprectrum of said material being modified by application of said field, said field dependence being caused by changes in the Landau levels in a magnetic field;

at least one optical fiber for conducting light to and from the modulator; and

said material having a specific resistivity at least as great as that of a semiconductor material.

3. A measuring device according to claim 1 or 2, including at least one source of light having an emission spectrum, in which the application of the field causes a displacement in an absorption edge of said material, said absorption edge occurring within the emission spectrum of the light from the said one source.

4. A measuring device according to claim 3, in which the material in the modulator includes a plurality of different materials to obtain a desired shape for the absorption edge of the material.

5. A measuring device according to claim 1 or 2, in which said means for measuring the absorption properties of said modulator measures the light absorption of said material in at least two different wavelength ranges, one wavelength range at least partially coinciding with the wavelength range of said one absorption edge of the material.

6. A measuring device according to claim 5, wherein said means for measuring includes a number of light-emitting devices, each light emitting device having different emission spectra.

7. A measuring device according to claim 5, wherein said means for measuring include at least two light-emitting devices, each provided with an optical fiber.

8. A measuring device according to claim 1 or 2, wherein said measuring device comprises at least one light source, at least one detector and at least two modulators, one of said modulators being influenced by the field to be measured, and another one of said modulators being influenced differently by the field to be measured and by the temperature, and means for compensating for the effect of the temperature on the modulators by a suitable processing of signals received from the two modulators.

9. A measuring device according to claim 8, further comprising means for measuring the light transmission in each of said at least two modulators in at least one wavelength range, and means for determining the difference of the transmission values measured.

10. A measuring device according to claim 8, in which means for measuring the light transmission in each of said modulators in at least one wavelength range is provided together with means for controlling at least one light source and/or at least one light detector to obtain said compensation.

11. A measuring device according to claim 1 or 2, further comprising a light source generating two components with different light spectra, the light spectrum for one component at least partially coinciding with an absorption edge of said modulator influenced by the field to be measured, and the light spectrum for the second component lying in a wavelength range in which the absorption edge for the measuring modulator is less influenced by the field to be measured.

12. A measuring device according to claim 11, in which said light source is temperature-stabilized.

13. A measuring device according to claim 1 or 2, in which a field concentrator is arranged adjacent to the modulator material for increasing the field strength in the material.

14. A measuring device according to claim 1, further comprising a magnetic circuit which includes an air gap of variable size and said modulator material is positioned in said magnetic circuit.

15. A measuring device according to claim 12, in which each light source, each light detector and each modulator included in the measuring device consists of a semiconductor selected from the group consisting of Ge, GaAs, GaP and AlAs.

17. A measuring device as in claim 1 or 2 in which said modulator material is polymeric.

18. A measuring device according to claim 1 or 2 in which said modulator material is polycrystalline or crystalline.

19. A measuring device as in claim 1 or 2 in which said modulator material is amorphous.

20. A measuring device according to claim 8 further comprising means for measuring the light transmission in each of said at least two modulators in at least one wavelength range, and means for determining the sum of the transmission values measured.

21. A measuring device according to claim 8 further comprising means for measuring the light transmission in each of said at least two modulators in at least one wavelength range, and means for determining the quotient between the transmission values measured.

22. A measuring device according to claim 8 wherein said at least two modulators are time-multiplexed with a constant ratio of light relative to the light modulated by said at least two modulators and further comprising light detectors responsive to the output of said at least two modulators so as to determine the difference between the signal outputs of the said at least two modulators to compensate for the effect of temperature on said at least two modulators.

23. A measuring device according to claim 8 wherein said at least two modulators are frequency-multiplexed with a constant ratio of light relative to the light modulated by said at least two modulators and further comprising light detectors responsive to the output of said at least two modulators so as to determine the difference between the signal outputs of the said at least two modulators to compensate for the effect of temperature on said at least two modulators.

24. A measuring device according to claim 5 wherein said means for measuring includes a wavelength-modulated laser for emitting light having at least two different emission spectra.

25. A measuring device according to claim 5 wherein said means for measuring includes a semiconductor laser alternately operated as a light-emitting diode and a laser.

2. An optical measuring device for measuring electrical fields, comprising:

at least one radiation modulator consisting of a material having spectral properties dependent on said field;

means for measuring said spectral properties by radiation in a given wavelength range passing through said modulator, said modulator, in said given wavelength range, having at least one absorption edge in the absorption spectrum of said material being modified by application of said field, said field dependence being caused by changes in the Franz-Keldysh effect of an electric field;

at least one optical fiber for conducting light to and from the modulator; and

said material having a specific resistivity at least as great as that of a semiconductor material.

16. A measuring device according to claim 2, in which the electric field is arranged to be applied across a PN-junction and the depletion region formed is used as the modulator.