Memory redundancy apparatus for single chip memories
First Claim
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1. In a memory which includes first lines selected by first address signals and second lines selected by second address signals, an improved redundancy apparatus comprising:
- a plurality of redundant first lines;
programmable decoder means for selecting said redundant first lines upon receipt of predetermined ones of said first address signals, said selection means being programmed to recognize said predetermined first address signals;
selection means coupled to receive at least a portion of said second address signals for selection of said programmable means during said programming and for disabling programming of said decoder means upon receipt of certain signals;
whereby said memory is programmed to use said redundant lines, and then programmed to prevent inadvertent programming.
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Abstract
An improved addressing means for single chip memories which include a plurality of redundant lines and associated cells is described. Y address signals are used during programming to select and program redundant X decoders. The redundancy apparatus is implemented without any additional package pins and programming may be performed after packaging. The apparatus includes means for permanently disabling all further programming of the redundancy circuitry to prevent inadvertent programming by a user.
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Citations
11 Claims
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1. In a memory which includes first lines selected by first address signals and second lines selected by second address signals, an improved redundancy apparatus comprising:
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a plurality of redundant first lines; programmable decoder means for selecting said redundant first lines upon receipt of predetermined ones of said first address signals, said selection means being programmed to recognize said predetermined first address signals; selection means coupled to receive at least a portion of said second address signals for selection of said programmable means during said programming and for disabling programming of said decoder means upon receipt of certain signals; whereby said memory is programmed to use said redundant lines, and then programmed to prevent inadvertent programming. - View Dependent Claims (2, 3, 4, 5, 6)
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7. In a memory which includes a plurality of array decoders coupled to receive first address signals and a plurality of array lines selected by said array decoders, an improved redundancy apparatus comprising:
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a plurality of redundant lines; a plurality of redundant decoders for selecting said redundant lines, said redundant decoders coupled to said array decoders so as to prevent selection of said array lines upon selection of one of said redundant lines; programmable gating means coupled to receive said first address signals, for programming to provide predetermined first address signals to said redundant decoders; selection means coupled to receive second address signals for selecting said gating means during said programming of said gating means; and repair inhibit means for preventing said programming of said gating means, said repair inhibit means coupled to receive said second address signals and being activated by predetermined second address signals; whereby said memory may be programmed to replace faulty lines with said redundant lines and then inhibited from inadvertent programming. - View Dependent Claims (8, 9, 10, 11)
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Specification