Charge-transfer switched-capacity filter

• US 4,365,217 A
• Filed: 11/24/1980
• Issued: 12/21/1982
• Est. Priority Date: 11/30/1979
• Status: Expired due to Term

• Current Assignee: Thomson-CSF
• Original Assignee: Thomson-CSF
• Inventors: Berger, Jean L., Coutures, Jean L.
• Primary Examiner(s): Nussbaum, Marvin L.
• Application Number:
  US06/210,141
• Time in Patent Office: 757 Days
• Field of Search: 333/165, 333/173, 328/167, 307/221 D
• US Class Current: 333/165
• CPC Class Codes: H03H 15/02 using analogue shift registers
• CPC Class Codes: H03H 19/004 Switched capacitor networks

Abstract

A switched capacity filter having capacities formed by MOS technology on a semiconductor substrate. The connection between two capacities whose first plates are formed by the semiconductor substrate are periodically connected by providing transfer of charges in the substrate on which these two capacities are integrated. The external or other plate of each capacity receives, the input voltage, or a reference voltage, or the surface potential under another capacity which is provided by a reinjection and reading device formed from a diode and a voltage follower stage.

Claims

1. A charge-transfer switched-capacity filter, comprising an amplifier associated with a network of resistances and capacities in which each resistance is formed by two MOS switches in series and with a capacity between the common point of these switches and ground;

said capacities are formed by MOS technology and said MOS switches are formed by control electrodes adjacent the MOS capacities and from which they are separated by an oxide layer;

one plate of each capacity being formed by the semiconductor substrate on which it is integrated, and connection between two capacities whose plates are formed by the substrate are periodically connected by transfer of charges in the semiconductor substrate on which said two capacities are integrated, and results in the establishment of the same surface potential under said two capacities;

the other external to the substrate plate of at least one of the capacities receiving input voltage of the filter, and of at least another of the capacities receiving a DC voltage taken for reference.

2. A filter according to claim 1 further comprising a reinjection and reading device between one external plate of a capacity termed a reading capacity, and the plate formed by the substrate of another capacity for reading the surface potential under said other capacity.

3. The filter as claimed in claim 2, wherein said reinjection and reading device is formed by a voltage-follower stage whose input is connected to a diode formed in the semiconductor substrate on which a capacity is integrated and whose output is connected to the external plate of another capacity.

4. The filter as claimed in claim 3, wherein said voltage-follower stage is formed by two MOS transistors in series between a supply voltage and ground, one of said transistors being an enrichment mode, and the other a depletion mode, and both having a control electrode, the input of the stage taking place on the control electrode of the MOS enrichment transistor connected to the supply voltage and the output of the stage taking place on the electrode common to the two transistors, whereas the control electrode of the depletion MOS transistor connected to ground is also connected to ground.

5. The filter as claimed in claim 2, wherein the reinjection and reading device comprises:

an MOS reading capacity integrated on the substrate following the capacity whose surface potential is to be read, an MOS switch ensuring the connection between these two capacities;

an MOS transistor connected between the external plate of the capacity to be read and ground, this transistor being enabled while the switch allows the transfer of the charges from the capacity to be read to the reading capacity;

a stage, connected to the external plate of the reading capacity ensuring the maintenance of a constant potential on the external plate of the reading capacity during transfer of the charges under this capacity, this stage being connected, directly or through said amplifier, to the external plate of another capacity.

6. The filter as claimed in claim 5, wherein said stage is formed by an MOS transistor operating under saturation connected between the external plate of the reading capacity and a predetermined point and by a capacity between said point and ground, this capacity being periodically charged before the arrival of the charges under the reading capacity and discharged by the arrival of the charges under the reading capacity.

7. The filter as claimed in claim 6, wherein an MOS transistor connected between the external plate of the reading capacity and ground ensures periodically the return of the charges from the reading capacity to the capacity to be read and wherein an MOS transistor connected between said point and a supply voltage ensures periodically the charging of the capacity connected to said point.

8. The filter as claimed in claim 7, wherein a continuous-level translator stage is connected to said point and translates the continuous level of the signal obtained at said point from v_AO, which is the voltage at the terminals of the capacity connected to said point before the arrival of the charges under the reading capacity, to V_G, which is the DC voltage taken for reference.

9. The filter as claimed in claim 8, whose electrical diagram is formed by two capacities C₁ and C₂ in series with the input of the amplifier, a resistor between the input of the amplifier and ground and a looping resistor formed from two switches and a capacity C₄ between the output of the amplifier and the point common to capacities C₁ and C₂, wherein the plate formed by the substrate of capacity C₁ is connected according to the electrical diagram to the external plate of capacity C₂, and wherein a reinjection and reading device is connected between the plate formed by the substrate of C₁ and the external plate of C₂.

10. The filter as claimed in claim 9, wherein the plate formed by the substrate of C₂ is connected, according to the electrical diagram, through the amplifier and a switch to the plate formed by the substrate of C₄ and wherein a reinjection and reading device is connected between the plate formed by the substrate of capacity C₂ and the amplifier, the amplifier being connected to a charge-injection diode integrated in the same substrate and downstream in the charge-transfer direction of capacity C₄ from which it is separated by a switch.

11. The filter as claimed in claim 8, whose electrical diagram is formed from two resistors in series with the input of the amplifier, a capacity C₅ between the input of the amplifier and ground and a looping capacity C₆ between the output of the amplifier and the point common to the two resistors, wherein the plate formed by the substrate of capacity C₅ is connected, in the electrical diagram, through the amplifier to the external plate of capacity C₆ and wherein a reinjection and reading device is connected between the plate formed by the substrate of C₅ and the input of the amplifier which is connected to the external plate of capacity C₆.