Situ rate and depth monitor for silicon etching

• US 4,367,044 A
• Filed: 12/31/1980
• Issued: 01/04/1983
• Est. Priority Date: 12/31/1980
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Wasik, Chester A., Booth, Robert M. Jr.
• Primary Examiner(s): ROSENBERGER, RICHARD A
• Application Number:
  US06/221,868
• Time in Patent Office: 734 Days
• Field of Search: 356/355, 356/356, 356/357, 356/376, 356/378, 356/381, 356/382, 356/243, 204/192 E, 204/298, 156/626
• US Class Current: 356/504
• CPC Class Codes: G01B 11/0675 using interferometry

Abstract

An in situ thickness change monitor for determining thickness change in opaque product material, such as silicon, in chamber apparatus, such as reactive ion etching apparatus, operative to produce such thickness change. Reference material having thickness change properties, such as etch-rate, correlatable to the product material thickness change properties is deposited upon a substrate having an index of refraction such as to form a monitor exhibiting an optical discontinuity. With the monitor positioned within the chamber with the product material, light directed thereto acts to provide reflected beams producing light having an intensity variation due to interference indicative of the thickness of the reference material. Changes in the thickness of the reference material are correlated to changes in thickness of the product material.

Claims

1. A process for monitoring changes in thickness of a layer of product material in an environment arranged to produce such changes, comprising the steps of;

selecting a reference material which exhibits thickness changing characteristics in said environment correlatable to those of the product material in said environment;

depositing said reference material on a substrate therefor to form a monitor device that exhibits an optical discontinuity between said reference material and substrate;

positioning said monitor device in the said environment with said product material so that said reference material and product material undergo changes in thickness; and

directing light to said monitor device so as to obtain reflected light therefrom to monitor the thickness of said reference material, whereby changes in thickness of said reference material may be correlated to changes in thickness of said product material.

2. The process as set forth in claim 1 wherein said environment is an etching environment.

3. The process as set forth in claim 2 wherein said product material is silicon.

4. The process as set forth in claim 3 wherein said reference material is polysilicon.

5. The process as set forth in claim 4 wherein said substrate is SiO₂.

6. The process as set forth in claim 5 wherein said etching environment is a reactive ion etching environment.

7. The process as set forth in claim 6 wherein said silicon product material has deposited thereon at least one additional layer of material.

8. The process as set forth in claim 7 wherein light is directed to said product material having at least one additional layer of material thereon so as to obtain reflected light therefrom which may be used to determine the point at which said silicon begins to etch after said additional layer has been etched.

9. The process as set forth in claim 8 wherein a single source of light is used for directing light to both said reference material and said product material.

10. The process as set forth in claim 9 wherein said single source of light is a laser source.

11. The process as set forth in claim 10 wherein said laser source is a He Ne laser source and one cycle of the interference signal derived from the said reflected light from said monitor is indicative of approximately 80 nm of etching of said silicon.

12. A process for monitoring changes in thickness of a layer of product material being etched in an etching chamber comprising;

selecting a reference material which exhibits etch rate characteristics correlatable to those of said product material;

depositing said reference material on a substrate so that an optical discontinuity exists between said reference material and substrate;

positioning said reference material on said substrate in said etching chamber with said product material;

directing light to said reference material in said etching chamber to obtain reflected light therefrom which may be used to determine the thickness of said reference material; and

using said reflected light to determine the thickness of said reference material such that changes in thickness of said reference material may be correlated to changes in thickness of said product material.

13. The process as set forth in claim 12 wherein said product material is silicon and said reference material is polysilicon.

14. The process as set forth in claim 13 wherein said substrate is a layer of silicon having a silicon dioxide layer thereon.

15. The process as set forth in claim 14 wherein said etching chamber is a reactive ion etching chamber.

16. The process as set forth in claim 15 wherein light is directed to said product material to obtain reflected light therefrom.

17. The process as set forth in claim 16 wherein said light is obtained from a HeNe laser source.

18. Apparatus for the in situ monitoring of changes in thickness of product material in a chamber arranged to produce changes in thickness of said product material, comprising;

monitor means positioned within said chamber with said monitor means including a layer of reference material exhibiting thickness changing properties within said chamber correlatable to the thickness changing properties of said product material,

said monitor means further including substrate means for said reference material arranged so that an optical discontinuity exists between said reference material and substrate means;

light source means for directing light to

said monitor means so that said monitor means produces reflected light from both said reference material and substrate means; and

detector means to change said reflected light to a signal having a period indicative of the thickness of said reference material and correlatable to the thickness of said product material.

19. The apparatus as set forth in claim 18 wherein said product material is silicon, said reference material is polysilicon and said substrate means includes SiO₂.

20. The apparatus as set forth in claim 19 wherein light is directed to both said product material and monitor means.

21. The apparatus as set forth in claim 20 wherein said light eminates from a HeNe laser light source.

22. The apparatus as set forth in claim 21 wherein

said chamber is a reactive ion etching chamber.