High speed plasma etching system

• US 4,367,114 A
• Filed: 05/06/1981
• Issued: 01/04/1983
• Est. Priority Date: 05/06/1981
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Perkinelmer Incorporated
• Inventors: Reinberg, Alan R., Steinberg, George N., Dalle Ave, Jean
• Primary Examiner(s): Massie, Jerome W.
• Application Number:
  US06/260,668
• Time in Patent Office: 608 Days
• Field of Search: 156/345, 156/643, 204/192 E, 204/298, 222/3, 219/121 PD, 219/121 PG, 239/145
• US Class Current: 156/345.34
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01J 37/32633 Baffles

Abstract

This invention relates to a plasma etching system, which includes a lower flange and a spaced upper flange; a chamber wall mounted between the flanges to form a closed etching chamber; a grounded wafer support plate disposed in said chamber for receiving thereon a wafer to be processed; an electrical insulating element interposed between the chamber wall and the support plate; a sintered or sintered-like porous electrode plate mounted in the chamber in spaced relationship with respect to the wafer; said plate having a gas inlet for receiving a supply of etching gas; circuitry for applying an excitation voltage to this plate, and said chamber having a gas outlet leading to a vacuum source.

Claims

1. A plasma etching system comprising a lower flange and a spaced upper flange;

a chamber wall mounted between said flanges to form a closed etching chamber;

a wafer support plate disposed in said chamber for receiving thereon a wafer to be processed;

means for electrically grounding said wafer support plate;

means for clamping the wafer firmly to the wafer support plate to enhance electrical coupling of the wafer to ground;

electrical insulating spacer means interposed between said chamber wall and said support plate;

a sintered or sintered-like porous electrode plate, means for mounting said electrode plate in the chamber in spaced relationship with respect to the wafer;

said plate having gas inlet means for receiving a supply of etching gas;

means for applying an excitation operating voltage to said electrode plate; and

said chamber having a gas outlet leading to a vacuum source for discharging gas and etching products.

2. A plasma etching system according to claim 1 wherein said means for mounting said electrode plate in the chamber comprises an electrically insulating support ring interposed between said electrode plate and said chamber wall.

3. A plasma etching system according to claim 1 wherein said electrode plate is fabricated of sintered fine particles for omnidirectional effusion of the gas therefrom.

4. A plasma etching system according to claim 3 wherein the pore size of the electrode plate is of the order of about 0.5 microns.

5. A plasma etching system according to claim 3 wherein said electrode plate is fabricated from stainless steel.

6. A plasma etching system according to claim 3 wherein said electrode plate is fabricated from porous graphite.

7. A plasma etching system according to claim 3 wherein said electrode plate is fabricated from porous sintered quartz.

8. A plasma etching system comprising a lower flange and a spaced upper flange;

a chamber wall mounted between said flanges to form a closed etching chamber;

a wafer support plate disposed in said chamber for receiving thereon a wafer to be processed;

means for electrically grounding said wafer support plate;

electrical insulating spacer means interposed between said chamber wall and said support plate;

a sintered or sintered-line porous electrode plate, means for mounting said electrode plate in the chamber in spaced relationship with respect to the wafer;

said plate having gas inlet means for receiving a supply of etching gas;

means for applying an excitation operating voltage to said electrode plate;

a plurality of spring loaded pins interposed between said elctrode plate and said wafer to resiliently clamp the wafer to the wafer support plate to enhance electrical coupling of the wafer to ground; and

said chamber having a gas outlet leading to a vacuum source for discharing gas and etching products.

9. A plasma etching system according to claim 8 wherein said means for mounting said electrode plate in the chamber comprises an electrically insulating support ring interposed between said electrode plate and said chamber wall.

10. A plasma etching system according to claim 8 wherein said electrode plate is fabricated of sintered fine particles for omnidirectional effusion of the gas therefrom.

11. A plasma etching system according to claim 10 wherein the pore size of the electrode plate is of the order of about 0.5 microns.

12. A plasma etching system according to claim 10 wherein said electrode plate is fabricated from stainless steel.

13. A plasma etching system according to claim 10 wherein said electrode plate is fabricated from porous graphite.

14. A plasma etching system according to claim 10 wherein said electrode plate is fabricated from porous sintered quartz.

15. A plasma etching system comprising a lower flange and a spaced upper flange;

a chamber wall mounted between said flanges to form a closed etching chamber;

a wafer support plate disposed in said chamber for receiving thereon a wafer to be processed;

means for electrically grounding wafer support plate;

electrical insulating spacer means interposed between said chamber wall and said support plate;

a sintered or sintered-like porous electrode plate, means for mounting said electrode plate in the chamber in spaced relationship with respect to the wafer;

said plate having gas inlet means for receiving a supply of etching gas;

means for applying and excitation operating voltage to said electrode plate;

a resilient mounting ring interposed between said electrode plate and said wafer to resiliently clamp the wafer to the wafer support plate to enhance electrical coupling of the wafer to ground; and

said chamber having a gas outlet leading to a vacuum source for discharging gas and etching products.

16. A plasma etching system according to claim 15 wherein said means for mounting said electrode plate in the chamber comprises an electrically insulating support ring interposed between said electrode plate and said chamber wall.

17. A plasma etching system according to claim 15 wherein said electrode plate is fabricated of sintered fine particles for omnidirectional effusion of the gas therefrom.

18. A plasma etching system according to claim 17 wherein the pore size of the electrode plate is of the order of about 0.5 microns.

19. A plasma etching system according to claim 17 wherein said electrode plate is fabricated from stainless steel.

20. A plasma etching system according to claim 17 wherein said electrode plate is fabricated from porous graphite.

21. A plasma etching system according to claim 17 rein said electrode plate is fabricated from porous sintered quartz.

22. A plasma etching system comprising a lower flange and a spaced upper flange;

a chamber wall mounted between said flanges to form a closed etching chamber;

a wafer support plate disposed in said chamber for receiving thereon a wafer to be processed;

means for electrically grounding said wafer support plate;

electrical insulating spacer means interposed between said chamber wall and said support plate;

a sintered or sintered-like porous electrode plate, means for mounting said electrode plate in the chamber in spaced relationship with respect to the wafer;

said plate having gas inlet means for receiving a supply of etching gas;

means for applying an excitation operating voltage to said electrode plate;

means for clamping the wafer firmly to the wafer support plate to enhance the electrical coupling of the wafer to ground, and wherein the frequency of said excitation operating voltage is in the range from about 100 KH_z to about 1 KH_z ; and

said chamber having a gas outlet leading to a vacuum source for discharing gas and etching products.

23. A plasma etching according to claim 22 wherein said means for mounting said electrode plate in the chamber comprises an electrically insulating support ring interposed between said electrode plate and said chamber wall.

24. A plasma etching system according to claim 22 wherein said electrode plate is fabricated of sintered fine particles for omnidirectional effusion of the gas therefrom.

25. A plasma etching system according to claim 23 wherein the pore size of the electrode plate is of the order of about 0.5 microns.

26. A plasma etching system according to claim 23 wherein said electrode plate is fabricated from stainless steel.

27. A plasma etching system according to claim 23 wherein said electrode plate is fabricated from porous graphite.

28. A plasma etching system according to claim 23 wherein said electrode plate is fabricated from porous sintered quartz.