Implantation of electrical feed-through conductors

• US 4,368,106 A
• Filed: 07/21/1981
• Issued: 01/11/1983
• Est. Priority Date: 10/27/1980
• Status: Expired due to Fees

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Anthony, Thomas R.
• Primary Examiner(s): Tufariello, T.
• Application Number:
  US06/285,656
• Time in Patent Office: 539 Days
• Field of Search: 204/15, 204/24, 204/26, 204/273, 204/277, 204/52 R
• US Class Current: 205/123
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 23/5384 Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors H01L23/5383, H01L23/5385 take precedence; pins attached to insulating substrates H01L23/49811
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 1/0306 Inorganic insulating substrates, e.g. ceramic, glass
• CPC Class Codes: H05K 2201/0355 Metal foils
• CPC Class Codes: H05K 2201/09563 Metal filled via plated through-hole filled with insulating material H05K2201/0959
• CPC Class Codes: H05K 2203/1492 Periodical treatments, e.g. pulse plating of through-holes
• CPC Class Codes: H05K 3/423 characterised by electroplating method
• CPC Class Codes: H05K 3/427 initial plating of through-holes in metal-clad substrates

Abstract

Electrically conductive solid, dense feed-through paths for the high-speed low-loss transfer of electrical signals between integrated circuits of a single silicon-on-sapphire body, or between integrated circuits of several silicon-on-sapphire bodies, are provided by an electroforming method.

Claims

1. A process for implanting solid, dense, metallic feed-through conductors comprising the steps of:

(a) providing a body, said body having top and bottom major opposed surfaces substantially parallel to each other, an outer peripheral edge area interconnecting said major surfaces, and a plurality of holes therethrough, one of said major surfaces being overlaid by at least a thin film of a conducting metal, said metal being one selected from the group consisting of gold, copper, nickel, chromium, and mixtures and alloys thereof;

(b) positioning said body in a tank parallel to an anode such that said thin film on said major surface faces away from said anode and a space is formed between said body and said anode, the metal of said anode being the same as the metal of said solid, dense, metallic feed-through conductors to be implanted;

(c) surrounding said body and said anode with an electroforming solution, said electroforming solution having therein at least the metal of said solid, dense, metallic feed-through conductors to be implanted;

(d) initiating a flow of bubbles of an inert gas in said space between said body and said anode;

(e) establishing a flow of direct current through said solution, between said anode and said thin film;

(f) forming a solid film bridge of metal across the bottoms of said holes; and

(g) growing solid, dense, metallic implants in said holes from said solid film bridge at the bottoms of said holes to the tops of said holes.

2. The process of claim 1 wherein said body is composed of a single material, said single material being one selected from the group consisting of silicon, germanium, gallium arsenide, gallium phosphide, indium antimonide, cadmium telluride, and zinc sulfide.

3. The process of claim 1 wherein said body is a composite, said body having a single crystal sapphire substrate and a contiguous overlying epitaxially-grown layer of single crystal silicon, said top major surface being the exposed surface of said silicon layer, said bottom major surface being the exposed surface of said sapphire substrate and said outer peripheral edge area encompassing both said sapphire substrate and said layer of silicon.

4. The process of claim 1 wherein the density of said implants is greater than about 95% of theoretical.

5. The process of claim 1 wherein said tank is capable of sustaining a vacuum.

6. The process of claim 1 wherein said step of establishing a flow of direct current comprises establishing a flow of direct current equal to about one milliampere per hole.

7. The process of claim 5 further including the steps of establishing a vacuum in said tank prior to said surrounding step and, after conducting said surrounding step, maintaining said vacuum in said chamber for a period of time sufficient for said solution to completely fill said plurality of holes and, thereafter, returning said tank to atmospheric pressure.

8. The process of claim 7 wherein said step of establishing a vacuum comprises establishing a vacuum of at least about 1 Torr.

9. The process of claim 1 further including the steps of continuing said flow of direct current until said feed-through conductors have emerged from said holes and simultaneously growing the emerged feed-through conductors away from said top and bottom surfaces and parallel to said top and bottom surfaces forming thereby substantially equally-sized rivet-like terminations on both sides of said body.

10. A process for implanting solid, dense, copper feed-through conductors comprising the steps of:

(a) providing a body, said body having top and bottom major opposed surfaces substantially parallel to each other, an outer peripheral edge area interconnecting said major surfaces, and a plurality of holes therethrough, one of said major surfaces being overlaid by at least a thin film of a conducting metal, said metal being one selected from the group consisting of gold, copper, nickel, chromium, and mixtures and alloys thereof;

(b) positioning said body in a tank parallel to an anode such that said thin film on said major surface faces away from said anode and a space is formed between said body and said anode, the metal of said anode being copper;

(c) surrounding said body and said anode with an electroforming solution, said solution being an aqueous solution consisting essentially, in grams per liter, of from about 220 to about 270 grams of hydrated copper sulfate, from about 5 to about 28 grams of sulphuric acid, from about 0.007 to about 0.013 grams of thiourea, and from about 0.03 to about 1.0 gram of molasses;

(d) initiating a flow of bubbles of an inert gas in said space between said body and said anode;

(e) establishing a flow of direct current through said solution, between said anode and said thin film;

(f) forming a solid film bridge of copper across the bottoms of said holes; and

(g) growing solid, dense, copper implants in said holes from said solid film bridge at the bottoms of said holes to the tops of said holes.

11. The process of claim 10 wherein said body is composed of a single material, said single material being one selected from the group consisting of silicon, germanium, gallium arsenide, gallium phosphide, indium antimonide, cadmium telluride, and zinc sulfide.

12. The process of claim 10 wherein said body is a composite, said body having a single crystal sapphire substrate and a contiguous overlying epitaxially-grown layer of single crystal silicon, said top major surface being the exposed surface of said silicon layer, said bottom major surface being the exposed surface of said sapphire substrate and said outer peripheral edge area encompassing both said sapphire substrate and said layer of silicon.

13. The process of claim 10 wherein the density of said implants is greater than about 95% of theoretical.

14. The process of claim 10 wherein said tank is capable of sustaining a vacuum.

15. The process of claim 10 wherein the resistivity of each said implant is less than about 4×

10^-6 ohm-cm.

16. The process of claim 10 wherein said electroforming solution is an aqueous solution consisting essentially, in grams per liter, of about 250 grams of hydrated copper sulfate, 10 grams of sulphuric acid, 0.008 gram of thiourea, and 0.75 gram of molasses.

17. The process of claim 10 wherein said step of establishing a flow of direct current comprises establishing a flow of direct current equal to about one milliampere per hole.

18. The process of claim 14 further including the steps of establishing a vacuum in said tank prior to said surrounding step and, after conducting said surrounding step, maintaining said vacuum in said tank for a period of time sufficient for said solution to completely fill said plurality of holes and, thereafter, returning said tank to atmospheric pressure.

19. The process of claim 18 wherein said step of establishing a vacuum comprises establishing a vacuum of at least about 1 Torr.

20. The process of claim 10 further including the steps of continuing said flow of direct current until said feed-through conductors have emerged from said holes and simultaneously growing the emerged feed-through conductors away from said top and bottom surfaces and parallel to said top and bottom surfaces forming thereby substantially equally-sized rivet-like terminations on both sides of said body.

21. An electroforming solution, said solution consisting essentially, in grams per liter, of from about 220 grams to about 270 grams hydrated copper sulfate, from about 5 grams to about 28 grams sulfuric acid, from about 0.007 grams to about 0.013 grams thiourea and from about 0.3 to about 1 gram molasses.

22. The electroforming solution of claim 21 wherein the electroforming solution consists essentially, in grams per liter, of about 250 grams of hydrated copper sulfate, about 10 grams of sulphuric acid, about 0.008 gram of thiourea, and about 0.75 gram of molasses.