Supply voltage sense amplifier

• US 4,368,420 A
• Filed: 04/14/1981
• Issued: 01/11/1983
• Est. Priority Date: 04/14/1981
• Status: Expired due to Fees

• Current Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Original Assignee: Fairchild Camera and Instrument Corporation (ON Semiconductor Corporation)
• Inventors: Kuo, James R.
• Primary Examiner(s): PELLINEN, A DAVID
• Application Number:
  US06/254,338
• Time in Patent Office: 637 Days
• Field of Search: 307/296 R, 307/297, 323/226, 323/311-316, 323/299, 323/303, 323/901, 323/907, 323/267, 323/268-272, 323/281, 330/296
• US Class Current: 323/303
• CPC Class Codes: G05F 3/265 using bipolar transistors only
• CPC Class Codes: H03F 1/302 in bipolar transistor amplifiers H03F1/303, H03F1/305, H03F1/307 take precedence
• CPC Class Codes: H03F 3/343 with semiconductor devices only
• CPC Class Codes: H03K 5/02 by amplifying H03K5/04 takes precedence
• CPC Class Codes: Y10S 323/901 Starting circuits
• CPC Class Codes: Y10S 323/907 Temperature compensation of semiconductor

Abstract

A temperature-compensated reference voltage circuit includes a transistor having a positive temperature coefficient of current. A circuit for establishing a predetermined current in the positive-temperature-coefficient-of-current transistor is connected to that transistor. A predetermined resistance serially connects the positive-temperature-coefficient-of-current transistor with a transistor having negative temperature coefficient of base-to-emitter voltage. The temperature-compensated reference voltage is established between the transistors. The temperature-compensated reference voltage circuit is particularly useful in a supply voltage sense amplifier circuit for thermal printhead drive transistors or other load elements. The sense amplifier circuit includes a circuit for comparing the reference voltage and a supply voltage. An output is adapted to be connected to a load for receiving the supply voltage. A circuit is connected to receive an input from the comparing circuit, and to said output, for enabling the output when the supply voltage is equal or greater than the reference voltage.

Claims

1. A temperature-compensated supply voltage sense amplifier comprising:

a first transistor circuit including a transistor means having a positive temperature coefficient of current for providing a positive temperature coefficient current in which the current increases with increasing temperature;

a second transistor circuit including a transistor means having a negative temperature coefficient of base-to-emitter voltage;

a third transistor circuit including transistors means forming a current mirror coupled between said first and said second transistor circuits for transferring said positive temperature coefficient current from said first transistor circuit into said second transistor circuit; and

a resistance means coupled between said third transistor circuit and said second transistor circuit for establishing a constant reference voltage at a first node between said resistance means and said current mirror, the magnitude of which is independent of temperature.

2. A sense amplifier according to claim 1 wherein said first transistor means comprises:

a first pair of transistors configured to have a predetermined difference in their base-to-emitter voltages when conducting, and each having a positive temperature coefficient of current, and a first resistive element having a predetermined resistance;

said current mirror comprises a second pair of transistors connected to said first pair of transistors for supplying current to said first pair; and

said resistance means comprises a second resistive element having a resistance relative to the resistance of said first resistive element such that current flow through said second resistive element establishes the temperature-compensated reference voltage.

3. The sense amplifier circuit of claim 2 in which said second pair of transistors are PNP lateral transistors.

4. The sense amplifier circuit of claim 1 or 2 in which said negative temperature-coefficient transistor is an NPN vertical transistor.

5. A supply voltage sense amplifier circuit according to claim 1 comprising:

means for comparing the reference voltage and a supply voltage;

an output circuit adapted to be connected to a load; and

means connected to said comparing means and said output circuit for receiving an input from said comparing means and enabling said output circuit when the supply voltage has a predetermined relationship relative to the reference voltage.

6. The sense amplifier circuit of claim 5 in which said means for comparing comprises first and second transistors, each controlling alternative current flow paths, the first transistor being connected to receive the reference voltage as a control input, and the second transistor being connected to receive the supply voltage as a control input.

7. The sense amplifier circuit of claim 6 additionally comprising a first output transistor connected to receive the supply voltage and a control signal for turning on said first output transistor when the supply voltage at said second transistor is at least equal to said reference voltage at said first transistor.

8. The sense amplifier circuit of claim 7 additionally comprising at least a second output transistor connected to supply an output current when said first output transistor is turned off and to be turned off when said first output transistor is turned on.

9. The sense amplifier circuits of claim 7 additionally comprising a resistive element having a variable resistance connected between said first output transistor and a predetermined potential, the output voltage from said first output transistor being both variable and temperature-compensated.

10. The sense amplifier circuit of claim 9 in which said first output transistor comprises one transistor of a Darlington pair.

11. A sense amplifier according to claim 1 wherein said current mirror comprises a constant current source at a given temperature.

12. A sense amplifier according to claim 1 wherein said transistor means in said second transistor circuit comprises means for decreasing the magnitude of the voltage on a second node between said resistance means and said second transistor circuit with increasing temperature for providing said constant reference voltage on said first node.