Surface inspection scanning system

• US 4,376,583 A
• Filed: 05/12/1981
• Issued: 03/15/1983
• Est. Priority Date: 05/12/1981
• Status: Expired due to Term

• Current Assignee: ADE Optical Systems Corporation
• Original Assignee: Aeronca Electronics Incorporated
• Inventors: Smith, Michael L., Hunt, James D., Wilkes, James L., Vander Neut, Richard D., Cushing, Charles J., Alford, W. Jerry
• Primary Examiner(s): Corbin, John K.
• Assistant Examiner(s): Koren, Matthew W.
• Application Number:
  US06/262,866
• Time in Patent Office: 672 Days
• Field of Search: 356/430, 356/431, 356/237, 250/562, 250/563, 250/572, 209/577, 209/579, 209/587
• US Class Current: 356/237.2
• CPC Class Codes: G01N 21/88 Investigating the presence of flaws or contamination

Abstract

A system for laser scanning a relatively movable reflective surface element and inspecting that surface by monitoring the reflected energy in both light and dark channel receivers. Flaws occurring on the surface of the element, depending on the types of flaws, cause various frequency components to be present in the reflected energy and affect the amount of energy reflected to the light and dark channel receivers. Circuitry is included to detect and classify the various types of flaws as they are scanned, to compute the condition of the inspected element and to grade that inspected element as being in an acceptable state or in one of a plurality of unacceptable states. The described reflective surface element is a silicon wafer of the type used as the base substrate in fabricating integrated circuits and other electronic components.

Claims

1. A flaw inspection system comprising:

means defining an inspection surface;

means for repeatedly scanning a narrow beam of electromagnetic radiation along a line across said defined inspection surface;

means for transporting a reflective surface element to be inspected at a predetermined speed along said inspection surface in a direction transverse to said scanning line;

means defining a normally light channel for receiving electromagnetic radiation specularly reflected from said transported element and producing a light channel output signal indicative of a change in said received specularly reflected radiation caused by flaws which may be present on said reflection surface;

means defining a normally dark channel for receiving scattered electromagnetic radiation reflected from flaws which may be present on said reflection surface of said transported element and producing a dark channel output signal indicative of said scattered radiation received therein;

first means connected to said light channel receiving means for comparing said light channel output signal with a first predetermined threshold level and outputting a predetermined signal level in a corresponding first threshold category channel whenever said light channel output signal and said first predetermined threshold level differ by a predetermined amount;

second means connected to said light channel receiving means for passing portions of said light channel output signal having frequency components within a predetermined range of frequencies and for comparing said passed portions with a bandpass threshold level and outputting a predetermined signal level in a corresponding second threshold category channel whenever said passed portions of said light channel output signal and said bandpass threshold level differ by predetermined amounts;

third means connected to said dark channel receiving means for comparing said dark channel output signal with a plurality of predetermined threshold levels and outputting a corresponding predetermined signal level in a corresponding threshold category channel whenever said dark channel output signal and a corresponding threshold level differ by predetermined amounts;

means for time sampling said threshold category channels a plurality of times during each scan and over a plurality of successive scans to define a plurality of sampling areas;

means for translating the occurrence of said output signal levels in said sampled threshold category channels into digital values according to the respective threshold category channels in which said output signal levels occurred;

means for storing each digital value according to its time location in the scan;

means for comparing said stored digital value with each successive digital value in a like time location within a corresponding sampling area and providing the greater of the compared digital values as the value designating the corresponding sampling area;

means for accumulating the occurrences of like designated sampling areas; and

means for evaluating the quality of said transported element according to preset accumulation values.

2. An inspection system as in claim 1, wherein said reflective surface element to be inspected is a silicon wafer and said scanning means includes a source of monochromatic radiation.

3. An inspection system as in claims 1 or 2, wherein said scanning means includes a laser generator for producing said narrow beam of electromagnetic radiation.

4. An inspection system as in claim 3, wherein said second comparing means includes a plurality of bandpass filters connected in parallel to receive said light channel output signal wherein each filter passes portions of said signal which has frequency components within a separate band of frequencies and the output of each filter is compared with a corresponding bandpass threshold level.

5. An inspection system as in claim 3, wherein said third comparing means includes three comparator circuits which receive respective threshold levels having signal to noise ratios of approximately 1:

1, 4;

1 and 20;

1.

6. An inspection system as in claim 4, wherein said third comparing means includes three comparator circuits which receive respective threshold levels having signal to noise ratios of approximately 1:

1, 4;

1 and 20;

1.

7. An inspection system as in claim 4, wherein said second comparing means includes a first bandpass filter that passes signals having frequency components within a band of frequencies from 50 to 200 KHz.

8. An inspection system as in claim 7, wherein said second comparing means includes a second bandpass filter that passes signals having frequency components within a band of frequencies from 170 to 1400 KHz.

9. An inspection system as in claim 8, wherein said second comparing means includes a third bandpass filter that passes signals having frequency components within a band of frequencies from 800 to 5000 KHz.

10. An inspection system as in claim 3, wherein said first, second and third means combine together to output a multi-bit address in their respective threshold category channels and said translating means includes a preprogrammed memory which contains flaw codes digitaly representing each flaw type according to a predetermined priority value and wherein said multi-bit address is applied to said memory;

and said time sampling means provides a train of command signals to said memory.

11. An inspection system as in claim 10, further including means for detecting the commencement of each scan before said radiation reaches said defined inspection surface and outputting a scan start signal upon such detection;

said first means threshold level is set to only provide said predetermined signal level in said first threshold category channel when said amount of difference is approximately equal to the expected change between light reception from the inspection surface and light received from the reflective surface element;

means connected to receive said scan start signal and the output of said first means on said first threshold category channel for determining that portion of each scan for which received radiation contains information from the actual surface of the reflective surface element.

12. A method of inspecting a silicon wafer comprising the steps of:

providing an inspection surface;

repeatedly scanning a narrow beam of electromagnetic radiation along a line across said defined inspection surface;

transporting a reflective surface silicon wafer element to be inspected at a predetermined speed along said inspection surface in a direction transverse to said scanning line;

providing a normally light channel receiver for receiving electromagnetic radiation specularly reflected from said transported element and producing a light channel output signal indicative of any change in said received specularly reflected radiation caused by flaws which may be present on said reflection surface;

providing a normally dark channel receiver for receiving scattered electromagnetic radiation reflected from flaws which may be present on said reflection surface of said transported element and producing a dark channel output signal indicative of said scattered radiation received therein;

comparing said light channel output signal with a first predetermined threshold level and outputting a predetermined signal level in a corresponding first threshold category channel whenever said light channel output signal and said first predetermined threshold level differ by a predetermined amount;

passing portions of said light channel output signal having frequency components within a predetermined range of frequencies and comparing said passed portions with a bandpass threshold level and outputting a predetermined signal level in a corresponding second threshold category channel whenever said passed portions of said light channel output signal and said bandpass threshold level differ by predetermined amounts;

comparing said dark channel output signal with a plurality of predetermined threshold levels and outputting a corresponding predetermined signal level in a corresponding threshold category channel whenever said dark channel output signal and a corresponding threshold level differ by predetermined amounts;

time sampling said threshold category channels a plurality of times during each scan and over a plurality of successive scans to define a plurality of unit sampling areas;

translating the occurrence of said output signal levels in said sampled threshold category channels into digital values according to the respective threshold category channels in which said output signal levels occurred;

storing each digital value according to its time location in the scan;

comparing said stored digital value with each successive digital value in a like time location within a corresponding sampling area and providing the greater of the compared digital values as the value designating the corresponding sampling area;

accumulating the occurrences of like designated sampling areas; and

evaluating the quality of said surface of said transported silicon wafer element according to preset accumulation values.

13. A method, as in claim 12, wherein said said step of scanning is performed by utilizing a source of monochromatic radiation.

14. A method as in claims 12 or 13, wherein said source is a laser generator for producing said narrow beam of electromagnetic radiation.

15. A method, as in claim 14, wherein said second step of comparing utilizes a plurality of bandpass filters connected in parallel to receive said light channel output signal, wherein each filter passes portions of said signal which has frequency components within a separate band of frequencies and the output of each filter is compared with a corresponding bandpass threshold level.

16. A method, as in claim 14, wherein said third step of comparing utilizes three comparator circuits which receive respective threshold levels having signal to noise ratios of approximately 1:

1, 4;

1 and 20;

1.

17. A method, as in claim 15, wherein said third step of comparing utilizes three comparator circuits which receive respective threshold levels having signal to noise ratios of approximately 1:

1, 4;

1 and 20;

1.

18. A method, as in claim 15, wherein said second step of comparing utilizes a first bandpass filter that passes signals having frequency components within a band of frequencies from 50 to 200 KHz.

19. A method, as in claim 18, wherein said second step of comparing utilizes a second bandpass filter that passes signals having frequency components within a band of frequencies from 170 to 1400 KHz.

20. A method, as in claim 19, wherein said second step of comparing utilizes a third bandpass filter that passes signals having frequency components within a band of frequencies from 800 to 5000 KHz.

21. A method, as in claim 14, wherein a multi-bit address is output on the collective threshold category channels and said step of translating utilizes a preprogrammed memory which contains flaw codes digitaly representing each flaw type according to a predetermined priority value and said multi-bit address is applied to said memory;

and said time sampling step utilizes a train of command signals to said memory.

22. A method, as in claim 21, further includes the steps of detecting the commencement of each scan before said radiation reaches said provided inspection surface and responsively generating a scan start signal upon such detection;

said first predetermined threshold level is set to only provide said predetermined signal level in said first threshold category channel when said amount of difference is approximately equal to the expected change between light reception from the inspection surface and light received from the reflective surface element;

receiving both said scan start signal and the output on said first threshold category channel and determining that portion of each scan for which received radiation contains information from the actual surface of the reflective surface element.