Superluminescent LED with efficient coupling to optical waveguide

• US 4,376,946 A
• Filed: 11/28/1980
• Issued: 03/15/1983
• Est. Priority Date: 11/28/1980
• Status: Expired due to Term

• Current Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Original Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Inventors: Marcuse, Dietrich, Kaminow, Ivan P.
• Primary Examiner(s): Davie, James W.
• Application Number:
  US06/211,231
• Time in Patent Office: 837 Days
• Field of Search: 357/17, 372/45, 372/46, 372/50, 350/96.11, 350/96.15, 350/96.17, 350/96.18
• US Class Current: 385/49
• CPC Class Codes: G02B 6/4203 Optical features
• CPC Class Codes: H01L 33/0045 the devices being superluminescent diodes
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate

Abstract

Optical power is coupled into an optical waveguide system such as an optical fiber with maximum efficiency by a superluminescent light-emitting diode having lateral confinement of the light in the junction plane. The waveguide developed in the light-emitting diode is constructed to have an effective numerical aperture equal to the numerical aperture of the optical waveguide, and the refractive index n, the length L and width D of the waveguide in the diode is constructed such that the parameter nD/2L is much less than the numerical aperture. As a result, the inverted population of electrons within the active region are utilized with maximum efficiency to develop rays that are coupled into, and can be guided by, the optical waveguide system.

Claims

1. In combination, an edge-emitting, superluminescent light-emitting diode having an active layer with a pumped region of length L, and an output optical waveguide system having a core diameter greater than the width of the light-emitting region of said diode and a numerical aperture of NA_f, characterized in that the refractive indexes in said active layer adjacent to said pumped region in said superluminescent light-emitting diode are chosen to provide lateral confinement of light in the active layer of said diode to a waveguide region having a width D and a lateral numerical aperture NA_g substantially equal to the numerical aperture NA_f of said output optical waveguide system, the parameter nD/2L being much less than the numerical aperture, NA_g where n is the effective refractive index in the light-emitting region of said diode.

2. The combination as defined in claim 1 wherein said superluminescent light-emitting diode is further characterized in that the lateral confinement of light is achieved by a ridge structure that is present only over the light-emitting region of said light-emitting diode.

3. The combination as defined in claim 2 wherein the active layer of said superluminescent light-emitting diode is chemically composed of elements from the set including indium, gallium, arsenic and phosphorous.

4. The combination as defined in claim 3 wherein said ridge structure includes an indium phosphide layer epitaxially grown on said active layer.

5. The combination as defined in claim 1 wherein said superluminescent light-emitting diode has an antireflection coating over the light-emitting edge of said diode.

6. A superluminescent light-emitting diode comprising a substrate having at least one bottom epitaxial layer grown on one surface of said substrate, and a first contact bonded to an opposite surface of said substrate, an active layer epitaxially grown on said at least one bottom epitaxial layer, at least one top epitaxial layer grown on said active layer with a carrier type of polarity opposite to that of said at least one bottom layer and etched to provide a ridge type structure having a length L over at least a portion of said active layer, a second contact bonded to the top of said ridge thereby creating a strip light-emitting region in said active layer when current is applied to said first and second contacts, the thickness of said active layer and elements in said at least one top and bottom epitaxial layers being chosen such that the light is laterally confined in said active layer to a width of D with a numerical aperture NA_g, said width D and length L being chosen such that the parameter nD/2L is much less than said NA_g where n is the index of refraction in the active region of said active layer.

7. A superluminescent light-emitting diode as defined in claim 6 wherein said at least one bottom epitaxial layer and said at least one top epitaxial layer are composed of indium phosphide, and said active layer has a thickness of about 0.6 micrometers and is composed of elements from the set consisting of indium, gallium, arsenic, and phosphorous.