High efficiency thin-film multiple-gap photovoltaic device

• US 4,377,723 A
• Filed: 05/02/1980
• Issued: 03/22/1983
• Est. Priority Date: 05/02/1980
• Status: Expired due to Term

• Current Assignee: University of Delaware
• Original Assignee: University of Delaware
• Inventors: Dalal, Vikram L.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/146,323
• Time in Patent Office: 1,054 Days
• Field of Search: 136/249 TJ, 136/258 AM, 136/259, 357/2, 357/30
• US Class Current: 136/249
• CPC Class Codes: H01L 31/0236 Special surface textures
• CPC Class Codes: H01L 31/02363 of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: H01L 31/076 Multiple junction or tandem solar cells
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells

Abstract

A photovoltaic device includes at least two solar cells made from Group IV elements or their alloys in the amorphous state mounted on a substrate. The outermost or first cell has a larger bandgap than the second cell. Various techniques are utilized to improve the efficiency of the device.

Claims

1. In a thin-film multiple-gap photovoltaic device having an opaque electrical contact and a transparent electrical contact with a first cell and a second cell therebetween and with the first cell being adjacent the transparent electrical contact and the second cell being adjacent the opaque electrical contact, each of the cells having a junction layer and a base layer and an electrical junction therebetween and each base layer comprising a base region and an intermediate region with the intermediate region being adjacent the electrical junction layer, the improvement being each of said cells being made from semiconductor materials selected from Group IV elements and their alloys in the amorphous state, said first cell having a higher bandgap than the bandgap of said second cell, and an optically transparent amorphous semiconductor buffer layer of the same conductivity type as the conductivity type of the junction layer of said second cell between said first cell and said second cell for connecting said cells together.

2. The photovoltaic device of claim 1 wherein said buffer layer has a bandgap higher than the bandgap of said second cell, and said junction layer of said second cell and said base region of said first cell being heavily doped.

3. The photovoltaic device of claim 2 wherein the bandgap of said buffer layer is no higher than the bandgap of said first cell.

4. The photovoltaic device of claim 2 wherein the bandgap of said buffer layer is the same as the bandgap of said base region of said first cell.

5. The photovoltaic device of claim 4 wherein said buffer layer is of the same material as the material of said base region of said first cell.

6. The photovoltaic device of claim 1 including at least one intermediate cell between said first cell and said second cell, said cells decreasing in bandgap in accordance with their respective locations from said transparent electrical contact where the bandgap is highest to said opaque electrical contact where the bandgap is lowest, and wherein said intermediate cell is adjacent at least one optically transparent amorphous buffer layer for connecting said cells together.

7. The photovoltaic device of claim 1 wherein said opaque electrical contact is a substrate having a light reflecting upper surface, and said second cell being mounted on said reflecting surface for reflecting photons into said second cell for a multiple pass therethrough for increasing the voltage thereof.

8. The photovoltaic device of claim 7 wherein said substrate is textured.

9. The photovoltaic device of claim 1 wherein said opaque electrical contact is a substrate having said second cell mounted thereon, and said substrate being textured for increasing the voltage of said second cell.

10. The photovoltaic device of claim 9 wherein said cells conform to the irregularities resulting from the texturing of said substrate.

11. The photovoltaic device of claim 10 wherein the magnitude of texturing is substantially equal to the thickness of the absorber layer of each cell.

12. The photovoltaic device of claim 1 wherein said junction layer in at least one of said cells is graded in bandgap from a high value to a low value toward its electrical junction to provide a built-in field for increasing the voltage and efficiency thereof.

13. The photovoltaic device of claim 12 wherein said junction layer of said second cell is graded to increase the collection efficiency of said second cell.

14. The photovoltaic device of claim 1 wherein said base and said junction layers of each of said cells are graded in bandgap energy to provide increased current collection in each of said cells.

15. The photovoltaic device of claim 1 wherein said junction layer in at least one of said cells is an optically transparent junction layer made from a material having a higher bandgap than its corresponding base layer to function as a heterojunction cell.

16. The photovoltaic device of claim 1 wherein each of said cells includes as its junction layer either n⁺ or p⁺ doping with its base region being the other of n⁺ or p⁺ and with the intermediate region being lightly or not intentionally doped.

17. The photovoltaic device of claim 1 wherein at least one of said cells includes as its semiconductor more than one Group IV element.

18. The photovoltaic device of claim 1 wherein said buffer lever has a thickness of about 500-1000 A.

19. In a method of making a thin-film multiple-gap photovoltaic device wherein a first cell is formed on a second cell which is formed on an opaque electrical contact with a transparent electrical contact being formed on the first cell and wherein each cell includes a junction layer and a base layer with an electrical junction therebetween and with each base layer having a base region and an intermediate region, the improvement being forming each of said cells from semiconductor materials selected from Group IV elements and their alloys in the amorphous state, forming the first cell with a higher bandgap than the bandgap of the second cell, forming an optically transparent amorphous semiconductor buffer layer between the first cell and the second cell with the buffer layer having the same conductivity type as the conductivity type of the junction layer of the second cell and with the buffer layer having a bandgap higher than the bandgap of the second cell, and heavily doping the base region of the first cell and the junction layer of the second cell.

20. In the method of claim 19 including forming the opaque electrical contact as a substrate having a light reflecting upper surface on which the second cell is mounted for increasing the voltage thereof.

21. In the method of claim 19 including forming the opaque electrical contact as a substrate, and texturing the substrate before forming the second cell thereon to increase the voltage of the second cell.

22. In the method of claim 19 including grading the bandgap in the junction layer of at least one of the cells from a high value to a low value toward its electrical junction to provide a built-in field for increasing the voltage and efficiency thereof.

23. In the method of claim 19 including forming the junction layer of the first cell with a higher bandgap than its base layer, forming the base layer of the first cell with a higher bandgap than the junction layer of the second cell, and forming the junction layer of the second cell with a higher bandgap than its base layer.

24. In the method of claim 19 including forming at least one of the cells by the addition to silicon and hydrogen of a material selected from the group consisting of oxygen, fluorine and germanium.

25. In the method of claim 19 including forming at least one of the cells by the addition to germanium and hydrogen of a material selected from the group consisting of oxygen and fluorine.

26. In the method of claim 19 including forming the first cell of a high bandgap amorphous silicon, and forming the second cell of a lower bandgap amorphous silicon.

27. In the method of claim 19 including forming each cell with its junction layer of n⁺ or p⁺ doping and its base region of the other of n⁺ or p⁺ doping and with its intermediate region being lightly or not intentionally doped.

28. In the method of claim 19 including forming at least one of the cells from a semiconductor comprising more than one Group IV element.

29. The method of claim 19 including forming said buffer layer having a bandgap no higher than the bandgap of the first cell.

30. The method of claim 19 including forming said buffer layer from the same material as the material of said base region of said first cell is formed.