Dopant predeposition from high pressure plasma source
First Claim
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1. A method for predepositing dopant material on a semiconductor substrate without codepositing an insulator or semiconductor which comprises the steps of:
- providing a high pressure plasma reactor apparatus;
positioning a semiconductor substrate in said apparatus;
generating within said apparatus a high pressure rf plasma at a pressure of about one atmosphere or greater;
introducing dopant material to said plasma to form ionized species of said dopant; and
directing said plasma and said ionized species to impinge upon said semiconductor substrate and to deposit thereon a layer of dopant material only.
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Abstract
A method is provided for predepositing dopant material on semiconductor substrates. The semiconductor substrates are positioned within a high pressure plasma reactor apparatus. A high pressure rf plasma is generated in the apparatus at a pressure of about one atmosphere or greater. Dopant materials such as B2 H6, PH3, or AsH3 are introduced to the plasma and form ionized species of the dopant. The plasma and the ionized species are directed to the surface of the semiconductor substrates whereon a uniform layer of the dopant is deposited.
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Citations
10 Claims
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1. A method for predepositing dopant material on a semiconductor substrate without codepositing an insulator or semiconductor which comprises the steps of:
- providing a high pressure plasma reactor apparatus;
positioning a semiconductor substrate in said apparatus;
generating within said apparatus a high pressure rf plasma at a pressure of about one atmosphere or greater;
introducing dopant material to said plasma to form ionized species of said dopant; and
directing said plasma and said ionized species to impinge upon said semiconductor substrate and to deposit thereon a layer of dopant material only. - View Dependent Claims (2)
- providing a high pressure plasma reactor apparatus;
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3. A method for forming doped regions in a semiconductor substrate which comprises the steps of:
- providing a semiconductor substrate having an exposed surface portion;
positioning said substrate in a high pressure plasma reactor apparatus;
providing a plasma gas;
creating a high pressure rf plasma in said plasma gas at a pressure of about one atmosphere or greater;
introducing a second gas comprising a dopant impurity to said plasma gas;
reacting said second gas in said plasma to form ionized species of said dopant impurity;
directing said plasma toward said exposed surface portion of said substrate to deposit only said dopant impurity thereon; and
heating said substrate to redistribute said dopant impurity in said semiconductor substrate. - View Dependent Claims (4, 5)
- providing a semiconductor substrate having an exposed surface portion;
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6. A method for predepositing dopant material on opposed surfaces of a semiconductor substrate which comprises the steps of:
- providing a semiconductor substrate having first and second opposed surfaces;
generating a first high pressure rf plasma;
introducing a first dopant material to said first plasma to form a plasma of said first dopant;
directing said plasma of said first dopant to said first opposed surface to deposit a layer of only said first dopant material thereon;
generating a second high pressure rf plasma;
introducing a second dopant material to said second plasma to form a plasma of said second dopant; and
directing said plasma of said second dopant to said second opposed surface to deposit a layer of only said second dopant material thereon. - View Dependent Claims (7, 8, 9)
- providing a semiconductor substrate having first and second opposed surfaces;
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10. A method for making a photovoltaic device which comprises the steps of:
- providing a high pressure plasma reactor apparatus;
positioning a substrate of a first conductivity type in said apparatus;
generating in said apparatus a high pressure rf plasma;
introducing to said plasma a dopant of a second conductivity determining type;
directing said plasma and said dopant to a surface of said substrate and forming a layer of only said dopant thereon; and
heating said substrate with said layer thereon to an elevated temperature to form a p-n junction in said substrate.
- providing a high pressure plasma reactor apparatus;
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