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Dopant predeposition from high pressure plasma source

  • US 4,382,099 A
  • Filed: 10/26/1981
  • Issued: 05/03/1983
  • Est. Priority Date: 10/26/1981
  • Status: Expired due to Fees
First Claim
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1. A method for predepositing dopant material on a semiconductor substrate without codepositing an insulator or semiconductor which comprises the steps of:

  • providing a high pressure plasma reactor apparatus;

    positioning a semiconductor substrate in said apparatus;

    generating within said apparatus a high pressure rf plasma at a pressure of about one atmosphere or greater;

    introducing dopant material to said plasma to form ionized species of said dopant; and

    directing said plasma and said ionized species to impinge upon said semiconductor substrate and to deposit thereon a layer of dopant material only.

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