Dual species ion implantation into GaAs
First Claim
1. A method of forming a p-n junction in semiconducting GaAs device comprising:
- a. dual ion implantation of Ge and Ga to provide a layer having p-type conductivity activity;
b. forming an n-layer by dual ion implantation of Ge and As at a dose in the range from about 1×
1014 /cm2 extending to at least 3×
1015 /cm2 at an energy level substantially less than that used to form the p-layer; and
c. annealing said device.
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Accused Products
Abstract
p- and n- layers in GaAs by dual implants with either Ge and Ga or Ge and As into GaAs have been produced. The amphoteric behavior of Ge implants is modified in a predictable manner through control of ion dose and annealing temperature by dual implantation. The (Ge+Ga) dual implants have produced p-type conductivity for all doses up to an anneal temperature of 900° C. The (Ge+As) dual implants have yielded a significant enhancement of the n-type activity for ion doses ≧1×1015 /cm2, a conductivity type conversion for intermediate doses and little effect upon p-type activity for ion doses ≦3×1013 /cm2. By selecting appropriate ion energy, ion dose, and annealing temperature, formation of p-n junction is envisioned.
16 Citations
10 Claims
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1. A method of forming a p-n junction in semiconducting GaAs device comprising:
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a. dual ion implantation of Ge and Ga to provide a layer having p-type conductivity activity; b. forming an n-layer by dual ion implantation of Ge and As at a dose in the range from about 1×
1014 /cm2 extending to at least 3×
1015 /cm2 at an energy level substantially less than that used to form the p-layer; andc. annealing said device. - View Dependent Claims (2, 3, 4)
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5. A method of forming a layer in a semi-insulating GaAs device comprising:
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a. dual ion implantation of Ge and Ga with any dose from at least as low as 1×
1013 /cm2 up to at least 3×
1015 /cm2 ; andb. annealing, wherein an annealing temperature up to 900°
C. produces p-type conductivity activity in said layer. - View Dependent Claims (6, 9, 10)
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7. A method of forming a layer in a semi-insulating GaAs device comprising:
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a. dual ion implantation of Ge and As at a dose in the range of approximately 1×
1014 /cm2 up to at least 3×
1015 /cm2 to produce n-type conductivity in said layer; andb. annealing at a temperature in the range of at least 700°
to 1,000°
C.;wherein a conductivity type conversion occurs for ion doses of approximately 1×
1014 /cm2 ; andwherein p-type conductivity activity results from an ion dose of approximately 3×
1013 /cm2 or below.
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8. A method of forming a layer in a semi-insulating GaAs device comprising:
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a. dual ion implantation of Ge and As with a dose up to 3×
1013 /cm2, andb. annealing, wherein any annealing temperature in the range of 700°
to 1,000°
C. produces p-type conductivity activity in said layer.
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Specification