Rapid alteration of ion implant dopant species to create regions of opposite conductivity
First Claim
1. A method of fabricating a semiconductor device having at least two regions of opposite conductivity by implanting ions generated in an ion gun and coupled through a mass filter comprising the steps ofcreating a plasma in said ion gun having ions consisting of at least two elements which provide dopants of opposite conductivity in said semiconductor device,adjusting the mass filter to couple the ions of one of said two elements to a first region of said semiconductor device, andreadjusting the mass filter to couple the second one of said two elements to a second region of said semiconductor device.
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Abstract
A molecular beam epitaxial method of fabricating a semiconductor device is disclosed wherein the dopant is implanted by establishing a plasma containing ions of the dopant and the ions are coupled through a drift chamber to impinge on the growing substrate surface. The plasma formed in the ion gun has ions of boron and arsenic and therefore the dopants selected for implantation can be determined by setting a mass filter present in the ion gun. A change to the dopant of the opposite conductivity type can be accomplished in seconds by simply readjusting the mass filter in the ion gun.
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Citations
7 Claims
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1. A method of fabricating a semiconductor device having at least two regions of opposite conductivity by implanting ions generated in an ion gun and coupled through a mass filter comprising the steps of
creating a plasma in said ion gun having ions consisting of at least two elements which provide dopants of opposite conductivity in said semiconductor device, adjusting the mass filter to couple the ions of one of said two elements to a first region of said semiconductor device, and readjusting the mass filter to couple the second one of said two elements to a second region of said semiconductor device.
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4. In a molecular beam epitaxial process of fabricating a semiconductor device by depositing silicon on a silicon substrate and implanting the silicon with ions generated in an ion gun and coupled to the substrate through a mass filter, the method of creating at least two layers of opposite conductivity comprising the steps of,
creating a plasma in said ion gun having ions consisting of at least two elements which provide dopants of opposite conductivity in said semiconductor device, adjusting the mass filter to couple the ions of one of said two elements during the growth of a first layer in said semiconductor device, and readjusting the mass filter to couple the second one of said two elements during the growth of a second layer in said semiconductor device.
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