Rapid alteration of ion implant dopant species to create regions of opposite conductivity

• US 4,385,946 A
• Filed: 06/19/1981
• Issued: 05/31/1983
• Est. Priority Date: 06/19/1981
• Status: Expired due to Term

• Current Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Original Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Inventors: Swartz, Robert G., Voshchenkov, Alexander M., Finegan, Sean N., McFee, James H.
• Primary Examiner(s): Roy, Upendra
• Application Number:
  US06/275,418
• Time in Patent Office: 711 Days
• Field of Search: 148/1.5, 148/175, 148/187, 250/492.2, 250/492.3, 357/91
• US Class Current: 438/527
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/265 producing ion implantation

Abstract

A molecular beam epitaxial method of fabricating a semiconductor device is disclosed wherein the dopant is implanted by establishing a plasma containing ions of the dopant and the ions are coupled through a drift chamber to impinge on the growing substrate surface. The plasma formed in the ion gun has ions of boron and arsenic and therefore the dopants selected for implantation can be determined by setting a mass filter present in the ion gun. A change to the dopant of the opposite conductivity type can be accomplished in seconds by simply readjusting the mass filter in the ion gun.

Claims

1. A method of fabricating a semiconductor device having at least two regions of opposite conductivity by implanting ions generated in an ion gun and coupled through a mass filter comprising the steps of

creating a plasma in said ion gun having ions consisting of at least two elements which provide dopants of opposite conductivity in said semiconductor device,

adjusting the mass filter to couple the ions of one of said two elements to a first region of said semiconductor device, and

readjusting the mass filter to couple the second one of said two elements to a second region of said semiconductor device.

2. A method of fabricating a semiconductor device as defined in claim 1 wherein the step of creating a plasma in said ion gun comprises the steps of flowing a gas containing one of said two elements into the ion gun to establish a plasma having ions of one of the elements present in said gas, and

slowly advancing a solid charge containing a second one of said two elements into said ion gun to establish a plasma that includes ions of an element present in said solid charge.

3. A method of fabricating a semiconductor device as defined in claim 2 wherein said gas is primarily boron trifluoride and said solid charge is primarily arsenic.

4. In a molecular beam epitaxial process of fabricating a semiconductor device by depositing silicon on a silicon substrate and implanting the silicon with ions generated in an ion gun and coupled to the substrate through a mass filter, the method of creating at least two layers of opposite conductivity comprising the steps of,

creating a plasma in said ion gun having ions consisting of at least two elements which provide dopants of opposite conductivity in said semiconductor device,

adjusting the mass filter to couple the ions of one of said two elements during the growth of a first layer in said semiconductor device, and

readjusting the mass filter to couple the second one of said two elements during the growth of a second layer in said semiconductor device.

5. In a molecular beam epitaxial process of fabricating a semiconductor device as defined in claim 4 wherein the step of creating a plasma in said ion gun includes the steps of

inserting one of said two elements into said ion gun to establish a plasma containing ions of said one of two elements, and

slowly inserting the second one of two elements into said ion chamber to establish a plasma containing ions of the second one of said two elements.

6. In a molecular beam epitaxial process of fabricating a semiconductor device as defined in claim 4 wherein the step of creating a plasma in said ion gun includes the steps of

flowing a gas including said one of said two elements into said ion gun so as to establish a plasma containing ions of said one of said two elements, and

slowly inserting a solid charge of said second one of said two elements into said ion gun so as to establish a plasma containing ions of the second one of said two elements.

7. In a molecular beam epitaxial process of fabricating a semiconductor device as defined in claim 6 wherein the gas is primarily boron triflouride and the solid charge consists primarily of arsenic.