Electrolytic etch for eliminating shorts and shunts in large area amorphous silicon solar cells

• US 4,385,971 A
• Filed: 06/26/1981
• Issued: 05/31/1983
• Est. Priority Date: 06/26/1981
• Status: Expired due to Term

• Current Assignee: RCA Corporation
• Original Assignee: RCA Corporation
• Inventors: Swartz, George A.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/277,983
• Time in Patent Office: 704 Days
• Field of Search: 204/129.1, 204/129.3, 136/290, 136/258 AM, 136/243
• US Class Current: 205/656
• CPC Class Codes: H01L 31/208 Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 136/29 Testing, calibrating, treating, e.g. aging

Abstract

The present invention relates to a method for removing electrical shorts and shunts from solar cells, such as amorphous silicon solar cells. The method involves back-biasing the solar cells while they are in an electrolytic solution. It has been found that the process results in the removal of the shorts and shunts present in the cell.

Claims

1. A method for improving the performance of an amorphous silicon solar cell which incorporates a highly conductive electrode contacting one of the layers of the solar cell, comprising the step of applying a reverse bias voltage to said highly conductive layer while said solar cell is immersed in an electrolyte, said reverse bias voltage being applied through said electrolyte, whereby shorts or shunts in said solar cell are removed by an electrolytic etch of said solar cell.

2. The method according to claim 1 further comprising insulating the highly conductive electrode of the solar cell from said electrolyte.

3. The method according to claim 2 wherein the highly conductive electrode of said photocell is adjacent to and contacts a P type semiconductor region and said electrolyte comprises a weak solution of ammonium hydroxide (NH₄ OH).

4. The method of claim 2 wherein an N type semiconductor region is adjacent to said highly conductive electrode of said photocell and said electrolyte is selected from the group consisting of dilute sulfuric acid (H₂ SO₄) and dilute copper sulfate (CuSO₄).