Method for chemical vapor deposition

• US 4,388,342 A
• Filed: 05/28/1980
• Issued: 06/14/1983
• Est. Priority Date: 05/29/1979
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Aoyama, Takashi, Suzuki, Takaya, Inoue, Yosuke
• Primary Examiner(s): Childs, Sadie L.
• Application Number:
  US06/154,025
• Time in Patent Office: 1,112 Days
• Field of Search: 427/46.18, 427/9, 427/86, 427/87, 427/248.1, 427/255, 427/255.1, 427/255.2, 427/314, 118/712, 118/725, 118/729, 118/730, 118/733, 118/728, 118/690, 23/230 A, 73/23
• US Class Current: 427/8
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: Y10T 436/12 Condition responsive control

Abstract

A method of forming by CVD technique a layer of material with good uniformity and reproducibility on the surfaces of a plurality of substrates supported within the reaction chamber. The feature of the invention is that a gaseous mixture containing a reaction gas is supplied into the reaction chamber from the inlet of the reaction chamber and the auxiliary gas nozzle provided between the inlet and the exhaust in a predetermined control manner. Moreover, part of the gaseous mixture within the reaction chamber is sampled from the gas flow for the measurement of the concentration of the reaction gas, and from the measured results is determined the rate of gas supply from the auxiliary gas nozzle.

Claims

1. A method for chemical vapor deposition of layers of material individually onto the surfaces of a plurality of substrates within a reaction chamber having a primary gas inlet at one end and a gas exhaust at another end, which comprises the steps of:

(a) supporting a plurality of substrates within said reaction chamber with said substrates being arranged in series in a direction extending from the inlet to the exhaust,

(b) supplying a gaseous mixture containing a gaseous compound of said material into said reaction chamber through said inlet and causing the gaseous mixture to flow through the reaction chamber over the plurality of said substrates to said exhaust,

(c) heating said substrates to a temperature at which chemical vapor deposition onto said substrates takes place during the flow of said gaseous mixture through said reaction chamber,

(d) removing a sample of said gaseous mixture from the flow of said gaseous mixture and from said reaction chamber at a position along the series-arranged substrates between said inlet and said exhaust,

(e) measuring a concentration of said gaseous compound in said sample of the gaseous mixture removed from said reaction chamber, and

(f) supplying, in addition to said gaseous mixture, an auxiliary gas which contains said gaseous compound into the flow of said gaseous mixture in said reaction chamber to compensate for the consumed gaseous compound in said reaction chamber in response to the measurement of said concentration of said gaseous compound whereby the chemical vapor deposition in said reaction chamber is maintained substantially uniform along the length of the series-arranged substrates.

2. A method for chemical vapor deposition as claimed in claim 1, wherein said gaseous compound is supplied through said auxiliary gas nozzle being located in a turbulent layer of said flow of said gaseous mixture.

3. A method for chemical vapor deposition as claimed in claim 1, wherein said sample of the gaseous mixture is taken out through at least one sampling tube having an orifice located in a turbulent layer of said flow of said gaseous mixture in said reaction chamber.

4. A method for chemical vapor deposition as claimed in claim 3, wherein said auxiliary gas nozzle is located in a portion of said flow of said gaseous mixture that is upstream of that portion of the flow where said orifice of said sample tube is located, wherein the concentration of said gaseous compound in said sample of the gaseous mixture determines a quantity of the gaseous compound which is contained in said auxiliary gas to be supplied through said auxiliary gas nozzle.

5. A method for chemical vapor deposition as claimed in claim 1, wherein said substrates are semiconductor wafers and said layers of material are layers of said semiconductor.

6. A method for chemical vapor deposition as claimed in claim 5, wherein said semiconductor comprises silicon.

7. A method for chemical vapor deposition as claimed in claim 1, wherein said substrates are monocrystalline insulator wafers and said layers of material are layers of monocrystalline silicon.

8. A method for chemical vapor deposition of layers of material onto the surfaces of a plurality of substrates within a reaction chamber having a gas inlet, a gas exhaust and a plurality of auxiliary gas nozzles which are positioned between said inlet and said exhaust, said plurality of substrates being arranged in the reacton chamber in series in a direction extending from the inlet to the exhaust, which comprises the steps of:

(a) performing a preparatory chemical vapor deposition of said material onto said substrates with a gaseous mixture containing a gaseous compound of said material, which gaseous mixture is supplied into said reaction chamber through said inlet, whereby the desired parameters of the chemical vapor deposition system employed are determined by the following steps;

(i) measuring a distribution of a concentration "C" of said gaseous compound in said reaction chamber by taking samples of said gaseous mixture out of the reaction chamber from a flow of said gaseous mixture as a function of C(x) of a distance "x" through a direction of the flow of said gaseous mixture,

(ii) measuring a distribution of a growth rate "G" of said layers by said chemical vapor deposition as a function G(x) of said distance "x",

(iii) calculating a proportional coefficient K(x) by dividing said G(x) by said C(x), and

(iv) calculating a distribution of a concentration "C" of said gaseous compound as a function C'"'"'(x) of said distance "x" by dividing a constant G'"'"' which is determined on the basis of said G(x) by said K(x), where C'"'"'(x) is a desired distribution to deposit uniform layers of said material, and

(b) performing a chemical vapor deposition of the layers of the material onto the substrates with said gaseous mixture which is supplied into said reaction chamber through said inlet and additionally with an auxiliary gas containing said gaseous compound which is supplied into said reaction chamber through said auxiliary gas nozzles positioned in the flow of gaseous mixture in said reaction chamber in order that the distribution of the concentration of said gaseous compound in said reaction chamber approaches said C'"'"'(x) whereby the chemical vapor deposition in said reaction chamber is maintained substantially uniform along the length of the series-arranged substrates.

9. A method for chemical vapor deposition as claimed in claim 8, wherein the measuring in the step (i) is performed using a sampling tube having an orifice located in a turbulent layer of said flow of said gaseous mixture in said reaction chamber.

10. A method for chemical vapor deposition as claimed in claim 9, wherein the measuring in said step (i) is performed by the sampling tube which is moved through the flow of said gaseous mixture.

11. A method for chemical vapor deposition as claimed in claim 8, wherein the measuring, calculating and supplying of said gaseous mixture of said steps (a) and (b) are controlled automatically by means of a computer.

12. A method for chemical vapor deposition as claimed in claim 8, wherein said material comprises silicon.