Solid state image sensor with image sensing elements having charge coupled photocapacitors and a floating gate amplifier

• US 4,388,532 A
• Filed: 04/27/1981
• Issued: 06/14/1983
• Est. Priority Date: 04/27/1981
• Status: Expired due to Fees

• Current Assignee: Eastman Kodak Company
• Original Assignee: Eastman Kodak Company
• Inventors: Garcia, Enrique
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): Brophy, J. Jon
• Application Number:
  US06/258,152
• Time in Patent Office: 778 Days
• Field of Search: 250/211 J, 250/578, 357/24 LR, 357/32, 357/31
• US Class Current: 250/208.1
• CPC Class Codes: H01L 27/14862 CID imagers
• CPC Class Codes: H01L 29/76816 Output structures

Abstract

A solid state image sensing array has a plurality of imaging sensing elements comprising first and second charge coupled MOS capacitors and a floating gate FET. The floating gate of the FET is disposed beneath the electrode of the second capacitor. In operation, a potential well is formed under the first capacitor. When the element is exposed to radiation, photochargers are accumulated in the potential well. To readout the photocharge, the charge is shifted under the second capacitor, thereby modulating the conductivity of the floating gate FET to provide signal sensing and amplification at the image sensing element. After readout, the photocharge can be purged from the sensing element by removing the potential from both capacitors, or if nondestructive readout is desired, the photocharge can be shifted back under the first capacitor.

Claims

1. A solid state image sensing array comprising a plurality of image sensing elements, each of said elements comprising:

a first MOS capacitor;

a second MOS capacitor disposed adjacent said first MOS capacitor; and

a floating gate FET, the floating gate of said FET being disposed beneath the electrode of said second MOS capacitor, whereby when a photocharge accumulated in said first MOS capacitor is shifted to said second MOS capacitor, the gate of said floating gate FET is modulated to provide a nondestructive amplified readout of said photocharge through said FET.

2. The invention claimed in claim 1, wherein:

said image sensing elements are arranged in rows and columns;

said first MOS capacitors in each row being connected in common to a vertical scan register;

said second MOS capacitors in said array being connected in common to a bias potential;

the drains of said FET'"'"'s of said elements in each column being connected in common to a source of drain voltage through an FET switch;

the FET switch for each column being driven by a horizontal scan register; and

the sources of the FET'"'"'s of said elements in said array being connected in common through a load to ground, whereby an output signal from said array may be derived from said common connection at a point in said connection above said load.

3. The invention claimed in claim 2, wherein said first MOS capacitor in said elements in each row are formed by a continuous strip of substantially transparent conductive material.

4. The invention claimed in claim 3, wherein said second MOS capacitor in said elements in each row are formed by a continuous strip of transparent conductive material and said floating gates are formed of transparent conductive material disposed beneath said second MOS capacitor.

5. A solid state image sensing array comprising a plurality of image sensing elements, each of said elements comprising:

a body of lightly doped semiconductive material;

a layer of insulating material disposed over the surface of said body of material;

a first transparent electrode disposed over the surface of said insulating layer, forming a first MOS capacitor;

a second electrode disposed over the surface of said insulating material adjacent said first electrode, forming a second MOS capacitor;

a pair of highly doped regions in said body of semiconductive material of opposite conductivity type to said body for forming the source and drain of a field affect transistor disposed adjacent said second electrode; and

a gate electrode disposed between said second electrode and said insulating layer, and extending over portions of said highly doped regions to form a field affect transistor.

6. The invention claimed in claim 5, wherein said image sensor includes a horizontal and vertical scan register, and wherein said image sensing elements are disposed in rows and columns, said first MOS capacitors in the elements in each row being connected in common to said vertical scan register, said second MOS capacitors in all of said elements being connected in common to a source of bias voltage, the drains of said FET'"'"'s in the elements in each column being connected in common through switches to a source of drain voltage, the switches being controlled by said horizontal scan register;

and the drains of all the FET'"'"'s in the array being connected in common through a load to ground, whereby an output signal is obtained from said common connection into said drains above said load.