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Apparatus for performing growth of compound thin films

  • US 4,389,973 A
  • Filed: 12/11/1981
  • Issued: 06/28/1983
  • Est. Priority Date: 03/18/1980
  • Status: Expired due to Term
First Claim
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1. Apparatus for growing a compound thin film of different elements on a stationary substrate surface, wherein said film is formed by alternate surface reactions of different substances respectively containing said different elements, comprising:

  • a single chamber for receiving a substrate;

    vacuum means coupled to said chamber;

    heating means for heating the substrate within said chamber;

    a plurality of vapor sources having outputs coupled to said chamber for separately supplying vapors of said different substances from said vapor sources to said chamber;

    a gas phase medium including a source of gas coupled to said chamber and to each of said vapor source outputs; and

    means for controlling a flow of said gas phase medium through said chamber from said gas source to said vacuum means, for supplying said gas phase medium at least at the conclusion of the separate supply of one of said vapors and prior to the separate supply of another said vapor, and for selectively controlling a flow of said gas phase medium at said source outputs to direct said medium in an upstream direction to said vapor sources, for alternately stopping the supply of vapor from said sources, for alternately stopping the supply of vapor from said sources, and to direct said medium in a downstream direction toward said chamber to isolate each said source from the other, wherein said chamber is substantially cleared of said vapors between each said alternate surface reaction in the growing of said compound thin film on said substrate, and wherein self-saturating surface reactions thereby occur during each separate supply of a vapor source, and said supply of gas prevents reactions between said sources as said compound film of different elements is grown on said substrate surface.

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