Bias-voltage generator
First Claim
1. A bias-voltage generator for applying a bias voltage to a semiconductor substrate having an integrated circuit thereon, said generator comprising:
- an oscillator producing an oscillating AC signal, said oscillator comprising an RC circuit for varying the frequency of said oscillating AC signal in response to variations of the voltage level of said semiconductor substrate, said RC circuit including a capacitor (C) and a variable resistance (R) comprising a MOSFET having a gate electrode directly connected to the semiconductor substrate such that said variable resistance varies in accordance with the variations of the voltage level of the semiconductor substrate;
a coupling capacitor connected, at one end thereof, to the output of said oscillator; and
a charge pumping circuit for absorbing electric charges accumulated in said semiconductor substrate, connected firstly to the other end of said coupling capacitor, secondly to a ground of said integrated circuit, and thirdly to said semiconductor substrate,wherein the oscillating frequency of said oscillating AC signal produced by said oscillator varies in proportion to the variation of the voltage level of said semiconductor substrate.
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Accused Products
Abstract
A substrate bias-voltage generator is comprised of an oscillator, and a charge pumping circuit, driven by the oscillator via a coupling capacitor, which transfers accumulated electric charges, out of the semiconductor substrate. The oscillator frequency is varied in accordance with the variation of the voltage level of the semiconductor substrate, preferably by means of an RC circuit, fabricated by a MOSFET variable resistance (R) and a capacitor (C), within a ring oscillator or a multi-vibrator. The gate electrode of the MOSFET variable resistance is directly connected to the semiconductor substrate.
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Citations
5 Claims
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1. A bias-voltage generator for applying a bias voltage to a semiconductor substrate having an integrated circuit thereon, said generator comprising:
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an oscillator producing an oscillating AC signal, said oscillator comprising an RC circuit for varying the frequency of said oscillating AC signal in response to variations of the voltage level of said semiconductor substrate, said RC circuit including a capacitor (C) and a variable resistance (R) comprising a MOSFET having a gate electrode directly connected to the semiconductor substrate such that said variable resistance varies in accordance with the variations of the voltage level of the semiconductor substrate; a coupling capacitor connected, at one end thereof, to the output of said oscillator; and a charge pumping circuit for absorbing electric charges accumulated in said semiconductor substrate, connected firstly to the other end of said coupling capacitor, secondly to a ground of said integrated circuit, and thirdly to said semiconductor substrate, wherein the oscillating frequency of said oscillating AC signal produced by said oscillator varies in proportion to the variation of the voltage level of said semiconductor substrate. - View Dependent Claims (2, 3, 4, 5)
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Specification