Wafer support system

• US 4,392,915 A
• Filed: 02/16/1982
• Issued: 07/12/1983
• Est. Priority Date: 02/16/1982
• Status: Expired due to Fees

• Current Assignee: Eaton Corp. (Wisconsin) (Eaton Corporation PLC.)
• Original Assignee: Eaton Corp. (Wisconsin) (Eaton Corporation PLC.)
• Inventors: Zajac, John
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/348,625
• Time in Patent Office: 511 Days
• Field of Search: 156/345, 156/643, 156/646, 250/531, 204/192 E, 204/164, 204/298, 269/21
• US Class Current: 438/716
• CPC Class Codes: C30B 33/00 After-treatment of single crystals or homogeneous polycrystalline material with defined structure C30B31/00 takes precedence
• CPC Class Codes: C30B 35/005 Transport systems
• CPC Class Codes: H01L 21/6838 with gripping and holding devices using a vacuum; Bernoulli devices

Abstract

A system for supporting wafers (18) on a gas cushion within the vacuum chamber (12) of a plasma etcher (10). An etchant gas is introduced into the vacuum chamber, and a second gas at a volume flow rate much lower than the volume flow rate of the etchant gas is directed to orifices formed in a wafer-receiving surface of an electrode (16) to define the gas cushion. In accordance with one aspect of the invention, the second gas is an inert gas, and in accordance with another aspect of the invention, the second gas is a reactant gas which is also directed into the vacuum chamber to serve as a reactant gas in conjunction with the first reactant gas.

Claims

1. In a plasma etching apparatus comprising a vacuum chamber, a first electrode received within said vacuum chamber, a second electrode received within said vacuum chamber in spaced relation to said first electrode, a wafer-receiving surface formed on said second electrode, a first supply of a first gas, and means for conducting said first gas from said first supply into said vacuum chamber;

the improvement comprising a plurality of orifices formed in said wafer-receiving surface, a second supply of a second gas, and means conducting said second gas from said second supply to said orifices to define gas bearing means supporting said wafers above said second electrode.

2. Apparatus as claimed in claim 1, in which said first gas is a reactant gas capable of forming a plasma within said vacuum chamber when radio frequency electrical energy is applied to said first and second electrodes.

3. Apparatus as claimed in claims 1 or 2, in with said second gas comprises an inert gas.

4. Apparatus as claimed in claim 1 in which said first and second gas each comprises a reactant gas capable of forming a plasma within said vacuum chamber when radio frequency electrical engery is applied to said first and second electrodes.

5. Apparatus as claimed in claim 1, in which said means conducting said second gas comprises a manifold, conduit means connecting said second supply of said second gas to said manifold, and conduit means connecting said manifold to said orifices.

6. Apparatus as claimed in claim 5, including valve means in the conduit means connecting said manifold to said orifices, each of said valve means controlling the flow of gas to one or more of said orifices.

7. Apparatus as claimed in claim 1, in which said means conducting said second gas from said second supply to said orifices comprises first conduit means;

and including valve means in said first conduit means, and second conduit means having one end connected to said valve means and the other end extending into said vacuum chamber, said valve means being operable to selectively direct the flow of gas from said second supply to said first and second conduit means, or to said first conduit means only.

8. Apparatus as claimed in claim 7, in which said first and said second gas each comprises a reactant gas capable of forming a plasma within said vacuum chamber when radio frequency electrical energy is applied to said first and second electrodes.

9. A method of operating a plasma etcher comprising positioning one or more wafers on an electrode within the vacuum chamber of said plasma etcher, directing a flow of a first gas into said vacuum chamber above said one or more wafers at a first predetermined volume flow, and selectively directing a second gas into said vacuum chamber through said electrode toward the one or more wafers positioned thereon at a second predetermined volume flow to alternately support said one or more wafers on a cushion of said second gas and then allow said one or more wafers to come to rest in engagement with said electrode.

10. A method as claimed in claim 9, in which said first gas is a reactant gas capable of forming a plasma within said vacuum chamber.

11. A method as claimed in claim 9, in which said second gas is an inert gas.

12. A method as claimed in claim 9, including directing said second gas to said vacuum chamber above said wafers as well as beneath said wafers, said first and second gases both being reactant gases capable of forming a plasma within said vacuum chamber.

13. A method of operating a plasma etcher comprising moving wafers one by one into an entrance end of the vacuum chamber thereof and onto a surface of an electrode of said plasma etcher, said surface being inclined slightly downward from the horizontal toward the exit end of the chamber;

directing a flow of a first gas into said vacuum chamber above said electrode at a first predetermined volume flow; and

selectively directing a second gas into said vacuum chamber through said electrode and toward the wafers thereon to alternately support said wafers on a cushion of said second gas and then to allow said one or more wafers to come to rest in engagement with said electrode, said wafers being moved by gravity toward said exit end when said wafers are supported by the second gas.