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ZnS:Mn Thin-film electroluminescent element with memory function

  • US 4,394,601 A
  • Filed: 05/18/1977
  • Issued: 07/19/1983
  • Est. Priority Date: 07/05/1973
  • Status: Expired due to Term
First Claim
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1. A ZnS:

  • Mn thin-film electroluminescent element containing a hysteresis memory function which comprises a ZnS;

    Mn thin-film electroluminescent layer containing ZnS polycrystalline grains having a diameter of 0.05 to 0.2μ and

    containing Mn in a concentration of 0.05 to 5.0 weight percent, said Mn serving as a luminescent center, said electroluminescent layer being sandwiched between a pair of dielectric layers, at least one of the dielectric layers being made of Y2 O3, and first and second electrodes provided on the respective dielectric layers, said ZnS;

    Mn electroluminescent layer having a thickness of 0.4-2.0μ and

    a dielectric constant at 1 KHz of about 10 to 22, a loss tangent at 1 KHz of about 1 to 4×

    103, and a breakdown strength of about 3 to 4×

    106 V/cm.

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