Transparent conductive film having areas of high and low resistivity

• US 4,395,467 A
• Filed: 12/30/1981
• Issued: 07/26/1983
• Est. Priority Date: 12/30/1981
• Status: Expired due to Term

• Current Assignee: Intersil Corporation (Renesas Electronics Corporation)
• Original Assignee: RCA Corporation
• Inventors: Zelez, Joseph, Vossen, John L. Jr.
• Primary Examiner(s): Lusignan, Michael R.
• Application Number:
  US06/335,707
• Time in Patent Office: 573 Days
• Field of Search: 427/35, 427/38, 427/108-110, 204/192 N, 428/697, 428/702
• US Class Current: 428/697
• CPC Class Codes: C04B 41/0027 Ion-implantation, ion-irradiation or ion-injection
• CPC Class Codes: C04B 41/80 of only ceramics
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: H01B 1/08 oxides
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y10S 148/128 Proton bombardment of silicon

Abstract

A method of forming areas of high and low resistivity in a transparent film of indium oxide and zirconium oxide is disclosed. The film is selectively ion implanted with protons and then annealed to lower the resistivity in the non-implanted portion.

Claims

1. A method of producing areas of high and low resistivity in a transparent film of indium oxide and zirconium oxide comprising ion implanting protrons into a portion of said film and annealing the film in a reducing gas at a temperature above about 700°

C. thereby substantially lowering the resistivity of that portion of the film not ion implanted.

2. A method in accordance with claim 1, wherein the film is implanted with a dose of from about 10¹⁰ to about 10¹⁶ protons/cm².

3. A method in accordance with claim 1, wherein the film is annealed at a temperature from about 700°

C. and about 850°

C.

4. A method in accordance with claim 1, wherein the film is annealed at a temperature of about 750°

C.

5. A method in accordance with claim 1, where the film is annealed in a reducing gas atmosphere of hydrogen and an inert gas.

6. A method in accordance with claim 5, wherein said atmosphere is hydrogen and nitrogen in a partial pressure ratio of 1:

9.

7. A method of forming a transparent conductive layer having areas of high and low resistivity on a substrate comprising depositing a film of indium oxide and zirconium oxide on said substrate, ion implanting protons into a portion of said film and annealing the film in reducing gas at a temperature above about 700°

C. thereby substantially lowering the resistivity of that portion of the film not ion implanted.

8. A structure produced in accordance with the method of claim 7.