Solid state image pickup

• US 4,395,736 A
• Filed: 07/17/1981
• Issued: 07/26/1983
• Est. Priority Date: 07/25/1980
• Status: Expired due to Term

• Current Assignee: Thomson-CSF
• Original Assignee: Thomson - Csf
• Inventors: Fraleux, Jean
• Primary Examiner(s): Richardson, Robert L.
• Application Number:
  US06/284,500
• Time in Patent Office: 739 Days
• Field of Search: 358/212, 358/213, 357/30, 357/32, 357/45, 250/211 R, 250/211 J, 250/213 R
• US Class Current: 348/303
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors

Abstract

A Detection Matrix having elementary modules disposed in lines and in columns. Each module has a photoconductance, a thin-film MOS transistor and a storage capacitor. The gate of the transistor is connected to a line electrode. The source of the transistor is connected to a video amplifier, and the drain of the transistor is connected to one terminal of the photocapacitance and of the capacitor. The other terminal of the photoconductance of the capacitor are both connected to the line electrode following or preceding the line electrode connected to the gate of the transistor.

Claims

1. A matrix for detecting electromagnetic radiation comprising a network of line and column electrodes, and interconnected therewith at intersections thereof cells, each cell comprising a MOS transistor having a gate and two other terminals, a two-terminal photo-sensitive photoconductance, and means for amplifying the electric signals supplied by each photo-sensitive element;

means adapted for transferring to a video amplifier the electric signals supplied by each line of elements addressed;

each MOS transistor adapted for receiving periodically at its gate a turn on pulse, applied simultaneously to all the MOS transistors in the same line;

one of the other terminals at each MOS transistor being connected to the transfer means, and the other to one terminal of the photoconductance in the cell;

means for applying a potential to all the lines; and

said other terminal of said photoconductance being connected to the line electrode adjacent to the one controlling the gate of the MOS transistor in its cell.

2. The detection matrix as claimed in claim 1, wherein the MOS transistors T₁ are made conducting by positive pulses and these pulses are conveyed over the same line for each line of cells.

3. The detection matrix as claimed in claim 1, wherein the amplification means comprise a storage capacitor connected in parallel across each photoconductance.

4. A matrix for detecting electromagnetic radiation comprising a network of line and column electrodes;

unit cells interconnected with said network, each cell being associated with a crossover of a line and column electrode;

each cell comprising a 3-terminal transistor having a control terminal and two flow terminals, and a two-terminal photosensitive element;

said control terminals in several cells being connected to the associated line electrode of said network;

one terminal of said photosensitive element of said several cells being connected to an adjacent line electrode of said network, with adjacent line is connected to the control terminals of several other cells;

the other terminal of said photosensitive element in each cell being connected to one of said flow terminals of the transistor in its cell, and the other flow terminal of said transistor being connected to the associated column electrode.

5. A matrix according to claim 4 wherein said photosensitive element is a photoconductive element, and further comprising means for amplifying the signal from said photoconductive element connected in parallel across said element.

6. A matrix according to claim 5 wherein said amplification mean comprises a storage capacitor connected in parallel across said photoconductance.

7. A matrix according to claim 5 wherein said transistor is an MOS transistor.

8. Detection matrix comprising a plurality of elementary modules disposed in lines and columns;

a plurality of line and column electrodes;

each module comprising a photoconductance, an MOS transistor, and a storage capacitor, with each transistor having a gate connected to a line electrode, a source adapted to be connected to a video amplifier, and a drain connected to one terminal of the photoconductor and to one terminal of the capacitor;

the other terminal of the photoconductor and the capacitor being connected to the line electrode following or preceding said line electrode connected to the gate of the transistor.