System for measuring the concentration of chemical substances

• US 4,397,714 A
• Filed: 06/16/1980
• Issued: 08/09/1983
• Est. Priority Date: 06/16/1980
• Status: Expired due to Term

• Current Assignee: University of Utah Research Foundation (State of Utah)
• Original Assignee: University of Utah (State of Utah)
• Inventors: Janata, Jiri, Huber, Robert J., Smith, Rosemary L.
• Primary Examiner(s): LARKINS, WILLIAM
• Application Number:
  US06/159,994
• Time in Patent Office: 1,149 Days
• Field of Search: 357/25, 357/23, 357/23 R, 357/23 MG, 357/84, 73/61 R, 204/1 T, 204/195 M, 204/195 R
• US Class Current: 205/775
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82

Abstract

A solid state chemically sensitive integrated circuit includes three field-effect transistors (FETs) fabricated on a single semiconductor substrate. The gate of a first FET is overlaid with a chemically sensitive element that is adapted to create an electrochemical potential at the gate when exposed to selected chemical substances. This gate is also electrically connected to the source of a second FET and the drain of a third FET. The second and third FETs are used as switches to selectively connect the gate of the first FET to ground, to an external reference potential, or to isolate it from all external signals. In the latter case, only the interaction between the chemically sensitive element and external chemical substances may affect the first FET'"'"'s operation thus allowing the first FET, when so isolated, to provide a measure of the chemical properties of the substance to which its chemically sensitive element is exposed. The presence of the second and third FETs allows the first FET to be protected from static shock during routine handling and when the device is not in use. They also allow the performance of the first FET to be fully characterized by permitting a controlled gate voltage to be applied to the first FET.

Claims

1. In a transducer system for detecting chemical properties of substances and including a semiconductor substrate having a doping polarity, a pair of spaced-apart diffusion regions located at the surface of the substrate and having doping polarity opposite that of said substrate material, an electrical insulator material overlying at least a portion of said diffusion regions and the surface of the substrate lying between the diffusion regions, a chemical selective system including a chemical selective membrane disposed over at least a portion of said insulator material, and a reference electrode connected in circuit with said spaced apart diffusion regions through a potential source, the combination thereof with

an electrical conductive material disposed between the substrate and diffusion regions and the chemical selective membrane so as to be located above at least a portion of the substrate which is between the diffusion regions,

a first switch element coupled to the conductive material and operable to selectively connect the conductive material to a voltage source, and

a second switch element coupled to the conductive material and operable to selectively connect the conductive material to a ground potential source.

2. Apparatus for measuring the concentration of chemical substances comprising:

a semiconductor substrate having a doping polarity;

a pair of spaced-apart diffusion regions located at the surface of said substrate material and having a doping polarity opposite that of the substrate material;

an electrical insulator material overlying at least a portion of said diffusion regions and the surface of the substrate material lying between the diffusion regions;

a conductive layer of material overlying at least a portion of said electrical insulator material;

a reference electrode coupled in circuit relationship with said diffusion regions through a reference potential source;

switch means for electrically connecting the conductive layer of material selectively to a voltage source or to a ground potential source; and

a layer of chemical sensitive material overlying said conductive layer, said layer of chemical sensitive material being adapted to create an electrochemical voltage when exposed to selected chemical substances and to apply said electrochemical voltage at said conductive layer, said electrochemical voltage being referenced through said reference electrode to said diffusion regions.

3. Apparatus as defined in claim 2 wherein said conductive layer is comprised of an opaque material.

4. Apparatus as defined in claim 2 wherein said conductive layer is comprised of a material that is essentially chemically inert with respect to said electrical insulator material and said chemically sensitive material.

5. Apparatus as defined in claim 4 wherein said material of said conductive layer is selected from the group consisting of aluminum, gold, platinum, silver, tungsten, conductive polycrystalline silicon, and molybdenum.

6. Apparatus for measuring the concentration of chemical substances comprising:

a semiconductor substrate having a doping polarity;

a pair of spaced-apart diffusion regions located at the surface of said substrate material and having a doping polarity opposite that of said substrate material;

an electrical insulator material overlying at least a portion of said diffusion regions and the surface of the substrate material lying between the diffusion regions;

a conductive layer of material imbedded inside of said electrical insulator material so as to be completely surrounded thereby and positioned so as to be overlying, but not in electrical contact with, the surface area of said substrate material lying between said diffusion regions;

switch means for electrically connecting the conductive layer of material selectively to a voltage source or to a ground potential source; and

chemical sensing means positioned above the conductive layer of material for generating an electrochemical voltage which is a function of the concentration of certain chemical substances to which said chemical sensitive means is exposed.

7. Apparatus as defined in claim 6 wherein said conductive layer is comprised of an opaque material.

8. Apparatus as defined in claim 6 wherein said imbedded conductive layer is comprised of a material that is essentially chemically inert with respect to said electrical insulator material.

9. Apparatus as defined in claim 8 wherein said material of the conductive layer is selected from the group consisting of aluminum, gold, platinum, silver, tungsten, conductive polycrystalline silicon, and molybdenum.

10. Apparatus for measuring the concentration of chemical substances comprising:

a semiconductor substrate having a doping polarity;

a pair of spaced-apart diffusion regions located at the surface of said substrate material and connected along the surface by a connecting layer region, said regions having a doping polarity opposite that of said substrate material;

a conductive Schottky barrier gate layer overlying at least a portion of said connecting layer region;

a reference electrode coupled in circuit relationship with said diffusion regions through a reference potential source;

switch means for electrically connecting the Schottky barrier gate layer selectively to a voltage source or to a ground potential source; and

a layer of chemical sensitive material overlying said Schottky barrier gate layer, said chemical sensitive material being adapted to create an electrochemical voltage when exposed to selected chemical substance and to apply said electrochemical voltage at said Schottky barrier gate layer, said electrochemical voltage being referenced through said reference electrode to said diffusion regions.

11. Apparatus as in claim 10 wherein said Schottky barrier gate layer is a material selected from the group consisting of aluminum and platinum.

12. Apparatus as defined in claim 10 further including an electrical insulator material overlying said Schottky barrier gate layer.

13. Apparatus as defined in claim 12 wherein said chemical sensitive means comprises a layer of chemical sensitive material overlying that portion of said electrical insulator material that is above said Schottky barrier gate layer, said chemical sensitive material being adapted to create said electrochemical voltage when exposed to selected chemical substances and to apply a control voltage via an electric field created by said electrochemical voltage at said Schottky barrier gate layer, said voltages being referenced through said reference electrode to said diffusion regions.

14. A monolithic integrated circuit for measuring the concentration of chemical substances comprising:

a semiconductor substrate having a doping polarity;

a first pair of spaced-apart diffusion regions located at the surface of said substrate material and having a doping polarity opposite that of said substrate material;

a second pair of spaced-apart diffusion regions located at the surface of said substrate material and having a doping polarity opposite that of said substrate material;

a third pair of spaced-apart diffusion regions located at the surface of said substrate material and having a doping polarity opposite that of said substrate material;

means electrically connecting a first region of the second pair of diffusion regions to a first region of the third pair of diffusion regions;

electrical insulator material overlying at least a portion of said diffusion regions and the surface of the substrate material lying between said first, second and third pairs of diffusion regions;

a first conductive layer overlying that portion of said electrical insulator material that lies over the substrate surface area between said first pair of spaced-apart diffusion regions, said first conductive layer being in electrical contact with said connecting means;

a second conductive layer overlying that portion of said electrical insulator material that lies over the substrate surface area between said second pair of spaced-apart diffusion regions;

a third conductive layer overlying that portion of said electrical insulator material that lies over the substrate surface area between said third pair of spaced-apart diffusion regions;

a chemical sensitive element positioned above said first conductive layer, said chemically sensitive element being adapted to create an electrochemical potential when exposed to selected chemical substances; and

a reference electrode connected in circuit relationship with said first pair of spaced-apart diffusion regions through a potential source such that a potential is created and added to said electrochemical potential generated in said chemically sensitive element, thereby creating a composite electric field that is felt at said first conductive layer, said composite electric field thus serving to affect the conductivity between said first pair of diffusion regions.

15. A method of measuring the concentration of chemical substances using three field-effect transistors (FETs), each having source, drain, and gate terminals, and a first of which further has a chemically sensitive element overlying its gate region, said method comprising:

(a) connecting the three FETs in circuit relationship as follows;

(1) electrically connecting the gate of the first FET to the source terminal of a second FET and the drain terminal of a third FET,

(2) grounding the source terminals of the first and third FETs,

(3) connecting an external potential source between ground and the drain terminal of the second FET,

(4) connecting an external potential source between ground and the drain terminal of the first FET, and

(5) connecting a current measuring device in series with the first FET so as to measure the amount of current that flows between the source and drain terminals thereof;

(b) exposing said chemically sensitive element of said first FET to a substance in which the concentration of chemical substances is to be measured;

(c) placing a reference electrode in contact with said substance whose concentration of chemical substances is to be measured, said reference electrode being connected to an external potential source that is referenced to ground;

(d) biasing the gate terminals of said second and third FETs so that they both act as switches, with the third FET being biased ON and the second FET being biased OFF, thereby applying a ground potential through the third FET to the gate terminal of the first FET;

(e) maintaining said third FET in the ON condition and said second FET in the OFF condition until a measurement is to be made, thereby protecting said first FET from static electric charge during manufacture, routine handling, and when not in use;

(f) biasing the gate terminals of said second and third FETs so that the third FET is OFF and the second FET is ON whenever the electrical characteristics of the first FET are to be measured, said biasing causing whatever reference potential is present at the drain terminal of said second FET as applied in step (a) (3) above to be directed through the second FET to the gate terminal of the first FET, said fixed gate potential thereby preventing any variations in the gate potential of the first FET that might otherwise occur due to the creation of an electrochemical potential by the chemically sensitive layer;

(g) biasing the gate terminals of said second and third FETs so that both FETs are OFF when a measurement of the concentration of chemical substances is to be made, thereby isolating the gate terminal of said first FET from all external potentials and allowing said electrochemical potential generated by said chemically sensitive element, and referenced to said first FET through the reference electrode mentioned in step (e), to vary the gate potential of the first FET in proportion to the concentration of selected chemical substances to which said chemically sensitive element is exposed, said variation affecting the conductivity between the source and drain terminals of the first FET; and

(h) measuring the current that flows between the source and drain terminals of the first FET, said measure of current representing a measure of the concentration of chemical substances to which the first FET is exposed.

16. A method of measuring the concentration of chemical substances as defined in claim 15 wherein said first and second FETs are enhancement mode FETs and said third FET is a depletion mode FET.

17. A method of measuring the concentration of chemical substances as defined in claim 15 wherein said first, second, and third FETs are fabricated on the same semiconductor substrate, thereby forming a single monolithic integrated circuit that can be used for the measurement process.