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Plasma device comprising an intermediate electrode out of contact with a high frequency electrode to induce electrostatic attraction

  • US 4,399,016 A
  • Filed: 03/11/1982
  • Issued: 08/16/1983
  • Est. Priority Date: 03/12/1981
  • Status: Expired due to Term
First Claim
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1. In a plasma device for processing a sample by the use of plasma, comprising a chamber defining a hollow space therein, a first flat electrode member placed in said hollow space and having a first electrode surface, a second flat electrode member placed in said hollow space and having a second electrode surface directed towards said first electrode surface, support means having a first support surface to be brought into contact with said first electrode surface and a second support surface directed towards said second electrode surface for supporting said sample on said second support surface, a.c. voltage providing means for providing an a.c. voltage between said first and said second electrode members to produce said plasma between said first electrode member with said support means and said second electrode member, d.c. voltage producing means for producing a d.c. voltage to electrostatically couple said sample to said support means during production of said plasma and thereby to fixedly attach said sample to said second support surface, the improvement wherein:

  • said second means comprises;

    a first dielectric layer defining said first support surface;

    a conductor placed on said first dielectric layer out of contact with said first electrode surface and electrically connected to said d.c. voltage producing means, with said first electrode member electrically insulated fron said d.c. voltage producing means; and

    a second dielectric layer covered on said conductor and defining said second support surface to which said sample is to be attached.

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