Method for producing a surface relief pattern

• US 4,402,571 A
• Filed: 02/17/1981
• Issued: 09/06/1983
• Est. Priority Date: 02/17/1981
• Status: Expired due to Fees

• Current Assignee: Polaroid Corporation (PLR IP Holdings LLC)
• Original Assignee: Polaroid Corporation (PLR IP Holdings LLC)
• Inventors: Cowan, James J., Slafer, Warren D., Gerber, Arthur M.
• Primary Examiner(s): Corbin, John K.
• Assistant Examiner(s): Propp, William
• Application Number:
  US06/234,959
• Time in Patent Office: 931 Days
• Field of Search: 350/162.17, 350/3.61, 350/162.2
• US Class Current: 204/192.26
• CPC Class Codes: G02B 5/1857 using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
• CPC Class Codes: G03F 7/001 Phase modulating patterns, e.g. refractive index patterns
• CPC Class Codes: G03F 7/2006 using coherent light; using polarised light
• CPC Class Codes: G03F 7/70408 Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
• CPC Class Codes: Y10S 359/90 Methods

Abstract

Surface relief patterns of predetermined configuration are fabricated by a process which involves exposing a photosensitive material at a first position to a laser interference pattern, rotating said material about an axis perpendicular to its surface to a second position, exposing said material at said second position to a laser interference pattern, wherein at least one and preferably both of said exposures is individually below the effective threshold for linear response of said material, the points of intersection of the two fringe patterns being exposed above said threshold as a result of the combined exposures, and developing said material. The method provides a facile technique for the manufacture of surface relief patterns and is particularly useful when the pattern is of submicrometer size and difficult to manufacture by mechanical means.

Claims

1. A method of producing a surface relief pattern of predetermined configuration in a photosensitive material which comprises exposing said photosensitive material at a first position to a laser interference pattern, exposing said material at a second position to a laser interference pattern, said second position being a rotation of said photosensitive material or of said laser interference pattern about an axis perpendicular to said material'"'"'s surface from said first positions, wherein at least one of said exposures is below the effective threshold for linear response of said material, the points of intersection of the two patterns being exposed above said threshold as a result of the combined exposures, and developing said material.

2. The method of claim 1, wherein each of said exposures are individually below said threshold of said material.

3. The method of claim 2, wherein said material is developed by contacting said photosensitive material with an etchant and the time of contact therewith is regulated so as to achieve the desired predetermined configuration.

4. The method of claim 3 wherein said contact with etchant is effected so as to obtain small holes.

5. The method of claim 3 wherein said contact with an etchant is effected so as to obtain spires.

6. The method of claim 1, wherein said photosensitive material is rotated from said first position to said second position.

7. The method of claim 6 wherein said first and second positions are at substantially right angles to each other.

8. The method of claim 7 wherein said photosensitive material is given a substantially uniform overall exposure with light to which it is sensitive in an amount below said threshold for linear response of said material before said photosensitive material is exposed to said laser interference pattern in said first position whereby a sinusoidal relief profile is obtained after development.

9. The method of claim 7 wherein said photoresist is only exposed to said laser interference patterns whereby a substantially square wave relief profile is obtained after development.

10. The method of claim 9 wherein said exposure in said first position is longer than said exposure in said second position.

11. The method of claim 10 wherein said contact with an etchant is effected so as to obtain small holes interconnected by flat areas.

12. The method of claim 11 wherein said contact with an etchant is effected so as to obtain a relief pattern of flat topped pedestals.

13. The method of claim 7 wherein said exposures are effected so as to generate reflection waves during said exposures.

14. The method of claim 13 wherein said photosensitive material is carried on a light transmitting substrate and said exposures are made through said substrate.

15. The method of claim 1, wherein said photosensitive material is a positive photoresist.

16. The method of claim 1 wherein said photosensitive material is pre-baked prior to exposure in said first position.

17. The method of claim 1, 15, 3, 4, 11, 13 or 14, wherein each of said interference patterns has at least 1000 lines per millimeter.