High efficiency solar cell structure

• US 4,404,422 A
• Filed: 09/15/1981
• Issued: 09/13/1983
• Est. Priority Date: 09/26/1980
• Status: Expired due to Fees

• Current Assignee: Unisearch Limitedkensington
• Original Assignee: Unisearch Limited (University Of New South Wales)
• Inventors: Green, Martin A., Blakers, Andrew W.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/302,650
• Time in Patent Office: 728 Days
• Field of Search: 136/255, 136/258 AM, 357/30, 29/572, 427/74
• US Class Current: 136/255
• CPC Class Codes: H01L 31/06 characterised by potential barriers
• CPC Class Codes: H01L 31/062 the potential barriers being only of the metal-insulator-semiconductor type
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

The invention relates to a new-type of solar cell structure, and to a method of manufacturing same. The solar cell is designated as an MINP cell (Metal-Insulator-NP junction solar cell). Essentially, the MINP solar cell is an extremely shallow N-P junction cell with a MIS (Metal-Insulator-Semiconductor) type contact made to the top of the cell. Although combining features of the two technologies, no more processing steps are required than for a conventional P-N junction cell. The advantage of the MINP structure is its substantially improved efficiency.

Claims

1. A solar cell comprising a body of semiconductor material having top and bottom metal contact layers, said body having two regions of different conductivity type forming a junction therebetween, namely a lower region containing a dopant of one conductivity type in contact with the bottom metal contact layer and an upper region containing a dopant of opposite conductivity type, said upper region being separated from said top metal contact layer by a thin insulating layer, said top metal contact being configured to allow the passage of incident radiation.

2. A solar cell according to claim 1 wherein the lower region of said body is doped with a P-type impurity and said upper region is doped with a N-type impurity.

3. A solar cell according to claim 1 wherein the lower region of said body is doped with an N-type impurity and said upper region is doped with a P-type impurity.

4. A solar cell according to claim 1 wherein said top metal contact layer is comprised of a metal selected from the group consisting of Al, Ti, Mg, Hf, Zr, In, Y, Mn, Sc and Ca.

5. A solar cell according to claim 1 further comprising a top antireflection coating.

6. A method of manufacturing a solar cell comprising the steps of forming a layer of semiconductor material containing a dopant of one conductivity type on top of a layer of semiconductor material containing a dopant of opposite conductivity type to form a junction therebetween, depositing a bottom metal contact layer on one of said layers, forming a thin oxide layer on the other of said layers and depositing a top metal contact layer configured to allow the passage of incident radiation on said oxide layer.

7. A method according to claim 6 further comprising the addition of an antireflection coating to the top of said cell.

8. A solar cell prepared by a method according to claim 6.