Method of applying a resist pattern on a substrate, and resist material mixture

• US 4,405,708 A
• Filed: 03/08/1982
• Issued: 09/20/1983
• Est. Priority Date: 03/12/1981
• Status: Expired due to Fees

• Current Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Wijdenes, Jacob, van Pelt, Pieter
• Primary Examiner(s): Downey, Mary F.
• Application Number:
  US06/355,977
• Time in Patent Office: 561 Days
• Field of Search: 430/281, 430/296, 430/285, 430/326, 430/907, 430/905, 430/192, 430/175, 430/176, 430/197, 430/313
• US Class Current: 430/281.1
• CPC Class Codes: G03F 7/039 Macromolecular compounds which are photodegradable, e.g. positive electron resists G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023
• CPC Class Codes: G03F 7/095 having more than one photosensitive layer G03F7/075 takes precedence
• CPC Class Codes: Y10S 430/106 Binder containing
• CPC Class Codes: Y10S 430/108 Polyolefin or halogen containing

Abstract

A method of applying a resist pattern on a substrate and resist material mixture.

Resist materials which are applied in accordance with a specific resist pattern are employed in the production of integrated circuits. It has been found that the addition of a certain type of negative-working resist material, namely polystyrene and polystyrene derivatives, to positive-working resist materials results in a resist material mixture having an increased resistance to plasma etching.

Claims

1. A method of forming a resist pattern on a substrate wherein a resist material is uniformly applied to the surface of said substrate to form a photosensitive layer thereupon, the resultant layer of resist material is selectively irradiated with actinic radiation and the irradiated portion of said layer is then removed, characterized in that the resist material is a mixture of a positive-working methylmethacrylate polymer or polymethylisopropenyl ketone and 1-25% by weight of a negative-working styrene homopolymer of the formula:

##STR2## wherein R₁ is hydrogen or alkyl, R₂ is halogen, alkyl or alkoxy and n represents the degree of polymerization.

2. The method of claim 1, wherein the styrene homopolymer is poly(p-tert.butyl)styrene.

3. A resist material mixture comprising a positive-working methylmethacrylate polymer or polymethylisopropenyl and 1-25% by weight of a negative-working styrene homopolymer of the formula:

##STR3## wherein R₁ is hydrogen or alkyl, R₂ is halogen, alkyl or alkoxy and n represents the degree of polymerization.

4. A resist material mixture as claimed in claim 3, characterized in that the material comprises 1-25% by weight of poly(p-tert.butyl)styrene as the styrene homopolymer.