Method for manufacturing a semiconductor device

• US 4,406,051 A
• Filed: 09/08/1980
• Issued: 09/27/1983
• Est. Priority Date: 09/11/1979
• Status: Expired due to Term

• Current Assignee: Tokyo Shibaura Denki Kabushiki Kaisha (Toshiba Corporation)
• Original Assignee: Tokyo Shibaura Denki Kabushiki Kaisha (Toshiba Corporation)
• Inventors: Iizuka, Hisakazu
• Primary Examiner(s): Rutledge, L. Dewayne
• Assistant Examiner(s): Hey,David A.
• Application Number:
  US06/184,883
• Time in Patent Office: 1,114 Days
• Field of Search: 357/51, 357/59, 148/174, 148/1-5, 427/86, 29/571, 29/576 B
• US Class Current: 438/238
• CPC Class Codes: H01L 21/32155 Doping polycristalline - or amorphous silicon layers
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H10B 10/15 comprising a resistor load element

Abstract

A method for manufacturing a semiconductor device includes a step, after forming a polycrystalline silicon layer, of doping oxygen and/or nitrogen by ion implantation in a predetermined portion of the polycrystalline silicon layer and converting the predetermined portion into a resistive element. The polycrystalline silicon layer is formed to cover a contact hole which exposes a predetermined portion of a conductive region, that is, a doped or semiconductor region or a wiring layer formed in contact with a semiconductor body. Within this contact hole and within the region of the polycrystalline silicon layer which is in contact with the doped region or the wiring layer, the polycrystalline silicon layer is converted into the resistive element by ion implantation.

Claims

1. A method for manufacturing a semiconductor device comprising:

(a) forming a semiconductor region in a major surface of a semiconductor body;

(b) forming a first insulating film on the major surface of said semiconductor body;

(c) forming a contact hole in said first insulating film, exposing a part of said semiconductor region;

(d) covering said contact hole with a polycrystalline silicon layer having a portion in said contact hole which contacts said part of said semiconductor region and having a portion extending on said insulating film around said contact hole; and

(e) ion implantation of at least one element selected from the group consisting of oxygen and nitrogen in part of said polycrystalline silicon layer, said part including the portion in contact with said semiconductor region to convert said part into a resistive element.

2. The method as recited in claim 1, including, before said ion implantation, the step of forming a second insulating film on said first insulating film and on the peripheral portion of said polycrystalline layer, said second insulating film having a hole exposing said part of said polycrystalline silicon layer, and said peripheral portion of said polycrystalline silicon layer remaining as a non-ion implanted region after said ion implantation.

3. The method as recited in claim 2, comprising forming an electrode on said resistive element.

4. The method as recited in claim 2, further comprising removing said second insulating film after said ion implantation, and forming an electrode on said resistive element, said electrode contacting said non-ion implanted region.

5. The method as recited in claim 4, further comprising forming a second low resistivity polycrystalline silicon layer covering said resistive element and said non-ion implanted region, before the formation of said electrode.

6. The method as recited in claim 4, further comprising forming a second electrode which is connected to said semiconductor region and is isolated from said electrode and which is connected through said semiconductor region to said resistive element.

7. The method as recited in any one of claims 1 to 6, wherein an impurity is doped in said polycrystalline silicon layer at such a high concentration that said polycrystalline silicon layer has a sufficiently low electrical resistivity that it can function as a wiring layer.

8. The method as recited in claim 7, wherein said ions are implanted in an amount on the order of 10¹² -10¹⁸ /cm².

9. The method as recited in claim 7 wherein said ions are implanted in an amount on the order of 10¹⁴ -10¹⁸ /cm².

10. A method for manufacturing a semiconductor device comprising:

(a) forming a first low resistivity polycrystalline silicon layer as a wiring layer on a first insulating film formed on a semiconductor body;

(b) forming a second insulating film covering said wiring layer and said first insulating film;

(c) forming a contact hole in said second insulating film, exposing part of said wiring layer;

(d) covering said contact hole with a second low resistivity polycrystalline silicon layer having a portion in said contact hole which contacts said part of said wiring layer and having a portion extending on said second insulating film around said contact hole; and

(e) ion implantation of at least one element selected from the group consisting of oxygen and nitrogen in part of said polycrystalline silicon layer, said part including the portion in contact with said wiring layer to convert said part into a resistive element.

11. The method as recited in claim 10 wherein an impurity is doped in said second polycrystalline silicon layer at such a high concentration that said polycrystalline silicon layer has a sufficient low electrical resistivity that it can function as a wiring layer.

12. The method as recited in claim 10 or 11, wherein said ions are implanted in an amount in the order of 10¹² -10¹⁸ /cm².

13. The method as recited in claim 10 or 11, wherein said ions are implanted in an amount on the order of 10¹⁴ -10¹⁸ /cm².

14. A method for manufacturing a semiconductor device comprising:

(a) forming a source region and a drain region in a semiconductor substrate;

(b) forming a gate oxide film on said substrate between said source and drain regions;

(c) forming a gate layer of polycrystalline silicon on said gate oxide film;

(d) forming a first silicon oxide film covering said substrate surface and said gate layer;

(e) forming a contact hole in said first silicon oxide film, exposing part of said drain region;

(f) covering said contact hole with a low resistivity polycrystalline silicon layer having a portion in said contact hole which contacts said part of said drain region and having a portion extending on said first silicon oxide film around said contact hole;

(g) ion implanting at least one element selected from the group consisting of oxygen and nitrogen in part of said polycrystalline silicon layer, said part including the portion in contact with said drain region to convert said part into a resistive element; and

(h) forming electrode layers which are in contact with said source region, said gate layer and said resistive element.

15. The method as recited in claim 14, comprising before said ion implantation, the step of forming a second insulating film on said first insulating film and on the peripheral portion on of said low resistivity polycrystalline silicon layer, said second insulating film having a hole exposing said part of said low resistivity polycrystalline silicon layer, and said peripheral portion of said low resistivity polycrystalline silicon layer remaining as a non-ion implanted region after said ion implantation.

16. The method as recited in claim 15, wherein said second insulating film is removed after said ion implantation and the drain electrode is formed on said resistive element, said drain electrode contacting said non-ion implanted region.

17. The method as recited in claim 16, comprising forming a second low resistivity polycrystalline silicon layer covering said resistive element and said non-ion implanted region, before the formation of said drain electrode.

18. The method as recited in any one of claims 14-17, wherein an impurity is doped in said polycrystalline silicon layer at such a high concentration that said polycrystalline silicon layer has a sufficiently low electrical resistivity that it can function as a wiring layer.

19. The method as recited in claim 18, wherein said ions are implanted in an amount on the order 10¹² -10¹⁸ /cm².

20. The method as recited in claim 18 wherein said ions are implanted in an amount on the order of 10¹⁴ -10¹⁸ /cm².