Natural lithographic fabrication of microstructures over large areas

• US 4,407,695 A
• Filed: 03/29/1982
• Issued: 10/04/1983
• Est. Priority Date: 12/31/1981
• Status: Expired due to Fees

• Current Assignee: Exxon Research and Engineering Company (Exxon Mobil Corporation)
• Original Assignee: Exxon Research and Engineering Company (Exxon Mobil Corporation)
• Inventors: Deckman, Harry W., Dunsmuir, John H.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/363,019
• Time in Patent Office: 554 Days
• Field of Search: 427/43.1, 427/180, 427/183, 427/189, 427/195, 427/197, 427/198, 427/220, 427/221, 427/272, 427/282, 204/192 E, 430/5, 156/643, 156/646, 156/659.1, 156/661.1
• US Class Current: 216/42
• CPC Class Codes: B41M 5/24 Ablative recording, e.g. by burning marks; Spark recording marking by high energetic means, e.g. by laser otherwise than burning or ablative removal B41M5/26; materials or methods for recording or reproduction by optical means G11B7/00
• CPC Class Codes: G03F 7/004 Photosensitive materials G03F7/12, G03F7/14 take precedence
• CPC Class Codes: G03F 7/165 Monolayers, e.g. Langmuir-Blodgett
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials

Abstract

Large area random and mosaic arrays of identical submicron microcolumnar structures can be produced on surfaces by directionally ion etching a monolayer film of spherical colloidal particles.

Claims

1. A method producing a lithographic mask on the surface of a substrate comprising coating said substrate with a monolayer of colloidal particles substantially over the entire surface such that said particles are fixed to said substrate in a predetermined way as to particle size distribution and mean distance between particles, said monolayer of colloidal particles serving as an etch mask for forming an etched pattern in said substrate.

2. The method of producing a lithographic mask of claim 1 for forming an etched pattern in said substrate further comprising the step of etching a pattern in said substrate.

3. The method of producing a lithographic mask for forming an etched pattern in said substrate of claim 2 wherein said etching step is performed with a reactive plasma.

4. The method of producing a lithographic mask for forming an etched pattern in said substrate of claim 3 wherein said etching step is performed with an ion beam.

5. The method of producing a lithographic mask for forming an etched pattern in said substrate of claim 3 wherein said etching step is performed by chemical means.

11. The method of producing a lithographic mask of claim 1 for deposition on said substrate further comprising the step of depositing a metal onto said substrate so as to fill the space between said colloidal particles fixed to said substrate.

12. The method of producing a lithographic mask for deposition on said substrate of claim 11 wherein said depositing step is performed by condensing a metal vapor onto said substrate.

13. The method of claim 11 wherein said colloidal particles fixed to said substrate are ordered.

14. The method of claim 12 wherein said colloidal particles fixed to said substrate are ordered.

15. The method of producing a lithographic mask of claim 1 wherein said colloid particles are polymer particles.

16. The method of claim 15 wherein said polymer particles are spherical.

17. The method of claim 16 wherein said particles are monodispersed spherical polymer particles.

6. A method of producing an ordered lithographic mask on the surface of a substrate comprising:

(a) depositing a dispersion of colloidal particles of predetermined size onto said substrate such that a monolayer of colloidal particles are fixed to said substrate; and

(b) dispelling any excess of said monolayer of said colloidal particles from said substrate such that said monolayer is ordered, said monolayer of colloidal particles serving as an etch mask for forming an etched pattern in said substrate.

7. The method of producing a lithographic mask which is ordered of claim 6 further comprising the step of etching a pattern in said substrate.

8. The method of producing a lithographic mask which is ordered of claim 7 wherein said etching step is performed with a reactive plasma.

9. The method of producing a lithographic mask which is ordered of claim 7 wherein said etching step is performed with an ion beam.

10. The method of producing a lithographic mask which is ordered of claim 7 wherein said etching step is performed by chemical means.

18. The method of producing a lithographic mask which is ordered of claim 6 wherein the rotating step begins within 10 to 20 sec. of said depositing step.

19. The method of claim 6 wherein said dispelling step is performed by rotating said substrate.

20. The method of claim 19 wherein the rotating step is performed as a rotation speed such that a void free single layer is produced.

21. The method of producing a lithographic mask which is ordered of claim 19 wherein the rotating step is performed at a rotation speed greater than 2000 revolutions per minute.

22. A method for producing a spectrally selective absorbing surface comprising:

coating said substrate with a monolayer of colloidal particle substantially over the entire surface such that said particles are fixed to said substrate in a predetermined way as to particle size distribution and mean distance between particles;

etching a pattern in said substrate of microcolumnar posts.

23. The method of claim 22 wherein the microcolumnar posts have an aspect ratio of greater than 1.

24. The method of claim 22 wherein the microcolumnar posts have an aspect ratio of greater than 10.

25. The method of claim 22 wherein the microcolumnar posts have an aspect ratio of greater than 20.

26. The method of claim 22 wherein the microcolumnar posts are spaced apart a distance about the wavelength of visible light.

27. The method of claim 22 wherein the microcolumnar posts are spaced apart a distance about ten times the wavelength of visible light.