Optical measurements of fine line parameters in integrated circuit processes

• US 4,408,884 A
• Filed: 06/29/1981
• Issued: 10/11/1983
• Est. Priority Date: 06/29/1981
• Status: Expired due to Term

• Current Assignee: Intersil Corporation (Renesas Electronics Corporation)
• Original Assignee: RCA Corporation (General Electric Company)
• Inventors: Meier, Heinrich, Kleinknecht, Hans P., Ham, William E.
• Primary Examiner(s): McGraw, Vincent P.
• Assistant Examiner(s): Koren, Matthew W.
• Application Number:
  US06/278,448
• Time in Patent Office: 834 Days
• Field of Search: 356/354, 356/355, 356/356, 356/237, 29/524
• US Class Current: 356/496
• CPC Class Codes: G01B 11/02 for measuring length, width or thickness G01B11/08 takes precedence
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Abstract

The image transfer process in integrated circuit (IC) processes such as large scale integrated (LSI) device process manufacturing is monitored by optical measurements on a stage-by-stage basis by measuring a monitor specimen or test sample formed with a diffraction grating of a predetermined pattern having a strip width corresponding to the desired line widths of the wafers or masks being monitored. A beam of monochromatic light is scanned over the test sample to generate diffracted beams of various orders. Line width, line depth, line edge profile process errors can be determined by various combinations of the diffracted beams of the zero, first, second, etc., orders. The test sample is scanned to generate a display for data representing the diffracted beams. The parameter data can be stored for later use for quality control, process monitoring, circuit design parameters, and the like. Moreover, gross process errors are visually discernible on the monitor specimen.

Claims

1. In a method for optically measuring the line parameters including line width dimensions, line edge profile or line thicknesses of a diffraction pattern of material disposed on a test sample, said diffraction pattern comprised of a planar array of spaced strips of material having a strip width a and periodicity d, including the steps for exposing and diffraction pattern to a beam of monochromatic light to diffract said beam into diffracted beams of various orders, and for detecting and measuring the intensity of at least two of the diffracted beams to obtain at least two intensity signals, wherein the improvement comprises the steps of:

scanning said light beam over the grating pattern of the test sample,

the beam having a diameter substantially greater than the width of the grating strips, and

generating continuously information signals representing the diffracted order beams as the beam is scanned over the diffraction pattern, deviations of said information signals from a predetermined reference being a measure of the change in line parameters comprising essentially the lateral dimensions of the lines, the thickness of the lines, and the profile of the edge of the lines of the diffraction pattern.

2. The method of claim 1, wherein said light beam has a diameter of one millimeter, the grating width a is 2 micrometers, and the periodicity is 8 micrometers.

3. The method of claim 2, wherein said light beam has a wavelength of 623 nanometers.

4. The method of claim 1, wherein the scanning step comprises the steps of:

supporting said substrate on a carriage movable in both x and y directions, and

directing said beam of light in a fixed direction onto the diffraction pattern to generate said diffracted beams of light.

5. The method of claim 4 for displaying said information signals on an x-y chart recorder, wherein the x and y direction of movement of said test sample is followed on the chart recorder.

6. The method of claim 4 for printing data corresponding to said line parameters further comprising the steps of:

converting the information signals to digital format,

computing the ratios of said diffraction order signals,

storing into memory the information representing the calculated ratios corresponding to each one of a series of processing steps made on said test sample, and

comparing the information in said memory to determine the changes in line parameters of said test sample.

7. The method of claim 4 for displaying said information signals on a display of a CRT, wherein the x and y direction of movement of said test sample is followed on the CRT display.

8. The method of claim 1, wherein the diffracted beams are of the first and second order, and further comprising the step of determining line width deviations by comparing the information data signals in the form of a series of scanned lines to a reference dimension.

9. The method of claim 1, wherein the diffracted beams include at least three sets of higher order beams other than the zero order and further includes the step of comparing said three sets of diffracted beams to determine the edge profile of the diffraction grating strips.

10. The method of claim 1, wherein the diffracted beams include at least two sets of diffraction beams including the zero order and the first or second order and further comprising the step of comparing said two sets to determine the grating strip depth.

11. The method of claim 1, wherein said scanning step comprises scanning the pattern with a polarized beam of light, the direction of polarization being parallel to the plane of incidence of the light beam, the angle of incidence being such that the tangent of the angle of incidence is equal to the refractive index of the material of the grating lines, and the lines of the grating being in the plane of incidence of the light beam.

12. A method for optically monitoring the image transfer process for an LSI device by:

scanning a test sample comprising a specimen monitor substrate or mask having a large area diffraction pattern thereof with a monochromatic light beam having a diameter that is substantially smaller than the size of said grating pattern,

measuring while scanning with said light beam the physical parameter of width, depth and edge profile of the diffraction grating by comparing one or more pairs of a plurality of pairs of diffracted beams of various orders,

repeat processing of said test sample in progressive stages of the image transfer process, and

repeat said scanning and measuring steps to determine deviations of said parameters from the previous stage.

13. In an apparatus for optically measuring the line parameters including line width dimensions, line edge profile or layer thicknesses of a diffraction pattern of material disposed on a test sample, said diffraction pattern comprised of a planar array of spaced strips of material having a strip width a and periodicity d, said apparatus including means for exposing said diffraction pattern to a beam of monochromatic light to diffract said beam into diffracted beams of various orders, detector means including detectors for measuring the intensity of at least two of the diffracted beams to obtain at least two intensity signals, wherein the improvement comprises:

means for scanning said light beam over the grating pattern of the test sample,

the beam having a diameter substantially greater than the width of the grating strips, and

means for generating continuously information signals representing the diffracted order beams as the beam is scanned over the diffraction pattern, deviations of said information signals from a predetermined reference being a measure of the change in line parameters comprising essentially the lateral dimensions of the lines, the thickness of the lines, and the profile of the edge of the lines of the diffraction pattern.

14. The apparatus of claim 13, wherein said light beam has a diameter of one millimeter, the grating width a is 2 micrometers, and the periodicity d is 8 micrometers.

15. The apparatus of claim 14, wherein said light beam has a wavelength of 623 nanometers.

16. The apparatus of claim 13, wherein the scanning means comprises:

means for supporting said test sample on a carriage movable in both x and y directions, and

directing said beam of light in a fixed direction onto the diffraction pattern to generate said diffracted beams of light.

17. The apparatus of claim 13, wherein the diffracted beams are of the first and second order, and further comprising means for determining line width deviations by comparing the information data signals in the form of a series of scanned lines to a reference dimension.

18. The apparatus of claim 13, wherein the diffracted beams include at least three sets of higher order beams other than the zero order and further includes means for comparing said three sets of diffracted beams to determine the edge profile of the diffraction grating strips.

19. The apparatus of claim 13, wherein the diffracted beams include at least two sets of diffraction beams including the zero order and the first or second order and further comprising means for comparing said two sets to determine the grating strip depth.

20. The apparatus of claim 13, wherein said scanning means includes means for polarizing said light beam of monochromatic light, such that the direction of polarization is parallel to the plane of incidence of the beam, the angle of incidence being such that the tangent of the angle is equal to the refractive index of the material of the grating lines and the lines of the grating being in the incidence plane.

21. A method for optically monitoring the image transfer process for an LSI device by:

preparing by a given process a product wafer or mask with selected patterns extending over a selected area thereon, and

preparing by said given process a test sample comprising a specimen monitor mask or wafer having a diffraction pattern extending over an area thereon substantially equal to the pattern area of said product wafer or mask,

gross defects in the diffraction pattern of said specimen monitor mask or wafer being visually discernible and being indicative thereby of similar defects at corresponding area portions on said product wafer or mask.