Polymeric insulation layer etching process and composition

• US 4,411,735 A
• Filed: 05/06/1982
• Issued: 10/25/1983
• Est. Priority Date: 05/06/1982
• Status: Expired due to Term

• Current Assignee: Covario, Inc. (Dentsu Group, Inc.)
• Original Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Inventors: Belani, Jagdish G.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/375,575
• Time in Patent Office: 537 Days
• Field of Search: 427/88, 427/89, 427/90, 427/91, 427/307, 252/79.1, 252/79.5, 252/156, 156/630, 156/633, 156/644, 156/655, 156/659.1, 156/668, 430/313, 430/317, 430/323, 430/329
• US Class Current: 438/701
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/31133 by chemical means
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C
• CPC Class Codes: Y10S 438/978 forming tapered edges on substrate or adjacent layers

Abstract

In a process for fabricating semiconductor devices having a patterned polyimide (PI) or polyimide-iso-indroquinazalinedione (PIQ) insulating layer on the device, a layer of uncured PI or PIQ resin is applied on a surface of the device. The resin layer is heated to produce a first level of partial curing in the resin layer. A photoresist is applied to the partially cured resin layer where it is to be removed. The partially cured resin layer is etched to produce the patterned layer. The patterned layer is then heated to produce a second level of partial cure, sufficient to prevent organic photoresist strippers from attacking the patterned layer. The developed photoresist is then stripped with an organic photoresist stripper, and the patterned layer heated a third time a sufficient extent to complete the curing of the PI and PIQ resin. The process desirably uses etching compositions comprising an amine etchant having the formula R--CH₂ --CH₂ --NH₂, where R is an alkyl group having from 1 to 4 carbon atoms or an aryl group having from 6 to 12 carbon atoms, or an etchant comprising a mixture of quaternary ammonium hydroxide and an N-alkyl-pyrrolidinone. In both cases, water may be used as a solvent for the etching compositions.

Claims

1. A process for fabricating a semiconductor device having a patterned polyimide or polyimide-iso-indroquinazolinedione insulating layer on said device, comprising applying a layer of uncured polyimide or polyimide-iso-indroquinazolinedione resin on a surface of said device, heating said resin layer to produce a first level of partial curing in said resin layer, applying a photoresist layer to said partially cured resin layer, developing said photoresist layer to uncover said partially cured resin layer where it is to be removed, etching said partially cured resin layer to produce said patterned layer, heating said patterned layer to produce a second level of partial curing which is sufficient to prevent organic photoresist strippers from attacking the patterned layer, stripping the developed photoresist with an organic photoresist stripper, and heating said patterned layer a sufficient extent to complete the curing of said polyimide or polyimide-iso-indroquinazolinedione resin.

2. The process of claim 1 in which said heating to produce the first level of partial curing in said resin layer is at a temperature of from about 120°

to about 150°

C., for a time sufficient to remove solvent from said resin.

3. The process of claim 2 in which said heating to produce the second level of curing in said patterned layer is carried out at a temperature of about 180°

C. to about 220°

C.

4. The process of claim 3 in which the curing of said patterned layer is completed at a temperature of at least about 300°

C.

5. The process of claim 1 in which said photoresist layer is a negative photoresist.

6. A process for fabricating a semi-conductor device having a patterned polyimide or polyimide-iso-indroquinazoline-dione insulating layer on a surface of said device, comprising applying a layer of uncured polyimide or polyimide-iso-indroquinazolindione insulating resin on a surface of said device, heating said resin layer to produce partial curing in said resin layer, applying a layer of photoresist to said partially cured resin layer, developing said photoresist layer to uncover said partially cured resin layer, etching said partially cured resin layer with an amine etchant having the formula R--CH2--CH2--NH2, wherein R is an alkyl group having from 1 to 4 carbon atoms or an aryl group having from 6 to 12 carbon atoms, the amine etchant being provided in substantially equimolar solution with water, or an etchant comprising a mixture of a quaternary ammonium hydroxide and an N-alkyl pyrrolidinone, the quaternary ammonium hydroxide and N-alkyl pyrrolidinone etchant being provided as substantially equal parts by volume of a solution containing from about 1 to about 10 weight percent quaternary ammonium hydroxide in water and the N-alkyl pyrrolidinone.

7. The process of claim 6 in which R is a methyl group.

8. The process of claim 6 in which R is a phenyl group.

9. The process of claim 8 in which said etching is followed by rinsing in a lower alkyl bisalkoxyalkane or alkanol.

10. The process of claim 6 in which the quaternary ammonium hydroxide is tetramethylammonium hydroxide.

11. The process of claim 10 in which the N-alkyl pyrrolidinone is N-methyl pyrrolidinone.

17. The process of claim 6 additionally comprising the steps of heating the partially cured resin layer after the etching step to produce a second level of partial curing in said resin layer which is sufficient to prevent organic photoresist strippers from attacking the patterned layer, stripping the developed photoresist layer with an organic photoresist stripper, and heating said patterned layer a sufficient extent to complete the curing of said polyimide or polyimide-iso-indroquinazolinedione resin.

12. An etchant solution for etching patterns in a polyimide or polyimide-iso-indroquniazolinedione insulating layer on a semiconductor device, which comprises a solution of substantially equal parts by volume of about 1.0 to about 10 weight percent of a quaternary ammonium hydroxide in water and about 40 to 60 weight percent of an N-alkyl pyrrolidinone.

13. The etchant solution of claim 12 in which said N-alkyl pyrrolidinone is N-methyl pyrrolidinone.

14. The etchant solution of claim 13 in which said quaternary ammonium hydroxide is tetramethylammonium hydroxide.

15. An etchant solution for etching patterns in a polyimide or polyimide-iso-indroquinazolinedione insulating layer on a semiconductor device, which comprises substantially equimolar proportions of an amine having the formula R--CH₂ --CH₂ --NH₂, wherein R is an alkyl group having from 1 to 4 carbon atoms or an aryl group having from 6 to 12 carbon atoms, and water.

16. The etchant solution of claim 15 in which R is a methyl or a phenyl group.