Semiconductor memory device test apparatus

• US 4,414,665 A
• Filed: 11/14/1980
• Issued: 11/08/1983
• Est. Priority Date: 11/21/1979
• Status: Expired due to Term

• Current Assignee: Nippon Telegraph and Telephone Corporation
• Original Assignee: Nippon Telegraph and Telephone Corporation, Takeda Riken Kogyo Kabushikikaisha
• Inventors: Kimura, Kenji, Sugamori, Shigeru, Narumi, Naoaki, Ishikawa, Kohji
• Primary Examiner(s): Nusbaum, Mark E.
• Assistant Examiner(s): Harkcom, Gary V.
• Application Number:
  US06/206,902
• Time in Patent Office: 1,089 Days
• Field of Search: 364/200 MS File, 364/900 MS File, 371/21, 371/20, 371/25, 371/27, 371/71, 371/24, 340/146.2, 324/73 R, 324/73 AT, 365/201
• US Class Current: 714/719
• CPC Class Codes: G11C 29/56 External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor

Abstract

A memory device under test is accessed by an address generated by a pattern generator to write therein data and to read the data out to be compared with expected data, and the comparison result is stored in the fault-address memory by the same address after reading out therefrom the content of the address. When a disagreement is detected through the comparison, it is counted; however, the count operation is inhibited if the data read out from the fault-address memory is a fault data. When the counted number exceeds a predetermined value, a fault signal is generated. After the test is terminated, an address counter is operated, the fault-address memory is read out by the content of the address counter, and when fault data is detected from the output read out, the content of the address counter is fetched into the CPU.

Claims

1. An apparatus for testing a memory device, comprising

a pattern generator for generating and supplying test patterns to the memory device, including address patterns for accessing the addresses of the memory device,

expected value pattern generating means for providing expected data which is expected to correspond to data stored in each respective address of the memory device, in correspondence with the generation of addresses of said address patterns,

a comparison circuit for reading out the memory device, for comparing the respective data read out from the memory device and the respective expected data, and for outputting a disagreement signal when the read-out data and the expected data do not agree as defect data of the respective address of the memory device, in correspondence with the generation of addresses of said address patterns,

a fault-address memory comprising means for being accessed to read out the content of the respective address thereof, and for subsequently writing any respective defect data that is outputted from said comparison circuit into the same corresponding address, in correspondence with said generation of addresses of said address patterns,

a counter for counting the number of said defect data outputted from said comparison circuit,

means for inhibiting said counting of said counter when said output from said fault-address memory is a previously stored defect data corresponding to the same respective address of said memory device, and

fault signal generating means for generating a fault signal to stop said generation of test patterns when the number counted by said counter exceeds a predetermined value.

2. The apparatus of claim 1,

said counter comprising an up-counter and means for outputting an overflow signal upon reaching a predetermined count limit, and

said apparatus comprising means for setting, for each test of said memory device, the complement of said predetermined count limit into said counter.

3. The apparatus of claim 1 or 2 comprising

each said data read out from said memory device and each said expected data comprising a plurality of bits for each said address of said address patterns, and each said address of said memory device comrising at least the same said plurality of bits,

said comparison circuit comprising means for comparing the respective bits of said data read out from said memory device with said expected data, and for outputting said disagreement signal with corresponding defect data bits,

said fault-address memory storing said defect data at respective bits of the corresponding address,

said counter comprising individual counting means for each said bit of the addresses of said address patterns, and

said fault signal generating means comprising means for generating said fault signal when the number counted by any one of said individual counting means exceeds said predetermined value.

4. The apparatus of claim 1, or 2 comprising selection means for selectively outputting each said disagreement signal output from said comparison circuit and said fault signal, to supply the selected one as the signal to stop said generation of test patterns.

8. The apparatus of claim 1, 2, 5, 6, wherein said expected value pattern generating means is contained in said pattern generator and comprises means for generating said expected data by means of a logic operation.

9. The apparatus of claim 1, 2, 5, or 6, wherein

said expected value pattern generating means is a memory, and

said control system comrises means for providing said expected data to respective addresses of said memory at the beginning of each said test, to be read out in synchronism with said generation of addresses of said address patterns.

10. The apparatus of claim 1, comprising

a control section for selectively accessing said fault-address memory,

an address counter for selectively generating addresses for accessing said fault-address memory for selective fetching of said defect data from the respective addresses of said fault-address memory,

defect data detecting means for detecting each said defect data read out from said fault-address memory during said selective fetching,

address counter control means for, in response to an access command, incrementing said address counter in one direction, and for stopping the incrementing of said address counter in response to the detection of each said defect data by said defect data detecting means during said selective fetching, and

a control section for generating said access command, for determining that said address counter has stopped incrementing, and for fetching the content of said address counter corresponding to each said defect data of said selective fetching.

11. The apparatus of claim 10, wherein said counter counts each time one of said defect data is output from said fault-address memory during the selective fetching, and

wherein said control section fetches the count content of said counter as the respective number of the defective addresses of the memory device.

12. The apparatus of claim 1, 2, 5, 6, 10 or 11, said test patterns generated by said test pattern generator including write data patterns which are written into the respective addresses of the memory device in correspondence with said generation of addresses of said address patterns.

13. The apparatus of claim 3, said test patterns generated by said test pattern generator including write data patterns which are written into the respective addresses of the memory device in correspondence with said generation of addresses of said address patterns, each said write data comprising the same said plurality of bits.

14. The apparatus of claim 8, said test patterns generated by said test pattern generator including write data patterns which are written into the respective addresses of the memory device in correspondence with said generation of addresses of said address patterns.

5. An apparatus for testing a memory device, comprising

a pattern generator for generating and supplying test patterns to the memory device, including address patterns for accessing the memory device,

expected value pattern generating means for generating expected data corresponding to the data that is expected to be stored at the respective address in said memory device, in correspondence with the generation of said address patterns,

a comparison circuit for comparing the data read out from said memory device with said expected data, for detecting each disagreement therebetween and for outputting a respective disagreement signal as defect data corresponding to a fault at the respective address of said memory device, in correspondence with said generation of addresses of said address patterns,

a fault-address memory for storing said defect data output from said comparison circuit at the addresses corresponding to the defective addresses of said memory device, in correspondence with said generation of address of said address patterns,

an address counter for generating addresses for reading out said fault-address memory,

defect data detecting means for detecting each one of said defect data that is read out from said fault-address memory,

address counter control means for advancing said address counter in one direction in response to an access command, and for stopping the advancement of said address counter in response to the detection of each said defect data by said fault data detecting means, and

a control section for selectively accessing said fault-address memory by generating said access command for said address counter control means, for determining that said address counter control means has stopped as a result of detecting one of said defect data, and for fetching therein the content of said address counter corresponding to each said stopping of the address counter.

6. The apparatus of claim 5, wherein said control section comprises means for fetching therein the respective output of said fault-address memory when fetching each said address from said address counter control means.

7. The apparatus of claim 5, or 6, wherein said control section comprises means for monitoring whether said address counter is incrementing for performing said selective accessing, and for fetching the defect data corresponding to the address in said address counter when said address counter has stopped incrementing.