End-point detection in plasma etching or phosphosilicate glass
First Claim
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1. A method for detecting end-point in the plasma etching of a phosphorous doped silicon dioxide layer coated on a substrate of single crystal silicon comprising the steps of;
- etching the phosphorous doped silicon dioxide from the substrate within an etching chamber with gas from the fluorinated hydrocarbon family,spectroscopically observing the gases in the etching chamber over a time interval covering the beginning and end of the etching process and within a predetermined wavelength interval,observing the presence of the phosphorous atomic line straddled by two argon atomic lines at the beginning of the etching process,observing the disappearance of said phosphorous atomic line from between said two argon atomic lines as an indication of the end of the etching process.
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Abstract
A method for determining the completion of removal by plasma etching of phosphorus doped silicon dioxide from an underlying substrate.
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Citations
3 Claims
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1. A method for detecting end-point in the plasma etching of a phosphorous doped silicon dioxide layer coated on a substrate of single crystal silicon comprising the steps of;
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etching the phosphorous doped silicon dioxide from the substrate within an etching chamber with gas from the fluorinated hydrocarbon family, spectroscopically observing the gases in the etching chamber over a time interval covering the beginning and end of the etching process and within a predetermined wavelength interval, observing the presence of the phosphorous atomic line straddled by two argon atomic lines at the beginning of the etching process, observing the disappearance of said phosphorous atomic line from between said two argon atomic lines as an indication of the end of the etching process. - View Dependent Claims (2, 3)
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Specification
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Current AssigneeLam Research Corporation
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Original AssigneeThe Perkin-Elmer Corporation (Thermo Fisher Scientific Incorporated)
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InventorsGelernt, Barry, Wang, C. Wallace
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Primary Examiner(s)Powell, William A.
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Assistant Examiner(s)Bokan, Thomas
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Application NumberUS06/250,375Time in Patent Office957 DaysField of Search156/626, 156/643, 156/646, 156/654, 156/655, 156/656, 156/657, 156/659.1, 156/662, 204/192 E, 204/298, 250/372, 250/373, 250/492.2, 356/316, 356/72US Class Current438/16CPC Class CodesG01N 21/67 using electric arcs or disc...H01J 37/32935 Monitoring and controlling ...
