Photoelectrochemical cells for conversion of solar energy to electricity

• US 4,416,959 A
• Filed: 10/19/1981
• Issued: 11/22/1983
• Est. Priority Date: 11/18/1980
• Status: Expired due to Fees

• Current Assignee: Skotheim, Terje
• Original Assignee: Skotheim, Terje
• Inventors: Skotheim, Terje
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/312,888
• Time in Patent Office: 764 Days
• Field of Search: 429/111
• US Class Current: 429/111
• CPC Class Codes: H01G 9/20 Light-sensitive devices
• CPC Class Codes: H01M 14/005 Photoelectrochemical storage cells light sensitive devices H01G9/20, semiconductors sensitive to light H01L31/00

Abstract

A double photoelectrochemical cell for converting solar energy directly to electricity. The device in one embodiment has two semiconductors which are separated from each other by a dry solid polymer electrolyte. The two semiconductors have a different band gap; for example, one is n-type CdS and the other is p-type CdTe. The polymer electrolyte, for example, is a thin film polyethylene oxide acting as a polymer matrix containing a polysulfide redox couple, for example, Na₂ S₄. The polymer electrolyte is transparent, insulating and capable of transporting ions. At least one of the semiconductors is semi-transparent. The short wavelengths of light are absorbed by the semi-transparent wide band gap semiconductor, and the long wavelengths pass therethrough, and through the polymer film electrolyte, and are absorbed by the narrow band gap semiconductor. The output of the cell is double; one from each semiconductor, i.e., they are series-connected. Output voltage, for example, is about 0.625 volts. The theoretical efficiencies in the example are about 35%, compared with about 25% for a standard photovoltaic cell having a single junction. Also included is a method of manufacturing such a cell.

Claims

1. A tandem photovoltaic device comprising a sandwich structure of at least three semiconductor layers each separated from one another by an intermediate layer of thin film dry solid polymer electrolyte, and electrodes connected to the outer faces of the outer semiconductor layers, one of said outer semiconductor layers adapted to receive incident light on its said outer face, said last mentioned semiconductor having a higher band gap than the adjacent semiconductor.

2. A device according to claim 1, wherein an adjacent pair of semiconductors separated by a layer of said intermediate electrolyte are of the same conductivity type but different work function, one of said pair forming a rectifying barrier at one of said semiconductor-intermediate electrolyte interfaces, the other of said pair forming an ohmic junction at the other of said semiconductor-intermediate electrolyte interfaces.

3. A device according to claim 1, wherein two adjacent semiconductors separated by a layer of said intermediate electrolyte are of the same conductivity type, either both n or both p type but of different work function;

wherein the p semiconductor having the larger work function makes a rectifying barrier with said intermediate layer of electrolyte, and the other of said two p semiconductors having the smaller work function makes an ohmic contact with said electrolye;

or alternatively, wherein the n semiconductor having the smaller electron affinity makes a rectifying junction with said intermediate electrolyte, and the other of said two n semiconductors having the larger electron affinity makes an ohmic contact with said intermediate electrolyte.

5. A device according to claim 1 or 4, further comprising a thin transparent conductive film between one semiconductor and the adjacent solid polymer electrolyte, said thin film having a work function sufficient to produce a rectifying barrier with said semiconductor.

13. A device according to claim 1 or 10, wherein said polymer electrolyte has an insulating matrix and with transport of electric charges being provided by ions dissolved in said polymer matrix.

14. A device accordig to claim 1 or 10, wherein said polymer electrolyte has an insulating matrix, with electroactive groups attached to said matrix and with transport of electric charges being provided by electrons hopping between said electroactive groups.

4. A photoelectric device for converting incident electromagnetic radiation to electricity comprising a plurality of unit cells each having a transparent counter electrode, a thin film dry solid polymer electrolyte adjacent thereto, a semiconductor adjacent to said electrolyte and having a higher resistivity than said electrolyte at at least the interface;

said units being positioned adjacent to one another, and separated by a transparent conductive layer, with the radiation passing successively through the units; and

the band gap of the semiconductors to first receive the incident radiation being greater than the band gap of the adjacent semiconductor to next receive the radiation.

6. A photoelectric device comprising, a transparent counter electrode, a thin film dry solid polymer electrolyte adjacent thereto, a semiconductor adjacent to said polymer electrolyte film, said semiconductor having a surface layer of higher resistivity than the electrolyte and an underlying body adjacent said surface layer and of lower resistivity than said layer.

7. A device according to claim 6 wherein the surface layer is 0.1 to 3 micrometers thick.

8. A device according to claim 6, wherein said counter electrode is selected from the group consisting of Au, Pt, Pd, Co;

indium-tin-oxide, tin-oxide, CrAlMg, or a conductive oxide from the group consisting of indium-tin-oxide and tin-oxide coated with 5-100 Å

of Pt, Au, Pd, or Co.

9. A photoelectric device comprising:

a transparent counter electrode;

a thin dry film solid polymer electrolyte adjacent thereto;

a thin transparent highly conductive film adjacent said polymer;

a semiconductor adjacent said highly conductive film;

said thin transparent conductive film having a work function sufficient to produce a rectifying barrier with said semiconductor.

10. A device according to claim 9, wherein said thin transparent conductive film is a metallic layer selected from the group consisting of gold, silver, and platinum and has a thickness of 5 angstroms to 150 angstroms.

11. A device according to claim 9, wherein said thin transparent conductive film is a highly conductive polymer.

12. A device according to claim 11, wherein said conductive thin film is a polymer selected from the group comprising:

polyphenylene-oxide doped with ferrocene or I^- ;

polypyrrole doped with BF^-₄ or ClO^-₄, or I^-, or Br^- or Cl^- ;

poly (2,5-Thieneylene);

poly (p-phenylene);

(SN)_x ;

the thickness of said polymer layer being 100-1000 Å

.