Method for making Schottky barrier diodes with engineered heights

• US 4,421,577 A
• Filed: 11/10/1980
• Issued: 12/20/1983
• Est. Priority Date: 11/10/1980
• Status: Expired due to Term

• Current Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford Management Co.)
• Original Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford Management Co.)
• Inventors: Spicer, William E.
• Primary Examiner(s): Smith, John D.
• Application Number:
  US06/205,452
• Time in Patent Office: 1,135 Days
• Field of Search: 427/84, 427/88, 148/187, 148/1.5
• US Class Current: 438/507
• CPC Class Codes: H01L 21/28575 on semiconductor bodies comprising AIIIBV compounds
• CPC Class Codes: H01L 21/28581 Deposition of Schottky electrodes
• CPC Class Codes: Y10S 148/084 Ion implantation of compound devices

Abstract

Schottky barrier diodes with engineered barrier heights in III-V semiconductor material are disclosed. By fabricating the diodes using a very clean and defect free surface, the barrier height can be controlled by introducing selected amounts of dopant in the surface prior to evaporation of a contact metal. By selecting a dopant having the same conductivity as the semiconductor material a reliable ohmic contact can be provided.

Claims

1. A method of fabricating a semiconductor device including group III elements and group V elements of the periodic table and having a metal contact thereon comprising the steps of:

(1) forming a semiconductor body including a first dopant of a first conductivity type and having a clean surface with minimal defects,

(2) introducing a second dopant into said surface,

(3) exposing said surface to an atmosphere including the group V element of the semiconductor body, and

(4) providing a metal contact on said surface.

2. The method as defined in claim 1 wherein said metal contact includes a Group III element.

3. The method of fabricating a III-V semiconductor Schottky diode comprising the steps of:

(1) providing a III-V semiconductor body including a dopant of a first conductivity type and having a clean surface with minimal defects,

(2) introducing a second dopant of opposite conductivity type into said surface,

(3) exposing said surface to an atmosphere including the group V element of the III-V semiconductor body, and

(4) providing a metal contact on said surface.

4. The method as defined by claim 3 wherein said metal contact includes a Group III element.

5. The method of fabricating an ohmic contact on a III-V semiconductor device comprising the steps of

(1) providing a III-V semiconductor body including a dopant of a first conductivity type and having a clean surface with minimal defects,

(2) introducing a second dopant of the same conductivity type into said surface,

exposing said surface to an atmosphere including the group V element of said III-V semiconductor body, and

providing a metal contact on said surface.

6. The method as defined by claim 5 wherein said metal contact includes a Group III element.