Optically toggled bidirectional switch

• US 4,424,544 A
• Filed: 02/09/1982
• Issued: 01/03/1984
• Est. Priority Date: 02/09/1982
• Status: Expired due to Term

• Current Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Original Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Inventors: Chang, Gee-Kung, Lorimor, Orval G., Hartman, Adrian R., El Hamamsy, Mahmoud A.
• Primary Examiner(s): EISENZOPF, REINHARD
• Application Number:
  US06/347,299
• Time in Patent Office: 693 Days
• Field of Search: 361/56, 361/91, 361/100, 361/101, 361/111, 361/13, 361/2, 307/200 B, 307/100
• US Class Current: 361/56
• CPC Class Codes: H03K 17/08142 in field-effect transistor switches
• CPC Class Codes: H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
• CPC Class Codes: H03K 17/785 controlling field-effect transistor switches

Abstract

An optically toggled bidirectional normally-on switch is provided with protection against bilateral voltage and bidirectional current surges by the inclusion of a pair of oppositely poled thyristors. One version uses a large junction-type field-effect transistor in its main path and a pair of smaller junction-type transistors in the subsidiary path. A photodiode array controls the gate voltage on each of the transistors and turns them off when illuminated. A control node in the subsidiary path is connected to the gates of the SCRs so that excess current in this path turns on the appropriately-poled thyristor to provide an additional shunt path for the current.

Claims

1. A normally-on switch comprising a pair of terminals,

semiconductive circuit means connected between said terminals including a pair of serially connected normally-on field-effect transistors forming a current path between said terminals, the point between said two transistors forming a control node for providing controllable conduction between said terminals and including photovoltaic means for switching the state of conduction, and

protective circuit means connected between said terminals for protecting the semiconductive circuit means against current or voltage surges including at least one thyristor connected essentially in parallel between said terminals, the gate of each being effectively connected to said control node.

2. A switch in accordance with claim 1 in which the protective circuit means comprises a pair of oppositely poled thyristors.

3. A switch in accordance with claim 2 in which each gate of the thyristor is connected to the control node by way of the conduction path of a separate normally-on field-effect transistor, the gate electrodes of which are connected to the gate electrodes of the earlier-mentioned transistors.

4. A switch in accordance with claim 3 in which the photovoltaic means includes photodiode means connected between the control node and the gates of the five transistors and of the thyristors.

5. A switch in accordance with claim 1 in which the semiconductive circuit means further includes a single normally-on field-effect transistor connected to form a conduction path in parallel with that of the serially connected pair, the gate electrodes of the three transistors being connected together.

6. A switch in accordance with claim 5 in which the photovoltaic means includes a photodiode means connected between the control node and the gates of the three transistors for controlling the conduction state of the three transistors.

7. A switch in accordance with claim 5 in which each of the transistors is a junction field-effect transistor.

8. A switch in accordance with claim 5 in which each transistor is a depletion-type MOS transistor.

9. A switch in accordance with claim 1 in which each of the transistors is a junction field-effect transistor.

10. A switch in accordance with claim 1 in which each transistor is a depletion-type MOS transistor.

11. A switch in accordance with claim 1 in which the gates of the thyristors are connected to the control node by way of the conduction path of a field-effect transistor.

12. A switch in accordance with claim 1 in which the gates of the thyristors are each connected to the control node by way of a separate diode means.

13. A switch in accordance with claim 1 in which the thyristors are in parallel between the pair of terminals and the gates of the thyristors are each connected to the control node by way of a separate diode means.

14. A normally-on switch in accordance with claim 1 in which each thyristor is connected in series with a diode between said terminals, the cathode of the thyristor being connected to the anode of the diode, and the gate of each thyristor is connected directly to the control node.

15. A normally-on switch in accordance with claim 9 in which the control node is connected to each terminal by a separate branch path, each branch path including blocking diode means.

16. A normally-on switch in accordance with claim 15 in which the gates of the thyristors are connected to the control node by way of a field-effect transistor.

17. A normally-on switch in accordance with claim 15 in which the gates of the thyristors are connected to the control node by way of diode means.

18. A normally-on switch in accordance with claim 15 in which each thyristor is connected in series with a diode between said terminals, the cathode of the thyristor being connected to the anode of the diode, and the gate of each thyristor is connected directly to the control node.

19. A normally-on switch comprising

a pair of terminals,

semiconductive circuit means including a pair of field-effect transistors connected serially between said terminals for providing controllable conduction between said terminals and including photovoltaic means for switching the state of conduction, the voltage at the node between said transistors providing a measure of the conduction,

branch circuit means between said node and each terminal including blocking diode means,

and protection circuit means across said terminals including at least one thyristor having its gate effectively connected to said node.

20. A normally-on switch in accordance with claim 19 in which the photovoltaic means is connected between the node and the gates of the field-effect transistors.

21. A normally-on switch in accordance with claim 20 in which the semiconductive circuit means includes an additional field-effect transistor in parallel between said terminals and its gate is connected to the gates of the pair of transistors.